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Freescale Semiconductor

Technical Data

Document Number: MRF9080

Rev. 8, 10/2008

N - Channel Enhancement - Mode Lateral MOSFET

Designed for GSM 900 MHz frequency band, the high gain and broadband

performance of this device make it ideal for large - signal, common - source

amplifier applications in 26 volt base station equipment.

•

Typical Performance for GSM Frequencies, 960 MHz, 26 Volts

Output Power @ P1db: 75 Watts

Power Gain @ P1db: 18.5 dB

Efficiency @ P1db: 55%

•

Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW

Output Power

Features

•

Internally Matched for Ease of Use

•

High Gain, High Efficiency and High Linearity

•

Integrated ESD Protection

•

Designed for Maximum Gain and Insertion Phase Flatness

•

Excellent Thermal Stability

•

Characterized with Series Equivalent Large - Signal Impedance Parameters

•

Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40μ″ Nominal.

•

RoHS Compliant

•

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MRF9080LR3

920 - 960 MHz, 75 W, 26 V

LATERAL N - CHANNEL

RF POWER MOSFET

CASE 465 - 06, STYLE 1

NI - 780

Table 1. Maximum Ratings

Rating

Symbol

V

DSS

V

GS

P

D

T

stg

T

C

T

J

Value

- 0.5, +65

- 0.5, +15

250

1.43

- 65 to +150

150

200

Unit

Vdc

W

W/°C

°C

Drain - Source Voltage

Gate - Source Voltage

Total Device Dissipation @ T

C

=

25°C

Derate above 25°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Symbol

R

θJC

Value

0.7

Unit

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Human Body Model

Machine Model

Class

1 (Minimum)

M1 (Minimum)

©

MRF9080LR3

1

RF Device Data

Freescale Semiconductor

LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09

RF Power Field Effect Transistor

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Table 4. Electrical Characteristics

(T

C

= 25°C unless otherwise noted)

Characteristic

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(V

DS

= 65 Vdc, V

GS

= 0)

Zero Gate Voltage Drain Leakage Current

(V

DS

= 26 Vds, V

GS

= 0)

Gate - Source Leakage Current

(V

GS

= 5 Vdc, V

DS

= 0 )

On Characteristics

Gate Threshold Voltage

(V

DS

= 10 Vdc, I

D

= 300

μAdc)

Gate Quiescent Voltage

(V

DS

= 26 Vdc, I

D

= 700 mAdc)

V

GS(th)

V

GS(Q)

V

DS(on)

g

fs

2.0

—

3.7

0.19

8.0

4.0

—

0.4

—

Vdc

S

I

DSS

I

DSS

I

GSS

—

10

1

μAdc

Symbol

Min

Typ

Max

Unit

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Drain - Source On - Voltage

(V

GS

= 10 Vdc, I

D

= 2 Adc)

Forward Transconductance

(V

DS

= 10 Vdc, I

D

= 6 Adc)

Output Capacitance

(V

DS

= 26 Vdc, V

GS

= 0, f = 1 MHz)

Reverse Transfer Capacitance

(V

DS

= 26 Vdc, V

GS

= 0, f = 1 MHz)

Power Output, 1 dB Compression Point

(V

DD

= 26 Vdc, I

DQ

= 600 mA, f = 960 MHz)

Common - Source Amplifier Power Gain @ 70 W (Min)

(V

DD

= 26 Vdc, I

DQ

= 600 mA, f = 960 MHz)

Drain Efficiency @ P

out

= 70 W

(V

DD

= 26 Vdc, I

DQ

= 600 mA, f = 960 MHz)

Drain Efficiency @ P1dB

(V

DD

= 26 Vdc, I

DQ

= 600 mA, f = 960 MHz)

Input Return Loss

(V

DD

= 26 Vdc, P

out

= 70 W, I

DQ

= 600 mA, f = 960 MHz)

Dynamic Characteristics

(1)

C

oss

C

rss

—

73

2.9

—

pF

Functional Tests

(In Freescale Test Fixture, 50 ohm system)

