PZTA42
NPN Silicon High-Voltage Transistors
•
High breakdown voltage
•
Low collector-emitter saturation voltage
•
Complementary type: PZTA92 (PNP)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
4
2
1
3
Type
PZTA42
Maximum Ratings
Parameter
Marking
PZTA42 1=B
Pin Configuration
2=C
3=E
4=C
-
-
Package
SOT223
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
300
300
6
500
100
1.5
150
-65 ... 150
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation-
T
S
≤
124 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
1
Pb-containing
mA
W
°C
Symbol
R
thJS
Value
≤
17
Unit
K/W
package may be available upon special request
2
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-04-26
PZTA42
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
Unit
max.
-
-
-
µA
V
typ.
-
-
-
300
300
6
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0
Emitter-base breakdown voltage
I
E
= 100 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 200 V,
I
E
= 0
V
CB
= 200 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
I
EBO
h
FE
-
-
-
0.1
20
100
nA
-
Emitter-base cutoff current
V
EB
= 5 V,
I
C
= 0
-
DC current gain
1)
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 30 mA,
V
CE
= 10 V
25
40
40
V
CEsat
V
BEsat
-
-
-
-
-
-
-
-
0.5
0.9
V
Collector-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
-
-
Base emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
AC Characteristics
Transition frequency
I
C
= 20 MHz,
V
CE
= 10 V,
f
= 20 MHz
Collector-base capacitance
V
CB
= 20 V,
f
= 1 MHz
1
Pulse
f
T
C
cb
-
-
70
-
-
3
MHz
pF
test: t < 300µs; D < 2%
2
2007-04-26
PZTA42
DC current gain
h
FE
=
ƒ
(I
C
)
V
CE
= 10 V
10
3
h
FE
5
PZTA 42/43
EHP00724
Collector current
I
C
=
ƒ
(V
BE
)
V
CE
= 10V
10
3
mA
PZTA 42/43
EHP00726
Ι
C
10
2
10
2
5
5
10
1
2
10
1
5
5
10
0
5
10
0
-1
10
5 10
0
5 10
1
5 10 mA 10
Ι
C
2
3
10
-1
0
0.5
1.0
V
BE
V
1.5
Collector cutoff current
I
CBO
=
ƒ
(T
A
)
V
CB
= 200 V
10
4
nA
PZTA 42/43
EHP00725
Transition frequency
f
T
=
ƒ
(I
C
)
V
CE
= 10 V
10
3
MHz
PZTA 42/43
EHP00723
Ι
CBO
10
3
5
10
2
5
10
1
5
10
0
5
10
-1
typ
max
f
T
10
2
5
0
50
100
T
A
˚C 150
10
1
10
0
5
10
1
5
10
2
mA 5
10
3
Ι
C
3
2007-04-26
PZTA42
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
Emitter-base capacitance
C
eb
=
ƒ
(V
EB
)
90
pF
Total power dissipation
P
tot
=
ƒ
(T
S
)
1.8
W
C
CB
(C
EB
)
70
60
50
0.9
40
CEB
30
20
P
tot
CCB
1.2
0.6
0.3
10
0
0
0
0
4
8
12
16
V
22
15
30
45
60
75
90 105 120
V
CB
(V
EB
)
°C
150
T
S
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
10
3
P
tot max
5
P
tot DC
PZTA 42/43
EHP00320
t
p
D
=
T
t
p
T
10
2
5
10
1
5
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
4
2007-04-26
Package SOT223
PZTA42
Package Outline
A
6.5
±0.2
3
±0.1
4
1.6
±0.1
0.1 MAX.
15˚ MAX.
B
3.5
±0.2
1
2
3
7
±0.3
0.7
±0.1
4.6
0.25
M
A
2.3
0.5 MIN.
0.28
±0.04
0...10˚
Foot Print
0.25
M
B
3.5
1.4
1.2 1.1
Marking Layout (Example)
Manufacturer
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
1.4
4.8
8
0.3 MAX.
7.55
12
Pin 1
6.8
1.75
5
2007-04-26
嵌入式系统
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