PTMA210404FL
Confidential, Limited Internal Distribution
Dual Wideband RF LDMOS Power Amplifier
40 W, 1800 – 2200 MHz
Description
The PTMA210404FL integrates two wideband, 20-watt, 2-stage
LDMOS integrated amplifiers into an open-cavity, ceramic package.
It is designed for use in cellular amplifier applications in the 1800-
2200 MHz frequency band. Manufactured with Infineon's advanced
LDMOS process, this amplifier offers excellent thermal performance
and superior reliability.
PTMA210404FL
Package H-34248-12
Features
Broadband Performance of Each Side
V
DD
= 28 V, I
DQ1
= 60 mA, I
DQ2
= 120 mA
•
•
Designed for wide RF and modulation bandwidths
and low memory effects
Typical channel isolation = 26 dB
Typical single channel performance CW, 2018
MHz, 28 V
- Output power at P-1dB = 20 W
- Linear Gain = 30.5 dB
- Efficiency = 54%
Typical Doherty performance with six-carrier
TD-SCDMA signal, V
DD
= 28 V, I
DQ1A
= I
DQ1B
= 55
mA, I
DQ2B
= 110 mA, V
G2A
= 1.06 V, ƒ = 2018 MHz
- Average output power = 10 W
- Linear Gain = 27 dB
- Efficiency = 35%
- ACLR1 = –33 dBc
- ACLR2 = –34 dBc
35
0
•
Gain
30
25
-5
-10
-15
Return Loss (dB)
Gain (dB)
•
20
15
10
5
1800
Return Loss
Side A
Side B
1900
2000
2100
-20
-25
-30
2200
•
•
•
Frequency (MHz)
Capable of handling 10:1 VSWR @ 28 V, 50 W
(CW) output power
Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
High-performance, thermally-enhanced package,
Pb-free and RoHS compliant, with low-gold plating
RF Characteristics
Six-carrier TD-SCDMA Measurements in Doherty Circuit
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ1A
= I
DQ1B
= 55 mA, I
DQ2B
= 110 mA, V
GS2A
= 1.05 V, P
OUT
= 10 W average, ƒ = 2018 MHz, input PAR = 9.8 dB
@ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Alternate Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
Min
26
33
—
—
Typ
27
35
–33
–34
Max
—
—
–30
–31
Unit
dB
%
dBc
dBc
η
D
ACPR
Alt
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 04, 2009-06-16
PTMA210404FL
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
CW Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ1A
= I
DQ1B
= 55 mA, I
DQ2B
= 110 mA, V
GS2A
= 1.05 V, ƒ = 2018 MHz
Characteristic
Gain Flatness
Gain Compression
Conditions
1 W / 15 MHz
40 W
Symbol
∆G
—
Min
—
—
Typ
0.30
–0.4
Max
—
–1.0
Unit
dB
dB
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)1
R
DS(on)2
Min
65
—
—
—
—
2.0
—
Typ
—
—
—
3.6
0.6
2.4
—
Max
—
1.0
10.0
—
—
3.0
1.0
Unit
V
µA
µA
Ω
Ω
V
µA
Final Stage On-state Resistance
V
GS
= 10 V, V
DS
= 0.1 V
Operating Gate Voltage
Gate Leakage Current
V
DS
= 28 V, I
DQ1
= 50 mA,
I
DQ2
= 120 mA
V
GS
= 10 V, V
DS
= 0 V
V
GS
I
GSS
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Input Power for CW - each side
Total Device Dissipation
Stage 1
Above 25°C derate by
Stage 2
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C)
Stage 1
Stage 2
T
STG
R
θJC
R
θJC
P
D
Symbol
V
DSS
V
GS
T
J
P
IN
P
D
Value
65
–0.5 to +12
200
< 20
29
0.167
110
0.625
–40 to +150
6.0
1.6
Unit
V
V
°C
dBm
W
W/°C
W
W/°C
°C
°C/W
°C/W
*See Infineon distributor for future availability.
