PTF180101M
High Power RF LDMOS Field Effect Transistor
10 W, 1.0 – 2.0 GHz
Description
The PTF180101M is an unmatched 10-watt
GOLDMOS
®
FET intended for
class AB base station applications in the 1 to 2 GHz band. This LDMOS
device offers excellent gain, efficiency and linearity performance in a small
footprint.
PTF180101M
Package PG-RFP-10
EDGE Performance
V
DD
= 28v, I
DQ
= 180 mA, ƒ = 1960 MHz
Features
•
Typical EDGE performance
- Average output power = 4.0 W
- Gain = 17 dB
- Efficiency = 31%
- EVM = 1.3 %
Typical CW performance
- Output Power at P–1dB = 10 W
- Gain = 16 dB
- Efficiency = 50%
Integrated ESD protection:
Human Body Model Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
Pb-free and RoHS compliant
1.50
EVM RMS (Average %)
40
•
1.25
30
Drain Efficiency (%)
.
1.00
Efficiency
20
•
•
•
•
0.75
EVM
0.50
29
30
31
32
33
34
35
36
37
Output Power (dBm)
10
0
•
RF Characteristics
Two-Tone Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 180 mA, P
OUT
= 10 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
16.5
35
—
Typ
—
—
—
Max
—
—
–28
Unit
dB
%
dBc
η
D
IMD
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
*See Infineon distributor for future availability.
Rev. 05.1, 2009-02-18
PTF180101M
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 A
V
DS
= 28 V, I
DQ
= 180 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.5
—
Typ
—
—
0.83
3.2
—
Max
—
1.0
—
4.0
1.0
Unit
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 10 W DC )
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
150
18.8
0.15
–40 to +150
6.5
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type
PTF180101M
Package Outline
PG-RFP-10
Package Description
Molded plastic, SMD
Marking
0181
*See Infineon distributor for future availability.
Data Sheet
2 of 8
Rev. 05.1, 2009-02-18
PTF180101M
Typical Performance
(data taken in production test fixture)
CW Performance
V
DD
= 28 V, I
DQ
= 180 mA, ƒ = 1960 MHz
Two-Tone Performance
V
DD
= 28 V, I
DQ
= 180 mA, ƒ = 1960/1961 MHz
20
19
Gain (dB)
18
17
16
15
14
15
20
25
30
35
40
45
Power Output (dBm)
Efficiency
Gain
60
50
Drain Efficiency (%)
40
30
20
10
0
-20
-30
-40
IMD (dBc)
-50
-60
-70
-80
-90
25
30
35
3rd order
5th order
70
50
40
7th order
Efficiency
30
20
10
0
40
45
Output Power (dBm), PEP
P–1dB Broadband Performance
V
DD
= 28 V, I
DQ
= 180 mA
20
60
Modulation Spectrum (dBc)
EDGE Performance
V
DD
= 28 V, I
DQ
= 180 mA, ƒ = 1960 MHz
Offset f = 200 kHz
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
29
30
31
32
33
34
35
36
37
Offset ƒ = 400 kHz
Offset ƒ = 600 kHz
Gain & Return Loss (dB)
15
10
5
0
-5
-10
-15
-20
-25
1920
1940
1960
1980
Efficiency
50
Input Return Loss
40
30
2000
Frequency (MHz)
Drain Efficiency (%).
Gain
Output Power (dBm)
Data Sheet
3 of 8
Rev. 05.1, 2009-02-18
Drain Efficiency (%)
60
PTF180101M
Typical Performance
(cont.)
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current.
1.04
0.05
0.28
0.51
0.74
0.97
1.2
Normalized Bias Voltage
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
0
20
40
60
80
100
Case Temperature (ºC)
Broadband Circuit Impedance
Z Source
Z Load
0. 1
D
WA
Z
0
= 50
Ω
G
S
Z Load
0
.0
R
2.89
2.88
2.87
2.85
2.84
2.82
2.81
2.80
2.78
2.77
2.76
jX
-1.38
-1.30
-1.21
-1.13
-1.05
-0.97
-0.89
-0.81
-0.73
-0.65
-0.57
4 of 8
2000 MHz
0.1
MHz
1900
1910
1920
1930
1940
1950
1960
1970
1980
1990
2000
Data Sheet
R
0.80
0.79
0.79
0.78
0.77
0.77
0.76
0.75
0.75
0.74
0.74
jX
-3.71
-3.66
-3.61
-3.56
-3.51
-3.47
-3.42
-3.37
-3.33
-3.28
-3.24
W
A RD
L
OA
D
-
T HS
T
O
L E
NG
Frequency
Z Source
Ω
Z Load
Ω
1900 MHz
2000 MHz
1900 MHz
0. 1
Z Source
W
<---
A VE
0.
2
Rev. 05.1, 2009-02-18
PTF180101M
Reference Circuit
C1
0.001µF
R2
1.3K
V
R1
1.2K
V
QQ1
LM7805
Q1
B C P56
C2
0.001µF
R3
2KV
C3
0.001µF
R4
2KV
V
DD
R9
1V
R6
10V
C5
0.1µF
R7
1K
V
C6
+
10pF
C7
10µF
35V
C8
10pF
L1
C13
10pF
R8
220V
R5
10V
+
C4
10µF
35V
l
7
+
C14
10µF
50V
C15
10pF
C16
0.1µF
+
V
DD
C17
10µF
50V
l
10
l
6
C10
10pF
C12
4.7pF
DUT
C18
10pF
RF_IN
l
1
l
2
C9
0.9pF
l
3
W1
½ TURN
l
4
l
5
C11
4.7pF
l
8
l
9
l
11
RF_OUT
180101m_sch
Reference circuit schematic for ƒ = 1990 MHz
Circuit Assembly Information
DUT
PCB
Microstrip
PTF180101M
0.76 mm [.030"] thick,
ε
r
= 4.5
Electrical Characteristics at 1990 MHz
1
0.059
0.093
0.016
0.129
0.026
0.153
0.194
0.014
0.236
0.187
0.077
λ,
50.0
Ω
λ,
50.0
Ω
λ,
50.0
Ω
λ,
9.6
Ω
λ,
9.6
Ω
λ,
78.0
Ω
λ,
78.0
Ω
λ,
12.9
Ω
λ,
12.9
Ω
λ,
66.0
Ω
λ,
50.0
Ω
LDMOS Transistor
Rogers RO4320
Dimensions: L x W (mm)
5.69 x 1.60
8.48 x 1.60
1.09 x 1.60
10.77 x 14.22
2.13 x 14.22
14.48 x 0.71
18.39 x 0.71
1.27 x 10.16
19.91 x 10.16
17.40 x 0.99
6.99 x 1.60
2 oz. copper
Dimensions: L x W (in.)
0.224
0.334
0.043
0.424
0.084
0.570
0.724
0.050
0.784
0.685
0.275
x
x
x
x
x
x
x
x
x
x
x
0.063
0.063
0.063
0.560
0.560
0.028
0.028
0.400
0.400
0.039
0.063
l
1
l
2
l
3
l
4
l
5
l
6
l
7
l
8
l
9
l
10
l
11
1
Electrical characteristics are rounded.
Data Sheet
5 of 8
Rev. 05.1, 2009-02-18
PCB设计
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