6-PIN DIP ZERO-CROSS
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)
MOC3031M
DESCRIPTION
The MOC303XM and MOC304XM devices consist of a AlGaAs
infrared emitting diode optically coupled to a monolithic silicon
detector performing the function of a zero voltage crossing bilat-
eral triac driver.
They are designed for use with a triac in the interface of logic
systems to equipment powered from 115 VAC lines, such as
teletypewriters, CRTs, solid-state relays, industrial controls,
printers, motors, solenoids and consumer appliances, etc.
6
6
1
1
MOC3032M
MOC3033M
MOC3041M
MOC3042M
MOC3043M
FEATURES
•
•
•
•
Simplifies logic control of 115 VAC power
Zero voltage crossing
dv/dt of 2000 V/µs typical, 1000 V/µs guaranteed
VDE recognized (File # 94766)
-ordering option V (e.g., MOC3043VM)
6
SCHEMATIC
1
ANODE 1
6 MAIN TERM.
CATHODE 2
5 NC*
ZERO
CROSSING
CIRCUIT
APPLICATIONS
•
•
•
•
Solenoid/valve controls
Static power switches
Temperature controls
AC motor starters
•
•
•
•
Lighting controls
AC motor drives
E.M. contactors
Solid state relays
N/C 3
4 MAIN TERM.
*DO NOT CONNECT
(TRIAC SUBSTRATE)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameters
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Junction Temperature Range
Isolation Surge Voltage
(1)
(peak AC voltage, 60Hz, 1 sec duration)
Total Device Power Dissipation @ 25°C
Derate above 25°C
EMITTER
Continuous Forward Current
Reverse Voltage
Total Power Dissipation 25°C Ambient
Derate above 25°C
DETECTOR
Off-State Output Terminal Voltage
Peak Repetitive Surge Current (PW = 100
µs,
120 pps)
Total Power Dissipation @ 25°C Ambient
Derate above 25°C
V
DRM
I
TSM
P
D
Symbol
T
STG
T
OPR
T
SOL
T
J
V
ISO
P
D
I
F
V
R
P
D
Device
All
All
All
All
All
All
All
All
All
MOC3031M/2M/3M
MOC3041M/2M/3M
All
All
All
Value
-40 to +150
-40 to +85
260 for 10 sec
-40 to +100
7500
250
2.94
60
6
120
1.41
250
400
1
150
1.76
Units
°C
°C
°C
°C
Vac(pk)
mW
mW/°C
mA
V
mW
mW/°C
V
A
mW
mW/°C
Note
1. Isolation surge voltage, V
ISO
, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4,
5 and 6 are common.
2001 Fairchild Semiconductor Corporation
DS300256
8/06/01
1 OF 9
www.fairchildsemi.com
6-PIN DIP ZERO-CROSS
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)
MOC3031M
MOC3032M
MOC3033M
MOC3041M
MOC3042M
MOC3043M
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters
EMITTER
Input Forward Voltage
Reverse Leakage Current
DETECTOR
Peak Blocking Current,Either Direction
I
F
= 30 mA
V
R
= 6 V
Rated V
DRM
, I
F
= 0 (note 1)
V
F
I
R
I
DRM1
V
TM
dv/dt
All
All
All
All
All
1.8
1000
1.25
0.01
1.5
100
100
3
V
µA
nA
V
V/µs
Test Conditions
Symbol
Device
Min
Typ
Max
Units
Peak On-State Voltage,Either Direction
I
TM
= 100 mA peak, I
F
= 0
Critical Rate of Rise of Off-State Voltage
I
F
= 0 (figure 9, note 3)
TRANSFER CHARACTERISTICS
DC Characteristics
LED Trigger Current
Holding Current, Either Direction
(T
A
= 25°C Unless otherwise specified.)
Symbol
I
FT
I
H
Device
MOC3031M/MOC3041M
MOC3032M/MOC3042M
MOC3033M/MOC3043M
All
400
Min
Typ
Max
15
10
5
µA
mA
Units
Test Conditions
Main terminal voltage = 3V (note 2)
ZERO CROSSING CHARACTERISTICS
Characteristics
Inhibit Voltage
Leakage in Inhibited State
Test Conditions
(T
A
= 25°C Unless otherwise specified.)
Symbol
V
IH
I
DRM2
Device
All
All
Min
Typ
Max
20
500
Units
V
µA
I
F
= rated I
FT
, MT1-MT2 voltage above
which device will not trigger off-state
I
F
= rated I
F
, rated V
DRM
, off-state
Note
1. Test voltage must be applied within dv/dt rating.
2. All devices are guaranteed to trigger at an I
F
value less than or equal to max I
FT
. Therefore, recommended operating I
F
lies between
max I
FT
(15 mA for MOC3031M & MOC3041M, 10 mA for MOC3032M & MOC3042M, 5 mA for MOC3033M & MOC3043M) and
absolute max I
F
(60 mA).
3. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
www.fairchildsemi.com
2 OF 9
8/06/01
DS300256
6-PIN DIP ZERO-CROSS
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)
MOC3031M
MOC3032M
MOC3033M
MOC3041M
MOC3042M
MOC3043M
Figure 1. LED Forward Voltage vs. Forward Current
1.6
800
Figure 2. On-State Characteristics
I
F
= 30mA
1.5
600
T
A
= 25
o
C
I
TM
, ON-STATE CURRENT (mA)
V
F
- FORWARD VOLTAGE (V)
1.4
400
1.3
T
A
= -40
o
C
T
A
= 25
o
C
T
A
= 85
o
C
1.0
200
1.2
0
1.1
-200
-400
0.9
-600
-800
0.8
0.1
1
10
100
-4
-3
-2
-1
0
1
2
3
4
I
F
- LED FORWARD CURRENT (mA)
V
TM
, ON-STATE VOLTAGE (VOLTS)
Figure 3. Trigger Current vs. Temperature
1.3
10000
Figure 4. Leakage Current, I
DRM
vs. Temperature
1.2
1000
I
DRM
, LEAKAGE CURRENT (nA)
I
FT
, NORMALIZED
1.1
100
1.0
10
0.9
NORMALIZED TO
T
A
= 25
o
C
1
0.1
0.8
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
T
A
, AMBIENT TEMPERATURE (
o
C)
T
A
, AMBIENT TEMPERATURE (
o
C)
DS300256
8/06/01
3 OF 9
www.fairchildsemi.com
6-PIN DIP ZERO-CROSS
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)
MOC3031M
MOC3032M
MOC3033M
MOC3041M
MOC3042M
MOC3043M
Figure 5. I
DRM2
- Leakage in Inhibit State vs. Temperature
1.8
Figure 6. LED Current Required to Trigger vs. LED Pulse Width
16
NORMALIZED TO
PW
IN
>> 100 µs
I
FT
, LED TRIGGER CURRENT (NORMALIZED)
80
100
1.6
14
1.4
12
I
DRM2
, NORMALIZED
I
F
= RATED I
FT
1.2
10
1.0
8
0.8
6
0.6
4
0.4
-40
-20
0
20
40
60
2
T
A
, AMBIENT TEMPERATURE (
o
C)
0
1
10
100
PW
IN
, LED TRIGGER PULSE WIDTH (µs)
Figure 7. Holding Current, I
H
vs. Temperature
3.2
1.3
Figure 8. Inhibit Voltage vs. Temperature
2.8
1.2
I
H
, HOLDING CURRENT (NORMALIZED)
2.4
NORMALIZED TO
T = 25oC
A
2.0
V
INH
- NORMALIZED
1.1
1.0
1.6
1.2
0.9
0.8
0.8
0.4
0.7
0.0
-40
-20
0
20
40
60
o
80
100
-40
-20
0
20
40
60
o
80
100
T
A
, AMBIENT TEMPERATURE ( C)
T
A
, AMBIENT TEMPERATURE ( C)
www.fairchildsemi.com
4 OF 9
8/06/01
DS300256
6-PIN DIP ZERO-CROSS
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)
MOC3031M
MOC3032M
MOC3033M
MOC3041M
MOC3042M
MOC3043M
+250 for MOC303XM
+400 for MOC304XM
Vdc
R
TEST
R = 10 kΩ
C
TEST
PULSE
INPUT
MERCURY
WETTED
RELAY
D.U.T.
X100
SCOPE
PROBE
1. The mercury wetted relay provides a high speed repeated
pulse to the D.U.T.
2. 100x scope probes are used, to allow high speeds and
voltages.
3. The worst-case condition for static dv/dt is established by
triggering the D.U.T. with a normal LED input current, then
removing the current. The variable R
TEST
allows the dv/dt to
be gradually increased until the D.U.T. continues to trigger in
response to the applied voltage pulse, even after the LED
current has been removed. The dv/dt is then decreased until
the D.U.T. stops triggering.
τ
RC is measured at this point and
recorded.
Figure 9. Static dv/dt Test Circuit
Vmax = 250 V
APPLIED VOLTAGE
WAVEFORM
158 V
0.63 Vmax
τ
RC
Vmax = 400 V
APPLIED VOLTAGE
WAVEFORM
158
=
τ
RC
252 V
0.63 Vmax
τ
RC
0 VOLTS
τ
RC
dv/dt =
0 VOLTS
τ
RC
dv/dt =
252
=
τ
RC
Figure 10. Static dv/dt Test Waveform
(MOC3031M, MOC3032M, MOC3033M)
Figure 11. Static dv/dt Test Waveform
(MOC3041M, MOC3042M, MOC3043M)
Typical circuit (Fig 12, 13) for use when hot line switching is required. In this circuit the “hot” side of the line is switched and the load
connected to the cold or neutral side. The load may be connected to either the neutral or hot line.
R
in
is calculated so that I
F
is equal to the rated I
FT
of the part, 5 mA for the MOC3033M and MOC3043M, 10 mA for the MOC3032M
and MOC3042M, or 15 mA for the MOC3031M and MOC3041M. The 39 ohm resistor and 0.01
µF
capacitor are for snubbing of the triac
and may or may not be necessary depending upon the particular triac and load used.
R
in
V
CC
1
2
MOC3031M
MOC3032M
MOC3033M
6
5
180
Ω
HOT
V
CC
R
in
1
2
MOC3041M
MOC3042M
MOC3043M
6
5
360
Ω
HOT
39
Ω
4
1k
*
115 VAC
3
39
Ω
4
330
*
240 VAC
3
0.01
0.01
LOAD
NEUTRAL
LOAD
NEUTRAL
*
For highly inductive loads (power factor < 0.5), change this value to 360 ohms.
Figure 12. Hot-Line Switching Application Circuit
(MOC3031M, MOC3032M, MOC3033M)
*
For highly inductive loads (power factor < 0.5), change this value to 360 ohms.
Figure 13. Hot-Line Switching Application Circuit
(MOC3041M, MOC3042M, MOC3043M)
DS300256
8/06/01
5 OF 9
www.fairchildsemi.com
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