PRTR5V0U2D
Ultra low capacitance double rail-to-rail ESD protection
Rev. 01 — 28 April 2009
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection device in
a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
The device is designed to protect two Hi-Speed data lines or high-frequency signal lines
from the damage caused by ESD and other transients.
PRTR5V0U2D integrates two ultra low capacitance rail-to-rail ESD protection channels
and one additional ESD protection diode to ensure signal line protection even if no supply
voltage is available.
1.2 Features
I
I
I
I
I
I
I
I
ESD protection of two Hi-Speed data lines or high-frequency signal lines
Ultra low input/output to ground capacitance: C
(I/O-GND)
= 1 pF
ESD protection up to 8 kV
IEC 61000-4-2, level 4 (ESD)
Very low clamping voltage due to an integrated additional ESD protection diode
Very low reverse current
AEC-Q101 qualified (85
°C)
Small SMD plastic package
1.3 Applications
I
I
I
I
I
I
I
I
USB 2.0 interfaces
Digital Video Interface (DVI)
High Definition Multimedia Interface (HDMI)
Mobile and cordless phones
Personal Digital Assistants (PDA)
Digital cameras
Wide Area Network (WAN) / Local Area Network (LAN) systems
PCs, notebooks, printers and other PC peripherals
NXP Semiconductors
PRTR5V0U2D
Ultra low capacitance double rail-to-rail ESD protection
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per channel
C
(I/O-GND)
C
(I/O-I/O)
Zener diode
V
RWM
C
sup
[1]
[2]
[3]
Parameter
input/output to ground
capacitance
input/output to input/output
capacitance
reverse standoff voltage
supply pin to ground
capacitance
Conditions
f = 1 MHz;
V
(I/O-GND)
= 0 V
f = 1 MHz;
V
(I/O-I/O)
= 0 V
[1]
Min
-
-
Typ
1.0
0.6
Max
1.5
-
Unit
pF
pF
[2]
[3]
-
-
-
16
5.5
-
V
pF
f = 1 MHz;
V
CC
= 0 V
[3]
Measured from pin 1, 3, 4 or 6 to ground.
Measured from pin 1 or 6 to pin 3 or 4.
Measured from pin 5 to ground.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
input/output 1
ground
input/output 2
input/output 2
supply voltage
input/output 1
3
006aab349
Symbol
I/O1
GND
I/O2
I/O2
V
CC
I/O1
Simplified outline
6
5
4
Graphic symbol
1
6
1
2
3
2
5
4
3. Ordering information
Table 3.
Ordering information
Package
Name
PRTR5V0U2D SC-74
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
Type number
4. Marking
Table 4.
Marking codes
Marking code
ZB
Type number
PRTR5V0U2D
PRTR5V0U2D_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 28 April 2009
2 of 12
NXP Semiconductors
PRTR5V0U2D
Ultra low capacitance double rail-to-rail ESD protection
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
T
amb
T
stg
ambient temperature
storage temperature
−40
−55
+85
+125
°C
°C
Parameter
Conditions
Min
Max
Unit
Table 6.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
ESD
Parameter
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1, 3, 4 or 6 to pin 2 or 5.
[1][2]
Min
-
-
Max
8
10
Unit
kV
kV
Per channel
[2]
PRTR5V0U2D_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 28 April 2009
3 of 12
NXP Semiconductors
PRTR5V0U2D
Ultra low capacitance double rail-to-rail ESD protection
ESD standards compliance
Conditions
> 8 kV (contact)
> 4 kV
Table 7.
Standard
Per channel
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
001aaa631
I
PP
100 %
90 %
10 %
t
r
=
0.7 ns to 1 ns
30 ns
60 ns
t
Fig 1.
ESD pulse waveform according to IEC 61000-4-2
PRTR5V0U2D_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 28 April 2009
4 of 12
NXP Semiconductors
PRTR5V0U2D
Ultra low capacitance double rail-to-rail ESD protection
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per channel
I
R
C
(I/O-GND)
C
(I/O-I/O)
V
F
Zener diode
V
RWM
V
BR
C
sup
[1]
[2]
[3]
[4]
Parameter
reverse current
input/output to ground
capacitance
input/output to input/output
capacitance
forward voltage
reverse standoff voltage
breakdown voltage
supply pin to ground
capacitance
Conditions
V
R
= 5 V
f = 1 MHz;
V
(I/O-GND)
= 0 V
f = 1 MHz;
V
(I/O-I/O)
= 0 V
I
F
= 1 mA
[1]
[1]
Min
-
-
-
-
-
6
-
Typ
<1
1.0
0.6
0.7
-
-
16
Max
100
1.5
-
-
5.5
9
-
Unit
nA
pF
pF
V
V
V
pF
[2]
[3]
[4]
[4]
f = 1 MHz;
V
CC
= 0 V
[4]
Measured from pin 1, 3, 4 or 6 to ground.
Measured from pin 1 or 6 to pin 3 or 4.
Measured from pin 1, 3, 4 or 6 to pin 5.
Measured from pin 5 to ground.
2.0
C
(I/O-GND)
(pF)
1.6
006aaa483
1.0
C
(I/O-I/O)
(pF)
0.8
006aaa484
1.2
0.6
0.8
0.4
0.4
0.2
0
0
1
2
3
5
V
(I/O-GND)
(V)
4
0
0
1
2
3
4
5
V
(I/O-I/O)
(V)
f = 1 MHz; T
amb
= 25
°C
f = 1 MHz; T
amb
= 25
°C
Fig 2.
Input/output to ground capacitance as a
function of input/output to ground voltage;
typical values
Fig 3.
Input/output to ground capacitance as a
function of input/output to input/output
voltage; typical values
PRTR5V0U2D_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 28 April 2009
5 of 12
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