PTMA210152M
Confidential, Limited Internal Distribution
Wideband RF LDMOS Integrated Power Amplifier
15 W, 1800 – 2200 MHz
Description
The PTMA210152M is a wideband, matched, 15-watt, 2-stage
LDMOS integrated amplifier intended for wideband driver
applications in the 1800 to 2200 MHz band. This device is offered in
a 20-lead thermally-enhanced overmolded package for cool and
reliable operation.
PTMA210152M
Package PG-DSO-20-63
Broadband Performance
V
DD
= 28 V, I
DQ1
= 80 mA, I
DQ1
= 160 mA
Fixture Tuned For 2110 - 2170 MHz
32
30
28
26
20
15
5
0
-5
-10
10
Features
•
•
•
Designed for wide RF bandwidth and low memory
effects
Broadband input on-chip matching
Typical two-carrier WCDMA performance at
2140 MHz, 28 V, 7 W avg.
- Gain = 28.5 dB
- Efficiency = 33 %
- IMD3 = –32 dBc
Typical CW performance at 2140 MHz, 28 V
- Output power at P–1dB ~ 20 W
- Efficiency > 49%
Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
Capable of handling 10:1 VSWR @ 28 V,
15 W (CW) output power
Thermally-enhanced RoHS-compliant package
24
22
20
18
16
14
12
1500
1700
1900
2100
2300
Return Loss (dB)
Gain
Gain (dB)
•
Return Loss
-15
-20
-25
-30
2500
•
•
•
Frequency (MHz)
RF Characteristics
Two-carrier WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test
fixture)
V
DS
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA, ƒ = 2110 – 2170 MHz, P
OUT
= 7 W average
Characteristic
Gain
Power Added Efficiency
Input Return Loss
Adjacent Channel Power Ratio
Intermodulation Distortion
P
OUT
Conditions
Symbol
G
ps
Min
—
—
—
—
—
Typ
28.5
33
–14
–36
–32
Max
—
—
—
—
—
Unit
dB
%
dB
dBc
dBc
η
IRL
ACPR
IMD3
table continued next page
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 15
Rev. 04, 2010-04-16
*See Infineon distributor for future availability.
PTMA210152M
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-carrier WCDMA Measurements
(cont.)
V
DS
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA, ƒ = 2110 – 2170 MHz, P
OUT
= 7 W average
Characteristic
Spurs Load 3:1
Gain Flatness
Symbol
—
ΔG
Min
—
—
Typ
–60
0.43
Max
—
—
Unit
dBc
dB
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA, P
OUT
= 15 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
Symbol
G
ps
Min
27.5
33
—
—
Typ
28.5
34
–33
–14
Max
30
—
–30
–10
Unit
dB
%
dBc
dB
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
—
2
—
Typ
—
—
—
0.6
3.5
2.5
—
Max
—
1.0
10.0
—
—
3
1.0
Unit
V
µA
µA
Ω
Ω
V
µA
On-State Resistance
Stage 1
Stage 2
V
GS
= 10 V, V
DS
= 0.1 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V,
I
DQ
= CCC mA
V
GS
= 10 V, V
DS
= 0 V
Operating Gate Voltage
Gate Leakage Current
*See Infineon distributor for future availability.
Data Sheet
2 of 15
Rev. 04, 2010-04-16
PTMA210152M
Confidential, Limited Internal Distribution
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Input Power
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 15 W CW)
Stage 1
Stage 2
T
STG
R
θJC
R
θJC
Symbol
V
DSS
V
GS
T
J
P
IN
P
D
Value
65
–0.5 to +12
200
15
70
0.4
–40 to +150
10.7
2.9
Unit
V
V
°C
dBm
W
W/°C
°C
°C/W
°C/W
Moisture Sensitivity Level
Level
3
Test Standard
IPC/JEDEC J-STD-020
Package Temperature
260
Unit
°C
Ordering Information
Type and Version
PTMA210152M V1
Package Outline
PG-DSO-20-63
Package Description
Thermally-enhanced surface-mount
Shipping
Tape
Data Sheet
3 of 15
Rev. 04, 2010-04-16
PTMA210152M
Confidential, Limited Internal Distribution
Typical Performance at 2140 MHz
(data taken in a production test fixture)
CW Performance
V
DD
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA
For 2110, 2140, 2170 MHz
30
29
28
27
55
30
CW Performance
V
DD1
= 28 V, V
DD2
= 32, 28, 24 V,
I
DQ1
= 80 mA, I
DQ2
= 160 mA, ƒ = 2140 MHz
Power Added Efficiency (%)
50
29
28
27
Gain
2110 MHz
2140 MHz
2170 MHz
45
40
35
30
25
20
15
Gain
Gain (dB)
26
25
24
23
22
21
20
29
Gain (dB)
26
25
24
23
22
21
20
29
31
33
35
37
39
41
43
45
24 V
28 V
32 V
Efficiency
31
33
35
37
39
41
43
45
10
5
Output Power (dBm)
Output Power (dBm)
WCDMA Performance
V
DD
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA,
series show 2110, 2140, 2170 MHz
45
-25
45
Two-tone Drive-up
V
DD
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA
For 2110, 2140, 2170 MHz
5
2110 MHz
2140 MHz
2170 MHz
Efficiency
-5
-15
-25
Power Added Efficiency (%)
ACPR
ACPR (dBc)
-35
-40
-45
Power Added Efficiency (%)
40
35
30
25
20
15
10
30
2110 MHz
2140 MHz
2170 MHz
-30
40
35
30
25
20
15
10
5
30
IMD3
-35
-45
-55
-65
-75
Efficiency
-50
-55
-60
32
34
36
38
40
32
34
36
38
40
42
44
Output Power (dBm)
Output Power, avg. ( dBm )
*See Infineon distributor for future availability.
Data Sheet
4 of 15
Rev. 04, 2010-04-16
IMD3 (dBc)
PTMA210152M
Confidential, Limited Internal Distribution
Typical Performance at 2140 MHz
(cont.)
Two-carrier WCDMA Performance
V
DD
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA,
series show 2110, 2140, 2170 MHz
45
-25
45
Two-carrier WCDMA Performance
V
DD
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA,
series show 2110, 2140, 2170 MHz
-25
2110 MHz
2140 MHz
2170 MHz
-30
-35
-40
Power Added Efficiency (%)
40
35
30
25
20
15
10
30
-30
-35
Power Added Efficiency (%)
2110 MHz
2140 MHz
2170 MHz
40
35
30
25
20
15
10
30
IMD3 (dBc)
-40
IMD3
-45
-50
ACPR
-45
-50
Efficiency
32
34
36
38
40
42
-55
-60
Efficiency
32
34
36
38
40
42
-55
-60
Output Power (dBm)
Output Power (dBm)
Two-carrier WCDMA Performance
V
DD
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA,
series show 2140 MHz at various temperatures
45
Six-carrier TD-SCDMA Performance
V
DD
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA,
series show 2110, 2140, 2170 MHz
45
-25
2110 MHz
2140 MHz
2170 MHz
-30
-25
-30
ACPR (dBc)
-35
-40
ACPR
-45
-50
-55
Efficiency
-60
38
40
42
Power Added Efficiency (%)
Power Added Efficiency (%)
40
35
30
25
20
15
10
30
–
25 °C
40
35
30
25
20
15
10
30
-40
ACPR
-45
-50
Efficiency
-55
-60
32
34
36
32
34
36
38
40
42
Output Power (dBm)
Output Power (dBm)
Data Sheet
5 of 15
Rev. 04, 2010-04-16
ACPR (dBc)
25 °C
90 °C
-35
ACPR (dBc)
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