PD - 96170
SMPS IGBT
IRGP50B60PD1-EP
C
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
•
•
•
•
•
•
•
•
•
•
•
•
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
Lead-Free
NPT Technology, Positive Temperature Coefficient
Lower V
CE
(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
V
CES
= 600V
V
CE(on)
typ. = 2.00V
@ V
GE
= 15V I
C
= 33A
G
E
Features
n-channel
Equivalent MOSFET
Parameters
R
CE(on)
typ. = 61mΩ
I
D
(FET equivalent) = 50A
Benefits
•
Parallel Operation for Higher Current Applications
•
Lower Conduction Losses and Switching Losses
•
Higher Switching Frequency up to 150kHz
TO-247AD
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FRM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
Clamped Inductive Load Current
Max.
600
75
45
150
150
40
15
60
±20
390
156
-55 to +150
Units
V
d
A
Diode Continous Forward Current
Diode Continous Forward Current
Maximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
e
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6.0 (0.21)
Max.
0.32
1.7
–––
40
–––
Units
°C/W
g (oz)
08/06/08
1
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IRGP50B60PD1-EP
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
∆V
(BR)CES
/∆T
J
Min.
600
—
—
—
—
—
—
Typ.
—
0.31
1.7
2.00
2.45
2.60
3.20
4.0
-10
41
5.0
1.0
1.30
1.20
—
Max. Units
—
—
—
2.35
2.85
2.95
3.60
5.0
—
—
500
—
1.70
1.60
±100
nA
V
V
V
Ω
Conditions
V
GE
= 0V, I
C
= 500µA
1MHz, Open Collector
I
C
= 33A, V
GE
= 15V
I
C
= 50A, V
GE
= 15V
I
C
= 33A, V
GE
= 15V, T
J
= 125°C
I
C
= 50A, V
GE
= 15V, T
J
= 125°C
I
C
= 250µA
Ref.Fig
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
V/°C V
GE
= 0V, I
C
= 1mA (25°C-125°C)
4, 5,6,8,9
R
G
V
CE(on)
Internal Gate Resistance
Collector-to-Emitter Saturation Voltage
V
GE(th)
∆V
GE(th)
/∆TJ
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
3.0
—
—
—
—
—
—
—
7,8,9
gfe
I
CES
V
FM
I
GES
mV/°C V
CE
= V
GE
, I
C
= 1.0mA
S V
CE
= 50V, I
C
= 33A, PW = 80µs
µA
mA
V
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 125°C
I
F
= 15A, V
GE
= 0V
I
F
= 15A, V
GE
= 0V, T
J
= 125°C
V
GE
= ±20V, V
CE
= 0V
10
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Qg
Q
gc
Q
ge
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
C
oes
eff.
C
oes
eff. (ER)
RBSOA
t
rr
Q
rr
I
rr
Total Gate Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Time Related)
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
205
70
30
255
375
630
30
10
130
11
580
480
1060
26
13
146
15
3648
322
56
215
163
Max. Units
308
105
45
305
445
750
40
15
150
15
700
550
1250
35
20
165
20
—
—
—
—
—
pF
V
GE
= 0V
V
CC
= 30V
ns
µJ
ns
µJ
nC
I
C
= 33A
V
CC
= 400V
V
GE
= 15V
Conditions
Ref.Fig
17
CT1
I
C
= 33A, V
CC
= 390V
V
GE
= +15V, R
G
= 3.3Ω, L = 200µH
TJ = 25°C
CT3
fÃÃ
I
C
= 33A, V
CC
= 390V
V
GE
= +15V, R
G
= 3.3Ω, L = 200µH
T
J
= 25°C
CT3
fÃÃ
f
I
C
= 33A, V
CC
= 390V
V
GE
= +15V, R
G
= 3.3Ω, L = 200µH
T
J
= 125°C
I
C
= 33A, V
CC
= 390V
V
GE
= +15V, R
G
= 3.3Ω, L = 200µH
T
J
= 125°C
CT3
11,13
WF1,WF2
CT3
12,14
WF1,WF2
ÃfÃÃ
16
Effective Output Capacitance (Energy Related)
Reverse Bias Safe Operating Area
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Peak Reverse Recovery Current
g
g
—
—
f = 1Mhz
V
GE
= 0V, V
CE
= 0V to 480V
T
J
= 150°C, I
C
= 150A
15
3
CT2
FULL SQUARE
—
—
—
—
—
—
42
74
80
220
4.0
6.5
60
120
180
600
6.0
10
A
nC
ns
V
CC
= 480V, Vp =600V
Rg = 22Ω, V
GE
= +15V to 0V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 15A, V
R
= 200V,
di/dt = 200A/µs
I
F
= 15A, V
R
= 200V,
di/dt = 200A/µs
I
F
= 15A, V
R
= 200V,
di/dt = 200A/µs
19
21
19,20,21,22
CT5
Notes:
R
CE(on)
typ. = equivalent on-resistance = V
CE(on)
typ./ I
C
, where V
CE(on)
typ.= 2.00V and I
C
=33A. I
D
(FET Equivalent) is the equivalent MOSFET I
D
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 28 µH, R
G
= 22
Ω.
