OptiMOS鈩? Power-Transistor
| IPB06CN10NG_10 | IPB06CN10NG | IPI06CN10NG | IPP06CN10NG | |
|---|---|---|---|---|
| 描述 | OptiMOS鈩? Power-Transistor | OptiMOS鈩? Power-Transistor | OptiMOS鈩? Power-Transistor | OptiMOS鈩? Power-Transistor |
| 是否Rohs认证 | - | 符合 | 符合 | 符合 |
| 零件包装代码 | - | D2PAK | TO-262AA | TO-220AB |
| 包装说明 | - | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | - | 4 | 3 | 3 |
| Reach Compliance Code | - | compliant | compli | compli |
| ECCN代码 | - | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | - | 480 mJ | 480 mJ | 480 mJ |
| 配置 | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | - | 100 V | 100 V | 100 V |
| 最大漏极电流 (Abs) (ID) | - | 100 A | 100 A | 100 A |
| 最大漏极电流 (ID) | - | 100 A | 100 A | 100 A |
| 最大漏源导通电阻 | - | 0.0062 Ω | 0.0065 Ω | 0.0065 Ω |
| FET 技术 | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | - | TO-263AB | TO-262AA | TO-220AB |
| JESD-30 代码 | - | R-PSSO-G2 | R-PSIP-T3 | R-PSFM-T3 |
| JESD-609代码 | - | e3 | e3 | e3 |
| 湿度敏感等级 | - | 1 | 1 | 1 |
| 元件数量 | - | 1 | 1 | 1 |
| 端子数量 | - | 2 | 3 | 3 |
| 工作模式 | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | - | 175 °C | 175 °C | 175 °C |
| 封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | - | SMALL OUTLINE | IN-LINE | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | - | 260 | 260 | 260 |
| 极性/信道类型 | - | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | - | 214 W | 214 W | 214 W |
| 最大脉冲漏极电流 (IDM) | - | 400 A | 400 A | 400 A |
| 认证状态 | - | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | - | YES | NO | NO |
| 端子面层 | - | MATTE TIN | MATTE TIN | MATTE TIN |
| 端子形式 | - | GULL WING | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | - | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | - | 40 | 40 | NOT SPECIFIED |
| 晶体管应用 | - | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | - | SILICON | SILICON | SILICON |
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