PTF210101M
High Power RF LDMOS Field Effect Transistor
10 W, 2110 – 2170 MHz
Description
The PTF210101M is an unmatched 10-watt
GOLDMOS
®
FET intended for
class AB base station applications in the 2110 to 2170 MHz band. This
LDMOS device offers excellent gain, efficiency and linearity performance in
a small footprint.
PTF210101M
Package PG-RFP-10
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 180 mA, ƒ = 2170 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 3.84 MHz bandwidth
-25
30
Features
•
Typical WCDMA performance
- Average output power = 2.0 W
- Gain = 15 dB
- Efficiency = 20%
- ACPR = –45 dB
Typical CW performance
- Output Power at P–1dB = 10 W
- Gain = 14 dB
- Efficiency = 50%
Integrated ESD protection:
Human Body Model Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
Pb-free and RoHS compliant
Efficiency
-30
25
20
15
-35
-40
-45
-50
-55
24
28
32
36
Drain Efficiency (%)
Adjacent Channel
Power Ratio (dBc)
•
ACPR
•
•
•
•
•
10
5
0
Average Output Power (dBm)
RF Characteristics
Two-Tone Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 180 mA, P
OUT
= 10 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
15
35
—
Typ
—
—
—
Max
—
—
–28
Unit
dB
%
dBc
η
D
IMD
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
*See Infineon distributor for future availability.
Rev. 02.1, 2009-02-18
PTF210101M
Typical Performance
(data taken in production test fixture)
Power Sweep, CW Conditions
V
DD
= 28 V, I
DQ
= 180 mA, ƒ = 2170 MHz
Two-Tone Drive-up
V
DD
= 28 V, I
DQ
= 180 mA, ƒ
1
= 2169, ƒ
2
= 2170 MHz
17
60
-20
Efficiency
16
50
Intermodulation Distortion (dBc)
-30
-40
-50
-60
-70
-80
26
28
30
32
34
36
38
IM3
IM5
IM7
Gain (dB)
15
14
13
12
11
15
Gain
40
30
20
10
0
Drain Efficiency (%)
20
25
30
35
40
45
40
42
Output Power (dBm)
Output Power, PEP (dBm)
Two-Tone Power Sweep
V
DD
= 28 V, I
DQ
= 180 mA, ƒ
1
= 2169, ƒ
2
= 2170 MHz
Broadband Performance
V
DD
= 28 V, I
DQ
= 180 mA, P
OUT
= 41 dBm
16
15
45
40
60
-10
Gain (dB), Efficiency (%)
35
30
25
Efficiency (%)
Gain
Gain (dB)
14
13
12
11
26
28
30
32
34
36
38
40
42
40
30
20
10
-12
Return Loss
Efficiency
20
15
10
5
0
-13
-14
Gain
2120
2140
2160
-15
-16
2180
0
2100
Output Power, PEP (dBm)
Frequency (MHz)
Data Sheet
3 of 8
Rev. 02.1, 2009-02-18
Input Return Loss (dB)
50
Efficiency
-11
PTF210101M
Reference Circuit
C1
0.001µF
R2
1.3K
V
R1
1.2K
V
QQ1
LM7805
V
DD
Q1
BCP56
C2
0.001µF
R3
220
V
C3
0.001µF
R4
2KV
R5
10
V
C4
10 µF
35V
R6
10
V
C5
0.1µF
R7
1K
V
C6
10µF
35V
C7
10pF
l
8
R8
220
V
C12
10pF
C13
0.1µF
C14
1µF
C15
10µF
50V
V
DD
l
11
C16
10pF
C9
10pF
RF_IN
l
7
DUT
l
1
l
2
C8
1.2pF
l
3
l
4
l
5
C10
1.4pF
l
6
l
9
l
10
C11
2.4pF
l
12
l
13
RF_OUT
Reference circuit schematic for ƒ = 2170 MHz
Circuit Assembly Information
DUT
PCB
PTF210101M
0.76 mm [.030"] thick,
ε
r
= 3.48
LDMOS Transistor
Rogers 4350
1 oz. copper
Microstrip
Electrical Characteristics at 2170 MHz
1
0.048
0.139
0.034
0.025
0.068
0.028
0.176
0.193
0.015
0.233
0.197
0.020
0.072
λ,
50.0
Ω
λ,
50.0
Ω
λ,
50.0
Ω
λ,
9.6
Ω
λ,
9.6
Ω
λ,
9.6
Ω
λ,
81.0
Ω
λ,
81.0
Ω
λ,
12.9
Ω
λ,
12.9
Ω
λ,
67.0
Ω
λ,
50.0
Ω
λ,
50.0
Ω
Dimensions: L x W (mm)
3.99 x 1.63
11.63 x 1.63
2.84 x 1.63
1.93 x 14.27
5.21 x 14.27
2.16 x 14.27
15.11 x 0.69
16.66 x 0.69
1.19 x 10.16
17.93 x 10.16
16.76 x 1.02
1.68 x 1.63
6.68 x 1.63
Dimensions: L x W (in.)
0.157
0.458
0.112
0.076
0.205
0.085
0.595
0.656
0.047
0.706
0.660
0.066
0.263
x
x
x
x
x
x
x
x
x
x
x
x
x
0.064
0.064
0.064
0.562
0.562
0.562
0.027
0.027
0.400
0.400
0.040
0.064
0.064
l
1
l
2
l
3
l
4
l
5
l
6
l
7
l
8
l
9
l
10
l
11
l
12
l
13
1
Electrical characteristics are rounded.
Data Sheet
5 of 8
Rev. 02.1, 2009-02-18
210101 _ch
ms
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