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
C
oes
eff. is a fixed capacitance that gives the same charging time as C
oes
while V
CE
is rising from 0 to 80% V
CES
.
C
oes
eff.(ER) is a fixed capacitance that stores the same energy as C
oes
while V
CE
is rising from 0 to 80% V
CES
.
2
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IRGP50B60PD1-EP
90
80
70
60
IC (A)
450
400
350
300
Ptot (W)
50
40
30
20
10
0
0
20
40
60
80
100 120 140 160
T C (°C)
250
200
150
100
50
0
0
20
40
60
80
100 120 140 160
T C (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 2
- Power Dissipation vs. Case
Temperature
200
180
160
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
100
140
ICE (A)
120
100
80
60
40
20
IC A)
10
1
10
100
1000
0
0
1
2
3
4
5
6
7
8
9
10
VCE (V)
VCE (V)
Fig. 3
- Reverse Bias SOA
T
J
= 150°C; V
GE
=15V
200
180
160
140
ICE (A)
200
Fig. 4
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
180
160
140
ICE (A)
120
100
80
60
40
20
0
0
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
120
100
80
60
40
20
0
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
VCE (V)
VCE (V)
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 125°C; tp = 80µs
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3
IRGP50B60PD1-EP
900
800
700
600
ICE (A)
10
T J = 25°C
T J = 125°C
9
8
7
VCE (V)
500
400
300
200
100
0
0
5
10
VGE (V)
15
20
TJ = 125°C
T J = 25°C
6
5
4
3
2
1
0
5
10
VGE (V)
ICE = 15A
ICE = 33A
ICE = 50A
15
20
Fig. 7
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
10
9
8
7
VCE (V)
I sa t n o sF r adCr e t -I ( )
n t n e u owr ur n
a
A
F
100
Fig. 8
- Typical V
CE
vs. V
GE
T
J
= 25°C
6
5
4
3
2
1
0
5
10
VGE (V)
ICE = 15A
ICE = 33A
ICE = 50A
10
T
J
= 150°C
T
J
= 125°C
T
J
=
25°C
15
20
1
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V
FM
(V)
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= 125°C
1200
1000
800
Energy (µJ)
Fig. 10
- Typ. Diode Forward Characteristics
tp = 80µs
1000
Swiching Time (ns)
EON
600
EOFF
400
200
0
0
10
20
30
IC (A)
40
50
60
td OFF
100
tF
tdON
tR
10
0
10
20
30
40
50
60
IC (A)
Fig. 11
- Typ. Energy Loss vs. I
C
T
J
= 125°C; L = 200µH; V
CE
= 390V, R
G
= 3.3Ω; V
GE
= 15V.
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 12
- Typ. Switching Time vs. I
C
T
J
= 125°C; L = 200µH; V
CE
= 390V, R
G
= 3.3Ω; V
GE
= 15V.
Diode clamp used: 30ETH06 (See C.T.3)
4
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IRGP50B60PD1-EP
1000
900
800
1000
Energy (µJ)
EON
700
600
500
400
300
0
5
10
15
20
25
Swiching Time (ns)
tdOFF
100
EOFF
td ON
tF
10
0
tR
5
10
15
20
25
RG (
Ω
)
RG (
Ω
)
Fig. 13
- Typ. Energy Loss vs. R
G
T
J
= 125°C; L = 200µH; V
CE
= 390V, I
CE
= 33A; V
GE
= 15V
Diode clamp used: 30ETH06 (See C.T.3)
40
Fig. 14
- Typ. Switching Time vs. R
G
T
J
= 125°C; L = 200µH; V
CE
= 390V, I
CE
= 33A; V
GE
= 15V
Diode clamp used: 30ETH06 (See C.T.3)
10000
Cies
30
Capacitance (pF)
1000
Eoes (µJ)
20
Coes
100
10
Cres
0
0
100
200
300
400
500
600
700
VCE (V)
10
0
20
40
60
80
100
VCE (V)
Fig. 15-
Typ. Output Capacitance
Stored Energy vs. V
CE
16
14
Normalized V CE(on) (V)
Fig. 16-
Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
1.4
12
10
VGE (V)
400V
1.2
8
6
4
2
0
0
50
100
150
200
250
Q G , Total Gate Charge (nC)
1.0
0.8
-50
0
50
100
150
200
T J (°C)
Fig. 17
- Typical Gate Charge vs. V
GE
I
CE
= 33A
Fig. 18
- Normalized Typ. V
CE(on)
vs. Junction Temperature
I
C
= 33A, V
GE
= 15V
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