Data Sheet
2 of 13
Rev. 04, 2009-06-16
PTMA210404FL
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
PTMA210404FL V1
PTMA210404FL V1 R250
Package Outline
H-34248-12
H-34248-12
Flange Type
Earless flange
Earless flange
Shipping
Tray
Tape & Reel 250 pcs
Marking
PTMA210404FL
PTMA210404FL
Typical Performance
(data taken in a production test fixture)
Six-carrier TD-SCDMA Drive-up
Single Side: V
DD
= 28 V, I
DQ1
= 60 mA, I
DQ2
= 120 mA,
ƒ = 2017.5 MHz
-20
-25
35
30
CW Performance of Each Side
V
DD
= 28 V, I
DQ1
= 60 mA, I
DQ2
= 120 mA
32
31
60
Gain
50
40
30
-30
-35
-40
-45
33
25
20
15
10
30
29
Efficiency
28
27
30
32
34
36
38
2010 MHz
2018 MHz
2025 MHz
40
42
44
20
10
34
35
36
37
38
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 13
Rev. 04, 2009-06-16
Power Added Efficiency (%)
Efficiency (%)
ACPR (dBc)
Gain (dB)
Adj Low er
Adj Upper
Alt Low er
Alt Upper
Efficiency
PTMA210404FL
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Two-tone Performance at Various I
DQ1
Single Side, ƒ = 2018 MHz
V
DD
= 28 V, I
DQ1
= Varying, I
DQ2
= 120 mA
-30
Two-tone Performance at Various I
DQ2
Single Side, ƒ = 2018 MHz
V
DD
= 28 V, I
DQ1
= 60 mA, I
DQ2
= Varying
-30
3rd Order Intermodulation
Distortion (dBc)
-34
-36
-38
-40
-42
-44
55mA
60mA
65mA
70mA
3rd Order Intermodulation
Distortion (dBc)
-32
50mA
-35
-40
-45
-50
-55
-60
100mA
110mA
120mA
130mA
140mA
30 31 32 33 34 35 36 37 38 39 40
30 31 32 33 34 35 36 37 38 39 40
Average Output Power (dBm)
Average Output Power (dBm)
CW Sweep at P
-1dB
V
DD1
= V
DD2
= 28V, I
DQ1
= 50 mA, I
DQ2
= 120 mA
Two-carrier WCDMA Performance
V
DD1
= V
DD2
= 28 V, I
DQ1
= 60 mA, I
DQ2
= 260 mA
10 MHz Spacing, 8 dB PAR, ƒ = 2140 MHz
60
50
32
31
-15
40
3rd Order IMD
Gain (dB)
30
29
28
27
26
30 31 32 33 34 35 36 37 38 39 40 41 42 43
40
30
-25
-30
-35
-40
-45
-50
27 28 29 30 31 32 33 34 35 36 37 38 39 40
30
25
Efficiency
2110 MHz
2140 MHz
2170 MHz
IM3L
20
10
0
IM3U
ACPR
20
15
10
5
Output Power (dBm)
Average Output Power (dBm)
Data Sheet
4 of 13
Rev. 04, 2009-06-16
Drain Efficiency (%)
Gain
Drain Efficiency (%)
-20
Efficiency
35
PTMA210404FL
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
CW Performance
Doherty Circuit,
Carrier: V
DD
= 28 V, I
DQ1
= 55 mA, I
DQ2
= 120 mA
Peaking: V
DD
= 28 V, I
DQ1
= 55 mA, V
GS2
= 1.07 V
29
60
Broadband Performance
Doherty Circuit
Carrier: V
DD
= 28 V, I
DQ1
= 55 mA, I
DQ2
= 120 mA
Peak: V
DD
= 28 V, I
DQ1
= 55 mA, V
GS2
= 1.07 V
35
30
25
20
15
10
5
1800
-5
-10
-15
-20
Input Return Loss (dB)
Gain
28
Efficiency
50
40
30
Gain (dB)
27
26
25
24
32
Gain
Return Loss
-25
-30
-35
2200
2010 MHz
2018 MHz
2025 MHz
34
36
38
40
42
44
46
48
20
10
1900
2000
2100
Frequency (MHz)
Output Power (dBm)
Power Gain vs Frequency
Doherty Circuit, CW, 40W
Carrier: V
DD
= 28 V, I
DQ1
= 60 mA, I
DQ2
= 120 mA
Peaking: V
DD
= 28V, I
DQ1
= 60 mA, V
GS2
= 1.07 V
28
27
26
25
24
23
22
1800
55
29
CW at Various Drain Voltage
Doherty Circuit,
ƒ
= 2018 MHz
60
50
Power Added Efficiency (%)
Gain
50
45
40
28
Gain (dB)
Gain (dB)
27
26
25
24
32
Gain
40
30
24 V
28 V
32 V
20
10
Efficiency
35
30
25
2100
1850
1900
1950
2000
2050
34
36
38
40
42
44
46
48
Frequency (MHz)
Output Power (dBm)
Data Sheet
5 of 13
Rev. 04, 2009-06-16
Power Added Efficiency (%)
Efficiency
Power Added Efficiency (%)
Gain (dB)
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