SMPS IGBT
PD - 96169
IRGP35B60PD-EP
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Applications
•
•
•
•
•
•
•
•
•
•
•
•
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
Lead-Free
NPT Technology, Positive Temperature Coefficient
Lower V
CE
(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
V
CES
= 600V
V
CE(on)
typ. = 1.85V
@ V
GE
= 15V I
C
= 22A
G
E
Features
n-channel
Equivalent MOSFET
Parameters
R
CE(on)
typ. = 84mΩ
I
D
(FET equivalent) = 35A
Benefits
•
Parallel Operation for Higher Current Applications
•
Lower Conduction Losses and Switching Losses
•
Higher Switching Frequency up to 150KHz
TO-247AD
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FRM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
Clamped Inductive Load Current
Max.
600
60
34
120
120
40
15
60
±20
308
123
-55 to +150
Units
V
d
A
Diode Continous Forward Current
Diode Continous Forward Current
Maximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
e
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6.0 (0.21)
Max.
0.41
1.7
–––
40
–––
Units
°C/W
g (oz)
08/06/08
1
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IRGP35B60PD-EP
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
∆V
(BR)CES
/∆T
J
Min.
600
—
—
—
—
—
—
Typ.
—
0.78
1.7
1.85
2.25
2.37
3.00
4.0
-10
36
3.0
0.35
1.30
1.20
—
Max. Units
—
—
—
2.15
2.55
2.80
3.45
5.0
—
—
375
—
1.70
1.60
±100
nA
V
S
µA
mA
V
V
V
Ω
Conditions
V
GE
= 0V, I
C
= 500µA
1MHz, Open Collector
I
C
= 22A, V
GE
= 15V
I
C
= 35A, V
GE
= 15V
I
C
= 22A, V
GE
= 15V, T
J
= 125°C
I
C
= 35A, V
GE
= 15V, T
J
= 125°C
I
C
= 250µA
V
CE
= 50V, I
C
= 22A, PW = 80µs
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 125°C
I
F
= 15A, V
GE
= 0V
I
F
= 15A, V
GE
= 0V, T
J
= 125°C
V
GE
= ±20V, V
CE
= 0V
Ref.Fig
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
V/°C V
GE
= 0V, I
C
= 1mA (25°C-125°C)
4, 5,6,8,9
R
G
V
CE(on)
Internal Gate Resistance
Collector-to-Emitter Saturation Voltage
V
GE(th)
∆V
GE(th)
/∆TJ
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
3.0
—
—
—
—
—
—
—
7,8,9
mV/°C V
CE
= V
GE
, I
C
= 1.0mA
gfe
I
CES
V
FM
I
GES
10
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Qg
Q
gc
Q
ge
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
C
oes
eff.
C
oes
eff. (ER)
RBSOA
t
rr
Q
rr
I
rr
Total Gate Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Time Related)
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
160
55
21
220
215
435
26
6.0
110
8.0
410
330
740
26
8.0
130
12
3715
265
47
135
179
Max. Units
240
83
32
270
265
535
34
8.0
122
10
465
405
870
34
11
150
16
—
—
—
—
—
pF
V
GE
= 0V
V
CC
= 30V
f = 1Mhz
ns
µJ
ns
µJ
nC
I
C
= 22A
V
CC
= 400V
V
GE
= 15V
Conditions
Ref.Fig
17
CT1
I
C
= 22A, V
CC
= 390V
V
GE
= +15V, R
G
= 3.3Ω, L = 200µH
T
J
= 25°C
CT3
f
I
C
= 22A, V
CC
= 390V
V
GE
= +15V, R
G
= 3.3Ω, L = 200µH
T
J
= 25°C
CT3
fÃÃ
f
I
C
= 22A, V
CC
= 390V
V
GE
= +15V, R
G
= 3.3Ω, L = 200µH
T
J
= 125°C
I
C
= 22A, V
CC
= 390V
V
GE
= +15V, R
G
= 3.3Ω, L = 200µH
T
J
= 125°C
CT3
11,13
WF1,WF2
CT3
12,14
WF1,WF2
ÃfÃÃ
16
Effective Output Capacitance (Energy Related)
Reverse Bias Safe Operating Area
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Peak Reverse Recovery Current
g
g
—
—
V
GE
= 0V, V
CE
= 0V to 480V
T
J
= 150°C, I
C
= 120A
15
3
CT2
FULL SQUARE
—
—
—
—
—
—
42
74
80
220
4.0
6.5
60
120
180
600
6.0
10
A
nC
ns
V
CC
= 480V, Vp =600V
Rg = 22Ω, V
GE
= +15V to 0V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 15A, V
R
= 200V,
di/dt = 200A/µs
I
F
= 15A, V
R
= 200V,
di/dt = 200A/µs
I
F
= 15A, V
R
= 200V,
di/dt = 200A/µs
19
21
19,20,21,22
CT5
Notes:
R
CE(on)
typ. = equivalent on-resistance = V
CE(on)
typ./ I
C
, where V
CE(on)
typ.= 1.85V and I
C
=22A. I
D
(FET Equivalent) is the equivalent MOSFET I
D
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 28 µH, R
G
= 22
Ω.
