Target Data 05/01
25MT060WF
"FULL-BRIDGE" IGBT MTP
Warp Speed IGBT
Features
• Gen. 4 Warp Speed IGBT Technology
• HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery
• Very Low Conduction and Switching Losses
• Optional SMT Thermystor Inside
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for
High Speed Operation
V
CES
= 600V
V
CE(on) typ.
= 2.2V @
V
GE
= 15V, I
C
= 25A
T
C
= 25°C
Benefits
• Optimized for Welding, UPS and SMPS Applications
• Operating Frequencies > 20 kHz Hard Switching,
>200 kHz Resonant Mode
• Low EMI, requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal Resistance
Absolute Maximum Ratings
Parameters
V
CES
I
C
I
CM
I
LM
I
F
Max
600
@ T
C
= 25°C
@ T
C
= 100°C
50
25
200
200
@ T
C
= 100°C
25
200
± 20
2500
900
400
@ T
C
= 25°C
@ T
C
= 100°C
Units
V
A
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
Peak Switching Current
Diode Continuous Forward Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation
I
FM
V
GE
V
ISOL
P
D
V
W
1
25MT060WF
Target Data 05/01
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
/
∆T
J
g
fe
I
CES
V
FM
I
GES
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
Gate Threshold Voltage
Temperature Coeff. of
Threshold Voltage
Forward Transconductance
Collector-to-Emiter Leaking Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
1.3
1.2
± 100
Min Typ Max Units Test Conditions
600
1.85
1.7
3
-
40
250
5000
6
V
GE
= 0V, I
C
= 250µA
V
GE
= 15V, I
C
= 25A
V
GE
= 15V, I
C
= 25A, T
J
= 150°C
I
C
= 250µA
mV/°C V
GE
= V
CE
, I
C
= 500µA
S
µA
V
nA
V
CE
= 100V, I
C
= 25A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
F
= 25A, V
GE
= 0V
I
F
= 25A, V
GE
= 0V, T
J
= 150°C
V
GE
= ± 20V
V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
Q
g
Q
ge
Q
gc
E
on
E
off(1)
E
ts(1)
C
ies
C
oes
C
res
trr
Irr
Qrr
di
(rec)
M/
dt
Total Gate Charge (turn-on)
Gate-Emitter Charge (turn-on)
Gate-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Current
Diode Recovery Charge
Diode PeakRate of Fall of Recovery
During t
b
Min Typ Max Units Test Conditions
180
25
63
950
320
1270
4000
260
68
50
4.5
112
250
nC
I
C
= 25A
V
CC
= 400V
V
GE
= 15V
R
g1
= R
g2
= 5Ω
,
I
C
= 25A
V
CC
= 480V
V
GE
= ±15V
V
GE
= 0V
V
CC
= 30V
f = 1.0 MHz
V
R
= 200V, I
C
= 25A
di/dt = 200A/µs
µJ
pF
ns
A
nC
A/µs
Thermal- Mechanical Specifications
Parameters
T
J
T
STG
R
thJC
R
thCS
Operating Junction Temperature Range
Storage Temperature Range
Junction-to-Case
Case-to-Sink
Weight
IGBT
Diode
Module
0.06
66
g
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Min
- 40
- 40
Typ
Max
150
125
0.7
0.9
Units
°C
°C/ W
2
25MT060WF
Target Data 05/01
Outline Table
Dimensions in millimeters
Data and specifications subject to change without notice.
This product has been designed for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 05/01
3
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