SKW15N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
•
Lower
E
off
compared to previous generation
•
Short circuit withstand time – 10
µs
•
Designed for:
- Motor controls
- Inverter
- SMPS
•
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
•
Qualified according to JEDEC
1
for target applications
•
Pb-free lead plating; RoHS compliant
•
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
SKW15N120
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150°C
Diode forward current
T
C
= 25°C
T
C
= 100°C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
2
V
GE
= 15V, 100V≤
V
CC
≤1200V,
T
j
≤
150°C
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
T
j
,
T
stg
T
s
-55...+150
260
°C
P
tot
198
W
I
Fpuls
V
GE
t
SC
I
F
32
15
50
±20
10
V
µs
I
Cpuls
-
Symbol
V
CE
I
C
30
15
52
52
Value
1200
Unit
V
A
V
CE
1200V
I
C
15A
E
off
1.5mJ
T
j
150°C
Marking
K15N120
Package
PG-TO-247-3
C
G
E
PG-TO-247-3
1
2
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2_2
Sep 08
Power Semiconductors
SKW15N120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
=0 V,
I
C
=1 000
µA
V
CE(sat)
V
G E
= 15 V,
I
C
=15A
T
j
= 25°C
T
j
= 150
°C
Diode forward voltage
V
F
V
G E
=0 V,
I
F
= 1 5 A
T
j
= 25°C
T
j
= 150
°C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
=600
µA,V
C E
=V
G E
V
C E
=1200V,V
G E
=0V
T
j
= 25°C
T
j
= 150
°C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
I
C(SC)
V
G E
=15V,t
S C
≤1
0
µs
1 00 V≤
V
C C
≤1
200 V,
T
j
≤
150
°C
-
145
-
A
C
iss
C
oss
C
rss
Q
Gate
L
E
V
C E
=25V,
V
G E
=0 V,
f=1MHz
V
C C
= 96 0 V,
I
C
=15A
V
G E
=15V
-
13
-
nH
-
-
-
-
1250
155
65
130
1500
185
80
175
nC
pF
I
GES
g
fs
V
C E
=0V,V
G E
=20V
V
C E
=20V,
I
C
=15A
-
-
-
-
-
-
11
200
800
100
-
nA
S
-
3
2.0
1.75
4
5
µA
2.5
2.5
-
3.1
3.7
3.6
4.3
1200
-
-
V
Symbol
Conditions
Value
min.
typ.
max.
Unit
R
thJA
40
R
thJCD
1.5
R
thJC
0.63
K/W
Symbol
Conditions
Max. Value
Unit
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2_2
Sep 08
Power Semiconductors
SKW15N120
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
F
Q
rr
I
rrm
di
rr
/dt
T
j
= 25°C ,
V
R
= 80 0 V ,
I
F
=15A,
d i
F
/d t=
650A/µs
-
-
-
-
-
-
0.5
15
500
µC
A
A/µs
65
ns
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 25°C ,
V
C C
= 80 0 V,
I
C
=15A,
V
G E
=15V/0V,
R
G
= 3 3Ω ,
L
σ
=1 80nH,
C
σ
1 )
=40pF
Energy losses include
“tail” and diode
reverse recovery.
1)
Symbol
Conditions
Value
min.
-
-
-
-
-
-
-
typ.
18
23
580
22
1.1
0.8
1.9
max.
24
30
750
29
1.5
1.1
2.6
Unit
ns
mJ
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 150
°C
V
C C
= 80 0 V,
I
C
=15A,
V
G E
=15V/0V,
R
G
= 3 3Ω ,
L
σ
=1 80nH,
C
σ
1 )
=40pF
Energy losses include
“tail” and diode
reverse recovery.
T
j
= 150
°C
V
R
= 80 0 V ,
I
F
=15A,
d i
F
/d t=
650A/µs
1)
Symbol
Conditions
Value
min.
-
-
-
-
-
-
-
typ.
38
30
652
31
1.9
1.5
3.4
max.
46
36
780
37
2.3
2.0
4.3
Unit
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
F
1)
-
-
-
-
-
-
200
ns
Q
rr
I
rrm
di
rr
/dt
2.0
23
140
µC
A
A/µs
Leakage inductance L
σ
and stray capacity C
σ
due to dynamic test circuit in figure E.
Power Semiconductors
3
Rev. 2_2
Sep 08
SKW15N120
70A
60A
50A
40A
30A
20A
10A
0A
10Hz
T
C
=110°C
100A
t
p
=2
µ
s
15
µ
s
I
c
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
10A
50
µ
s
T
C
=80°C
200
µ
s
1A
1ms
I
c
DC
0.1A
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 33Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤
150°C)
35A
200W
30A
175W
150W
125W
100W
75W
50W
25W
0W
25°C
25A
20A
15A
10A
5A
0A
25°C
I
C
,
COLLECTOR CURRENT
P
tot
,
POWER DISSIPATION
50°C
75°C
100°C
125°C
50°C
75°C
100°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≤
15V,
T
j
≤
150°C)
Power Semiconductors
4
Rev. 2_2
Sep 08
SKW15N120
50A
50A
40A
40A
I
C
,
COLLECTOR CURRENT
30A
15V
13V
11V
9V
7V
I
C
,
COLLECTOR CURRENT
V
G E
=17V
V
G E
=17V
30A
15V
13V
11V
20A
9V
7V
10A
20A
10A
0A
0V
1V
2V
3V
4V
5V
6V
7V
0A
0V
1V
2V
3V
4V
5V
6V
7V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T
j
= 150°C)
V
CE(sat)
,
COLLECTOR
-
EMITTER SATURATION VOLTAGE
50A
6V
40A
5V
I
C
=30A
I
C
,
COLLECTOR CURRENT
4V
I
C
=15A
30A
T
J
=+150°C
20A
T
J
=+25°C
T
J
=-40°C
10A
3V
2V
I
C
=7.5A
1V
0A
3V
5V
7V
9V
11V
0V
-50°C
0°C
50°C
100°C
150°C
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V
CE
= 20V)
T
j
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
GE
= 15V)
Power Semiconductors
5
Rev. 2_2
Sep 08
MEMS传感器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
