Freescale Semiconductor
Technical Data
Document Number: MRF9030
Rev. 8, 9/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
NOT RECOMMENDED FOR NEW DESIGN
•
Typical Two - Tone Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 19 dB
Efficiency — 41.5%
IMD — - 32.5 dBc
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
Features
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
•
•
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
945 MHz, 30 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 360B - 05, STYLE 1
NI - 360
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
- 0.5, +68
- 0.5, + 15
92
0.53
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Value
1.9
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF9030LR1
1
RF Device Data
Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large - signal, common - source amplifier applications in 26 volt
base station equipment.
MRF9030LR1
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
NOT RECOMMENDED FOR NEW DESIGN
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 250 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 0.7 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
Input Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
—
—
—
2.9
3.8
0.19
3
4
—
0.4
—
Vdc
Vdc
Vdc
S
C
iss
C
oss
C
rss
—
—
—
49.5
26.5
1
—
—
—
pF
pF
pF
(continued)
MRF9030LR1
2
RF Device Data
Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
G
ps
18
19
—
dB
Symbol
Min
Typ
Max
Unit
NOT RECOMMENDED FOR NEW DESIGN
Two - Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Two - Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Power Output, 1 dB Compression Point
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 250 mA,
f1 = 945.0 MHz)
Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 250 mA,
f1 = 945.0 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 250 mA,
f1 = 945.0 MHz)
η
37
41.5
—
%
IMD
—
- 32.5
- 28
dBc
IRL
—
- 15.5
-9
dB
G
ps
—
19
—
dB
η
—
41.5
—
%
IMD
—
- 33
—
dBc
IRL
—
- 14
—
dB
P
1dB
—
30
—
W
G
ps
—
19
—
dB
η
—
60
—
%
MRF9030LR1
RF Device Data
Freescale Semiconductor
3
NOT RECOMMENDED FOR NEW DESIGN
V
GG
+
C7
B1
B2
V
DD
+
C8
C14
C15
+
C16
+
C17
NOT RECOMMENDED FOR NEW DESIGN
L1
RF
INPUT
C5
C9
L2
RF
OUTPUT
Z1
C1
Z2
Z3
Z4
Z5
Z6
Z7
DUT
Z8
Z9
Z10
Z11
Z12
C13
Z13
C2
C3
C4
C6
C10
C11
C12
B1
B2
C1, C8, C13, C14
C2, C4
C3
C5, C6
C7, C15, C16
C9, C10
C11
C12
C17
L1, L2
Z1
Z2
Short Ferrite Bead
Long Ferrite Bead
47 pF Chip Capacitors
0.8 pF to 8.0 pF Trim Capacitors
3.9 pF Chip Capacitor
7.5 pF Chip Capacitors
10
μF,
35 V Tantalum Capacitors
10 pF Chip Capacitors
9.1 pF Chip Capacitor
0.6 pF to 4.5 pF Trim Capacitor
220
μF,
50 V Electrolytic Capacitor
12.5 nH Surface Mount Inductors
0.260″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.500″ x 0.100″ Microstrip
0.215″ x 0.270″ Microstrip
0.315″ x 0.270″ Microstrip
0.160″ x 0.270″ x 0.520″, Taper
0.285″ x 0.520″ Microstrip
0.450″ x 0.270″ Microstrip
0.140″ x 0.270″ Microstrip
0.250″ x 0.060″ Microstrip
0.720″ x 0.060″ Microstrip
0.490″ x 0.060″ Microstrip
0.290″ x 0.060″ Microstrip
Taconic RF - 35 - 0300, 30 mil,
ε
r
= 3.55
Figure 1. 945 MHz Broadband Test Circuit Schematic
C7
V
DD
V
GG
C8
C9
L1
RF INPUT
C1
C2
C3
C5
C4 C6
C14
L2
C15 C16
C17
C13
CUT OUT AREA
C10
C11
C12
RF OUTPUT
MRF9030
900 MHz
Rev−02
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 945 MHz Broadband Test Circuit Component Layout
MRF9030LR1
4
RF Device Data
Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
TYPICAL CHARACTERISTICS
G
ps
η
V
DD
= 26 Vdc
P
out
= 30 W (PEP)
I
DQ
= 250 mA
Two−Tone, 100 kHz Tone Spacing
η
, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
20
19
G ps , POWER GAIN (dB)
18
17
16
15
14
13
12
930
IMD
IRL
50
45
40
35
−30
−32
−34
−36
−38
960
NOT RECOMMENDED FOR NEW DESIGN
−10
−12
−14
−16
−18
935
940
945
950
955
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
20
19.5
G ps , POWER GAIN (dB)
19
18.5
18
17.5
17
1
10
P
out
, OUTPUT POWER (WATTS) PEP
V
DD
= 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
100
I
DQ
= 375 mA
−20
V
DD
= 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
300 mA
250 mA
200 mA
−30
I
DQ
= 200 mA
−40
300 mA
−50
375 mA
−60
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
250 mA
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
22
60
V
DD
= 26 Vdc
I
DQ
= 250 mA
f = 945 MHz
50
40
30
η
20
10
0
1
10
100
P
out
, OUTPUT POWER (WATTS) AVG.
η
, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
0
−10
−20
−30
−40
−50
5th Order
−60
−70
1
7th Order
10
P
out
, OUTPUT POWER (WATTS) PEP
100
3rd Order
V
DD
= 26 Vdc
I
DQ
= 250 mA
f1 = 945 MHz, f2 = 945.1 MHz
G ps , POWER GAIN (dB)
20
18
16
14
12
10
0.1
G
ps
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain and Efficiency versus
Output Power
MRF9030LR1
RF Device Data
Freescale Semiconductor
5
NOT RECOMMENDED FOR NEW DESIGN
IMD, INTERMODULATION DISTORTION (dBc)
IRL, INPUT RETURN LOSS (dB)
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