PTFB211501E
PTFB211501F
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 2110 – 2170 MHz
Description
The PTFB211501E and PTFB211501F are thermally-enhanced,
150-watt, LDMOS FETs designed for cellular power amplifier
applications in the 2110 – 2170 frequency band. Features include
I/O matching, high gain, and thermally-enhanced ceramic open-cavity
packages with slotted and earless flanges.
PTFB211501E
Package H-36248-2
PTFB211501F
Package H-37248-2
Single-carrier WCDMA Drive Up
V
DD
= 30 V, I
DQ
= 1.20 A, ƒ = 2170 MHz
3GPP WCDMA, PAR = 8.5 dB, BW 3.84 MHz
-25
-30
60
50
Features
•
•
Broadband internal matching
Typical single-carrier WCDMA performance at
2170 MHz, 30 V, I
DQ
= 1.2 A, 3GPP signal, channel
bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01%
CCDF
- Average output power = 40 W
- Linear Gain = 18 dB
- Efficiency = 32%
- Adjacent channel power = –34 dBc
Typical CW performance, 2170 MHz, 30 V
- Output power at P–1dB = 150 W
- Efficiency = 55%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Capable of handling 10:1 VSWR @ 30 V,
150 W (CW) output power
Pb-Free and RoHS compliant
ACP (dBc)
-35
-40
-45
-50
-55
31
33
35
37
39
Efficiency
40
30
Drain Efficiency (%)
•
ACP Low
20
10
•
•
•
ACP Up
41
43
45
47
49
0
Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Measurements
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1.2 A, P
OUT
= 40 W AVG, ƒ = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.5 dB
@ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
17
27
—
Typ
18
32
–34
Max
—
—
–32
Unit
dB
%
dBc
η
D
IMD
All published data at T
CASE
= 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 02, 2009-11-19
PTFB211501E
PTFB211501F
RF Characteristics
(cont.)
Two-tone Measurement
(not subject to production test - verified by design / characterization in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1.2 A, P
OUT
= 140 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
—
—
—
Typ
18
40
–30
Max
—
—
—
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
1.6
—
Typ
—
—
—
0.08
2.1
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 1.2 A
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 150 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
θJC
Value
65
–6 to +10
200
–40 to +150
0.29
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB211501E V4
Package Outline
H-36248-2
Package Description
Slotted flange, single-ended
Slotted flange, single-ended
Earless flange, single-ended
Earless flange, single-ended
Shipping
Tray
Tape & Reel 250 pcs
Tray
Tape & Reel 250 pcs
PTFB211501E V4 R250 H-36248-2
PTFB211501F V4
PTFB211501F V4 R250
H-37248-2
H-37248-2
*See Infineon distributor for future availability.
Data Sheet
2 of 13
Rev. 02, 2009-11-19
PTFB211501E
PTFB211501F
Typical Performance
(data taken in production test fixture)
Single-carrier WCDMA, 3GPP Broadband
V
DD
= 30 V, I
DQ
= 1.20 A, P
OUT
= 40 W
50
-10
Two-tone Broadband
V
DD
= 30 V, I
DQ
= 1.20 A, P
OUT
= 63 W
55
-10
-15
IRL (dB) / ACP Up (dBc)
Gain / Efficiency (dB / %)
IRL
Gain / Efficiency (dB / %)
50
45
40
35
30
25
20
40
35
30
25
20
15
2080
-20
-25
Efficiency
IMD3
-20
-25
-30
-35
-40
Efficiency
-30
-35
ACP
Gain
-40
-45
2200
Gain
-45
2100
2120
2140
2160
2180
-50
15
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Frequency (MHz)
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 1.20 A,
ƒ
1
= 2170 MHz, ƒ
2
= 2169 MHz
19
50
40
-10
-20
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 1.20 A,
ƒ
1
= 2170 MHz, ƒ
2
= 2169 MHz
55
18
Efficiency
45
35
Efficiency (%)
Gain (dB)
17
20
16
10
0
40
42
44
46
48
50
52
54
IMD (dBc)
Gain
30
-30
-40
-50
-60
40
42
44
46
48
50
52
54
IMD3
25
15
5
Efficiency
15
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Data Sheet
3 of 13
Rev. 02, 2009-11-19
Efficiency (%)
Return Loss (dB), IMD (dBc)
45
-15
IRL
PTFB211501E
PTFB211501F
Typical Performance
(cont.)
Intermodulation Distortion
vs. Output Power
V
DD
= 30 V, I
DQ
= 1.20 A,
-20
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
ƒ
1
= 2170 MHz, ƒ
2
= 2169 MHz
Normalized Bias Voltage (V)
3rd Order
1.02
1.01
1
0.99
0.98
0.97
-20
-30
2A
4A
8A
10 A
12 A
14 A
16 A
5th
IMD (dBc)
-40
-50
7th
-60
40
45
50
55
0
20
40
60
80
100
Output Power, PEP (dBm)
Case Temperature (°C)
Broadband Circuit Impedance
ST
D
0.0
Z Source
Z Load
-
W
AV
E
LE
NGT
H
Z
0
= 50
Ω
0.1
G
S
ARD
LOA
D
-
HS
T
OW
E
NGT
VE
L
Z Load
0. 1
2080 MHz
<---
MHz
2200
2170
2140
2110
2080
R
4.29
4.36
4.45
4.55
4.67
jX
–8.14
–8.34
–8.53
–8.74
–8.95
R
1.49
1.52
1.55
1.58
1.62
jX
–4.39
–4.50
–4.61
–4.72
–4.84
WA
Frequency
Z Source
Ω
Z Load
Ω
2200 MHz
Z Source
0.
2
0. 3
Data Sheet
5 of 13
Rev. 02, 2009-11-19
0.2
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