Preliminary PTFA181001GL
PTFA181001HL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
100 W, 1805 – 1880 MHz
Description
The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs
designed for EDGE and WCDMA power amplifier applications in the
1805 to 1880 MHz band. Features include input and output matching,
and thermally-enhanced open-cavity packages with copper flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA181001GL*
Package PG-63248-2
PTFA181001HL*
Package PG-64248-2
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 750 mA, ƒ = 1880 MHz, 3GPP WCDMA
signal, PAR = 8 dB, 10 MHz carrier spacing
-30
35
Features
•
Thermally-enhanced, plastic open-cavity
(EPOC™) packages with copper flanges, Pb-free
and RoHS compliant
Broadband internal matching
Typical EDGE performance at 1879.8 MHz, 28 V
- Average output power = 45 W
- Linear Gain = 16.5 dB
- Efficiency = 36%
- EVM RMS = 1.8%
Typical CW performance, 1880 MHz, 28 V
- Output power at P–1dB = 120 W
- Gain 15.5 dB
- Efficiency = 52%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability
Capable of handling 10:1 VSWR @ 28 V,
100 W (CW) output power
•
•
Drain Efficiency (%)
IM3 (dBc), ACPR (dBc)
-35
-40
-45
-50
-55
34
36
38
Efficiency
IM3
30
25
20
ACPR
•
15
10
5
•
•
•
40
42
44
46
Average Output Power (dBm)
RF Characteristics
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 750 mA, P
OUT
= 45 W (AVG), ƒ = 1879.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 KHz
Modulation Spectrum @ 600 KHz
Gain
Drain Efficiency
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
RMS EVM
ACPR
ACPR
G
ps
Min
—
—
—
—
—
Typ
1.8
–61
–73
16.5
36
Max
—
—
—
—
—
Unit
%
dBc
dBc
dB
%
η
D
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Preliminary Data Sheet
1 of 11
Rev. 01, 2008-06-15
Preliminary PTFA181001GL
PTFA181001HL
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 750 mA, P
OUT
= 100 W PEP, ƒ = 1850 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
—
—
—
Typ
16.5
41
–30
Max
—
—
—
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.085
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
D
= 750 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 100 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
TBD
TBD
–40 to +150
TBD
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA181001GL* V1
PTFA181001HL* V1
Package Type
PG-63248-2
PG-64248-2
Package Description
Thermally-enhanced, plastic
open-cavity, slotted flange, single-ended
Thermally-enhanced, plastic
open-cavity, earless flange, single-ended
Shipping
Tray
Tray
Marking
PTFA181001GL
PTFA181001HL
*See Infineon distributor for future availability.
Preliminary Data Sheet
2 of 11
Rev. 01, 2008-06-15
Preliminary PTFA181001GL
PTFA181001HL
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
Edge EVM and Modulation Spectrum
vs. Quiescent Current
V
DD
= 28V, ƒ = 1879.8 MHz, P
OUT
= 46.5 dBm
2.4
-10
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ
= 750 mA, ƒ = 1879.8 MHz
-20
45
Modulation Spectrum (dB)
EVM RMS (average %)
.
2
1.8
1.6
1.4
1.2
1
0.65
-30
-40
-40
-50
-60
-70
-80
-90
-100
37
39
41
43
45
47
49
35
400 kHz
30
25
20
400 KHz
-50
-60
-70
600 kHz
15
10
5
600 KHz
0.70
0.75
0.80
0.85
-80
-90
0.90
Quiescent Current (A)
Output Power (dBm)
EDGE EVM Performance
V
DD
= 28 V, I
DQ
= 750 mA, ƒ = 1879.8 MHz
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V
DD
= 28 V, I
DQ
= 750 mA, ƒ
1
=1879 MHz, ƒ
2
= 1880 MHz
45
8
-20
-25
EVM RMS (average %)
.
7
6
5
4
3
2
1
0
37
39
41
Efficiency
40
35
30
25
20
Drain Efficiency (%)
-30
3rd Order
IMD (dBc)
-35
-40
-45
-50
-55
-60
-65
37
39
41
43
45
47
49
5th
7th
EVM
15
10
5
43
45
47
49
Output Power (dBm)
Output Power, Avg. (dBm)
Preliminary Data Sheet
3 of 11
Rev. 01, 2008-06-15
Drain Efficiency (%)
2.2
EVM
-20
Modulation Spectrum (dBc)
-30
Efficiency
40
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