SMBT3904...PN
NPN / PNP Silicon Switching Transistor Array
•
High current gain
•
Low collector-emitter saturation voltage
•
Two (galvanic) internal isolated NPN / PNP
transistor in one package
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
SMBT3904PN
SMBT3904UPN
C1
6
B2
5
E2
4
TR2
TR1
1
E1
2
B1
3
C2
EHA07177
Type
SMBT3904PN
SMBT3904UPN
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
T
S
≤
115 °C, SMBT3904PN
Marking
s3P
s3P
1=E
1=E
Pin Configuration
2=B
2=B
3=C
3=C
4=E
4=E
5=B
5=B
6=C
6=C
Package
SOT363
SC74
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
tot
Value
40
40
6
200
250
330
Unit
V
mA
mW
T
S
≤
105 °C, SMBT3904UPN
Junction temperature
Storage temperature
1
Pb-containing
T
j
T
stg
150
-65 ... 150
°C
package may be available upon special request
1
2007-03-28
SMBT3904...PN
Thermal Resistance
Parameter
Junction - soldering point
1)
SMBT3904PN
SMBT3904UPN
Symbol
R
thJS
Value
≤
140
≤
135
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
40
V
I
C
= 1 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
40
6
-
-
-
-
-
-
50
nA
-
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
DC current gain
2)
I
C
= 100 µA,
V
CE
= 1 V
I
C
= 1 mA,
V
CE
= 1 V
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 50 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
40
70
100
60
30
V
CEsat
-
-
-
-
-
-
-
300
-
-
V
Collector-emitter saturation voltage
2)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
-
-
V
BEsat
-
-
-
-
0.25
0.4
0.85
0.95
Base emitter saturation voltage
2)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
1
For
2
Pulse
0.65
-
calculation of
R
thJA
please refer to Application Note Thermal Resistance
test: t < 300µs; D < 2%
2
2007-03-28
SMBT3904...PN
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Delay time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
= 1 mA,
V
BE(off)
= 0.5 V
Rise time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
= 1 mA,
V
BE(off)
= 0.5 V
Storage time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
=
I
B2
= 1 mA
Fall time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
=
I
B2
= 1 mA
Noise figure
I
C
= 100 µA,
V
CE
= 5 V,
f
= 1 kHz,
∆
f
= 200 Hz,
R
S
= 1 kΩ
F
-
-
5
dB
t
f
-
-
75
t
stg
-
-
225
t
r
-
-
35
t
d
-
-
35
ns
C
eb
-
-
10
C
cb
-
-
3.5
pF
f
T
250
-
-
MHz
typ.
max.
Unit
3
2007-03-28
SMBT3904...PN
DC current gain
h
FE
=
ƒ(I
C
)
V
CE
= 10 V, normalized
10
1
h
FE
EHP00765
Saturation voltage
I
C
=
ƒ(V
BEsat
;
V
CEsat
)
h
FE
= 10
EHP00756
2
5
Ι
C
mA
10
2
5
125 C
10
0
25 C
10
1
5
V
CE
V
BE
-55 C
5
10
-1
10
-1
5 10
0
5 10
1
mA 10
2
2
10
0
0
0.2
0.4
0.6
Ι
C
0.8
1.0 V 1.2
V
BE sat
,
V
CE sat
Total power dissipation
P
tot
=
ƒ(T
S
)
SMBT3904PN
Total power dissipation
P
tot
=
ƒ(T
S
)
SMBT3904UPN
300
mW
360
mW
250
225
300
270
P
tot
175
150
125
100
75
50
25
0
0
15
30
45
60
75
90 105 120
°C
150
P
tot
200
240
210
180
150
120
90
60
30
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
4
2007-03-28
SMBT3904...PN
Permissible Pulse Load
R
thJS
=
ƒ(t
p
)
SMBT3904PN
10
3
K/W
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ(t
p
)
SMBT3904PN
10
3
10
2
P
totmax
/P
totDC
-
10
2
10
1
10
0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
1
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
Permissible Puls Load
R
thJS
=
ƒ
(t
p
)
SMBT3904UPN
10
3
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ(t
p
)
SMBT3904UPN
10
2
P
totmax
/P
totDC
K/W
10
2
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
-5
-4
-3
-2
0
10
0 -6
10
10
10
10
10
s
10
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
5
2007-03-28
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