Power Field-Effect Transistor, 60ohm, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA
| 参数名称 | 属性值 |
| 包装说明 | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknow |
| 外壳连接 | GATE |
| 配置 | SINGLE |
| 最大漏源导通电阻 | 60 Ω |
| FET 技术 | JUNCTION |
| 最大反馈电容 (Crss) | 3.5 pF |
| JEDEC-95代码 | TO-206AA |
| JESD-30 代码 | O-MBCY-W3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | DEPLETION MODE |
| 最高工作温度 | 200 °C |
| 封装主体材料 | METAL |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | TIN LEAD |
| 端子形式 | WIRE |
| 端子位置 | BOTTOM |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 最大关闭时间（toff） | 80 ns |
| 最大开启时间（吨） | 16 ns |
| Base Number Matches | 1 |
| 2N4858A-2 | 2N4856A-2 | 2N4856A-1 | 2N4857A-2 | 2N4857A-1 | 2N4858A-1 | |
|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 60ohm, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA | Power Field-Effect Transistor, 25ohm, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA | Power Field-Effect Transistor, 25ohm, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA | Power Field-Effect Transistor, 40ohm, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA | Power Field-Effect Transistor, 40ohm, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA | Power Field-Effect Transistor, 60ohm, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA |
| 包装说明 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow |
| 外壳连接 | GATE | GATE | GATE | GATE | GATE | GATE |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最大漏源导通电阻 | 60 Ω | 25 Ω | 25 Ω | 40 Ω | 40 Ω | 60 Ω |
| FET 技术 | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION |
| 最大反馈电容 (Crss) | 3.5 pF | 4 pF | 4 pF | 3.5 pF | 3.5 pF | 3.5 pF |
| JEDEC-95代码 | TO-206AA | TO-206AA | TO-206AA | TO-206AA | TO-206AA | TO-206AA |
| JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| 最高工作温度 | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C |
| 封装主体材料 | METAL | METAL | METAL | METAL | METAL | METAL |
| 封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| 封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO | NO |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| 端子形式 | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 最大关闭时间（toff） | 80 ns | 20 ns | 20 ns | 40 ns | 40 ns | 80 ns |
| 最大开启时间（吨） | 16 ns | 8 ns | 8 ns | 10 ns | 10 ns | 16 ns |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
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