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
C
oes
eff. is a fixed capacitance that gives the same charging time as C
oes
while V
CE
is rising from 0 to 80% V
CES
.
C
oes
eff.(ER) is a fixed capacitance that stores the same energy as C
oes
while V
CE
is rising from 0 to 80% V
CES
.
2
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IRGP35B60PD-EP
70
60
50
Ptot (W)
IC (A)
350
300
250
200
150
100
50
0
0
20
40
60
80
100 120 140 160
0
20
40
60
80
100 120 140 160
T C (°C)
T C (°C)
40
30
20
10
0
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 2
- Power Dissipation vs. Case
Temperature
70
60
50
ICE (A)
100
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
IC A)
40
30
20
10
10
1
10
100
1000
0
0
1
2
3
VCE (V)
4
5
VCE (V)
Fig. 3
- Reverse Bias SOA
T
J
= 150°C; V
GE
=15V
70
60
50
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
70
60
50
Fig. 4
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
ICE (A)
30
20
10
0
0
1
2
3
VCE (V)
4
5
ICE (A)
40
40
30
20
10
0
0
1
2
3
VCE (V)
4
5
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 125°C; tp = 80µs
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3
IRGP35B60PD-EP
800
700
600
500
VCE (V)
ICE (A)
10
T J = 25°C
T J = 125°C
9
8
7
6
5
4
TJ = 125°C
T J = 25°C
0
5
10
VGE (V)
15
20
3
2
1
0
5
10
VGE (V)
15
20
ICE = 11A
ICE = 22A
ICE = 35A
400
300
200
100
0
Fig. 7
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
10
9
I sa t n o sF r adCr e t -I ( )
n t n e u owr ur n
a
A
100
Fig. 8
- Typical V
CE
vs. V
GE
T
J
= 25°C
8
7
VCE (V)
6
5
4
3
2
1
0
5
10
VGE (V)
ICE = 11A
ICE = 22A
ICE = 35A
F
10
T
J
= 150°C
T
J
= 125°C
T
J
=
25°C
15
20
1
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V
FM
(V)
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= 125°C
800
700
600
Energy (µJ)
Fig. 10
- Typ. Diode Forward Characteristics
tp = 80µs
1000
Swiching Time (ns)
EON
500
400
300
200
100
0
0
5
10
15
20
IC (A)
25
30
35
40
EOFF
100
td OFF
tdON
10
tF
tR
1
0
10
20
30
40
IC (A)
Fig. 11
- Typ. Energy Loss vs. I
C
T
J
= 125°C; L = 200µH; V
CE
= 390V, R
G
= 3.3Ω; V
GE
= 15V.
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 12
- Typ. Switching Time vs. I
C
T
J
= 125°C; L = 200µH; V
CE
= 390V, R
G
= 3.3Ω; V
GE
= 15V.
Diode clamp used: 30ETH06 (See C.T.3)
4
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IRGP35B60PD-EP
800
700
600
1000
tdOFF
Swiching Time (ns)
EON
Energy (µJ)
500
400
300
200
100
0
0
10
20
30
40
50
100
tdON
tF
tR
EOFF
10
1
0
10
20
30
40
50
RG (
Ω
)
RG (
Ω
)
Fig. 13
- Typ. Energy Loss vs. R
G
T
J
= 125°C; L = 200µH; V
CE
= 390V, I
CE
= 22A; V
GE
= 15V
Diode clamp used: 30ETH06 (See C.T.3)
30
25
Fig. 14
- Typ. Switching Time vs. R
G
T
J
= 125°C; L = 200µH; V
CE
= 390V, I
CE
= 22A; V
GE
= 15V
Diode clamp used: 30ETH06 (See C.T.3)
10000
Cies
Capacitance (pF)
20
Eoes (µJ)
1000
15
10
5
0
0
100
200
300
400
500
600
700
VCE (V)
Coes
100
Cres
10
0
20
40
60
80
100
VCE (V)
Fig. 15-
Typ. Output Capacitance
Stored Energy vs. V
CE
16
14
Normalized V CE(on) (V)
Fig. 16-
Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
1.4
12
10
VGE (V)
400V
1.2
8
6
4
2
0
0
50
100
150
200
Q G , Total Gate Charge (nC)
1.0
0.8
-50
0
50
100
150
200
T J (°C)
Fig. 17
- Typical Gate Charge vs. V
GE
I
CE
= 22A
Fig. 18
- Normalized Typ. V
CE(on)
vs. Junction Temperature
I
C
= 22A, V
GE
= 15V
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