P

1dB

G

ps

η1

η2

IRL

68

17

47

—

9.5

75

18.5

52

55

12.5

—

20

—

W

dB

%

dB

1. Part is internally input matched.

MRF9080LR3

2

RF Device Data

Freescale Semiconductor

LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09

V

GG

R3

+

C7

R2

C6

R1

C18

+

C17

V

DD

C5

C11 C12 C13

DUT

C15

C14

C8

C9

C10

C16

C1

RF

INPUT

C2

C3

RF

OUTPUT

C4

LIFETIME BUY

Figure 1. Broadband GSM 900 Test Circuit Schematic

Table 5. Broadband GSM 900 Test Circuit Component Designations and Values

Part

C1

C2

C3

C4, C5, C9, C10, C12, C13

C6, C16, C17

C7, C18

C8, C11

C14

C15

R1, R2, R3

Raw PCB Material

Description

4.7 pF Chip Capacitor

2.7 pF Chip Capacitor

1.5 pF Chip Capacitor

5.6 pF Chip Capacitors

22 pF Chip Capacitors

10

μF,

35 V Tantalum Chip Capacitors

10 pF Chip Capacitors

0.8 pF Chip Capacitor

8.2 pF Chip Capacitor

1.0 kΩ, 1/8 W Chip Resistors

30 mil Glass Teflon

®

,

ε

r

= 2.55

Part Number

ATC100B4R7BT500XT

ATC100B2R7BT500XT

ATC100B1R5BT500XT

ATC100B5R6CT500XT

ATC100B220GT500XT

T491D106M035AT

ATC100B100JT500XT

ATC100B0R8BT500XT

ATC100B8R2GT500XT

CRCW08051001FKEA

TLX8 - 0300

Manufacturer

ATC

Kemet

ATC

Vishay

Taconic

MRF9080LR3

RF Device Data

Freescale Semiconductor

3

LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09

C7

C18

R3

R2

C6

V

GG

V

DD

C17

RF INPUT

C1

C2

C3

R1 C5

WB1

C4

C11 C12 C13

WB2

RF OUTPUT

C15

C16

C14

C8 C9 C10

MRF9080

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor

signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have

no impact on form, fit or function of the current product.

Figure 2. Broadband GSM 900 Test Circuit Component Layout

MRF9080LR3

4

RF Device Data

Freescale Semiconductor

LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09

LIFETIME BUY

CUT OUT AREA

V

GG

+

C6

U1

R1

C5

R2

V

DD

+

C9

R3

P1

R4

T1

+

C4

C3

C15

R5

R6

C7

DUT

C10

C13

C14

RF

OUTPUT

RF

INPUT

C1

C2

C8

C11

C12

Figure 3. Broadband GSM 900 Optimized Demo Board Schematic

Table 6. Broadband GSM 900 Optimized Demo Board Component Designations and Values

Part

C1

C2

C3, C15

C4, C6

C5

C7, C8

C9

C10, C11

C12, C13

C14

P1

R1

R2, R5, R6

R3

R4

T1

U1

Description

4.7 pF Chip Capacitor, ACCU - P

3.9 pF Chip Capacitor, ACCU - P

22 pF Chip Capacitors, ACCU - P

22

mF,

35 V Tantalum Chip Capacitors

1

mF

Chip Capacitor, ACCU - P

5.6 pF Chip Capacitors, ACCU - P

220

mF,

63 V Electrolytic Capacitor

3.3 pF Chip Capacitors, ACCU - P

2.2 pF Chip Capacitors, ACCU - P

4.7 pF Chip Capacitor

5.0 kΩ Potentiometer CMS Cermet Multi - turn

10

Ω,

1/8 W Chip Resistor

1 kΩ, 1/8 W Chip Resistor

1.2 kΩ, 1/8 W Chip Resistor

2.2 kΩ, 1/8 W Chip Resistor

Bipolar NPN Transistor, SOT - 23

Voltage Regulator, Micro - 8

Substrate = Taconic RF35, Thickness 0.5 mm

Part Number

08051J4R7CBS

08051J3R9CBS

08051J221CBS

T491X226K035AS

08053105

08051J5R6CBS

2222 - 136 - 68221

08051J3R3CBS

08051J2R2CBS

ATC100B4R7JT500XT

3224W

CRCW080510R0FKEA

CRCW08051001FKEA

CRCW08051201FKEA

CRCW08052201FKEA

BC847ALT1G

LP2951ACDMR2G

Manufacturer

AVX

Kemet

AVX

Vishay

AVX

ATC

Bourns

Vishay

ON Semiconductor

MRF9080LR3

RF Device Data

Freescale Semiconductor

5

LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09

LIFETIME BUY

MRF9080LR3_08

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