GS8662D20/38BD-550/500/450/400/350
GS8662D06/11BD-500/450/400/350
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• 2.5 Clock Latency
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 4 Read and Write
• On-Die Termination (ODT) on Data (D), Byte Write (BW),
and Clock (K, K) intputs
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• Data Valid Pin (QVLD) Support
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
72Mb SigmaQuad-II+
TM
Burst of 4 SRAM
550 MHz–350 MHz
1.8 V V
DD
1.8 V or 1.5 V I/O
SRAMs. The GS8662D06/11/20/38BD SigmaQuad SRAMs
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Clocking and Addressing Schemes
The GS8662D06/11/20/38BD SigmaQuad-II+ SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer.
Each internal read and write operation in a SigmaQuad-II+ B4
RAM is four times wider than the device I/O bus. An input
data bus de-multiplexer is used to accumulate incoming data
before it is simultaneously written to the memory array. An
output data multiplexer is used to capture the data produced
from a single memory array read and then route it to the
appropriate output drivers as needed. Therefore the address
field of a SigmaQuad-II+ B4 RAM is always two address pins
less than the advertised index depth (e.g., the 8M x 8 has a 2M
addressable index).
SigmaQuad-II™ Family Overview
The GS8662D06/11/20/38BD are built in compliance with
the SigmaQuad-II+ SRAM pinout standard for Separate I/O
synchronous SRAMs. They are 75,497,472-bit (72Mb)
Parameter Synopsis (x18/x36)
-550
tKHKH
tKHQV
1.81 ns
0.29ns
-500
2.0 ns
0.33 ns
-450
2.2 ns
0.37 ns
-400
2.5 ns
0.45 ns
-350
2.86 ns
0.45 ns
Parameter Synopsis (x8/x9)
-500
tKHKH
tKHQV
2.0 ns
0.33 ns
-450
2.2 ns
0.37ns
-400
2.5 ns
0.45 ns
-350
2.86 ns
0.45 ns
Rev: 1.02b 11/2011
1/33
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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