PD - 96305
INSULATED GATE BIPOLAR TRANSISTOR
Features
•
•
•
•
•
•
•
•
Low V
CE (ON)
trench IGBT technology
Low switching losses
Maximum junction temperature 175 °C
Square RBSOA
100% of the parts tested for I
LM
Positive V
CE (ON)
temperature co-efficient
Tight parameter distribution
Lead -Free
C
IRG7PH46UPbF
IRG7PH46U-EP
V
CES
= 1200V
I
C
= 75A, T
C
= 100°C
G
E
T
J(max)
=175°C
n-channel
V
CE(on)
typ. = 1.7V
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low V
CE (ON)
and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
C
C
GC
E
Applications
•
•
•
•
U.P.S
Welding
Solar inverter
Induction heating
TO-247AC
IRG7PH46UPbF
E
GC
TO-247AD
IRG7PH46U-EP
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
NOMINAL
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current (Silicon Limited)
Nominal Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Max.
1200
130
75
40
Units
V
g
A
c
120
160
±30
469
234
-55 to +175
°C
V
W
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θCS
R
θJA
Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC
Thermal Resistance, Case-to-Sink (flat, greased surface)
f
f
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.32
–––
–––
Units
°C/W
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
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04/20/10
IRG7PH46UPbF/IRG7PH46U-EP
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
∆V
(BR)CES
/∆T
J
Min.
1200
—
—
—
—
3.0
—
—
—
—
—
Typ.
—
1.2
1.7
2.0
2.1
—
-15
60
1
1170
—
Max. Units
—
—
2.0
—
—
6.0
—
—
100
—
±200
V
V
Conditions
V
GE
= 0V, I
C
= 100µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
e
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
I
C
= 40A, V
GE
= 15V, T
J
= 25°C
V
I
C
= 40A, V
GE
= 15V, T
J
I
C
= 40A, V
GE
= 15V, T
J
V
CE
= V
GE
, I
C
= 1.6mA
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆TJ
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
d
= 150°C
d
= 175°C
d
e
gfe
I
CES
I
GES
mV/°C V
CE
= V
GE
, I
C
= 1.6mA (25°C - 175°C)
S V
CE
= 50V, I
C
= 40A, PW = 20µs
µA
nA
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 175°C
V
GE
= ±30V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
220
30
85
2560
1780
4340
45
40
410
45
3950
3020
6970
40
40
480
220
4820
150
110
Max. Units
320
50
130
3460
2660
6120
65
55
445
65
—
—
—
—
—
—
—
—
—
—
pF
ns
µJ
ns
µJ
nC
I
C
= 40A
d
Conditions
V
GE
= 15V
V
CC
= 600V
I
C
= 40A, V
CC
= 600V, V
GE
= 15V
R
G
= 10Ω, L = 200µH,T
J
= 25°C
d
Energy losses include tail & diode reverse recovery
Diode clamp the same as IRG7PH46UDPbF
I
C
= 40A, V
CC
= 600V, V
GE
=15V
R
G
=10Ω, L=200µH, T
J
= 175°C
Ãd
Energy losses include tail & diode reverse recovery
Diode clamp the same as IRG7PH46UDPbF
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
I
C
= 160A
V
CC
= 960V, Vp =1200V
Rg = 10Ω, V
GE
= +20V to 0V, T
J
=175°C
FULL SQUARE
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 25µH, R
G
= 50Ω
Pulse width
≤
400µs; duty cycle
≤
2%.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 117A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
2
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IRG7PH46UPbF/IRG7PH46U-EP
100
For both:
Duty cycle : 50%
Tj = 150°C
Tc = 100°C
Vcc = 600V
Gate drive as specified
Power Dissipation = 154W
Square Wave:
V
CC
80
Load Current ( A )
60
40
I
20
Diode as specified
0
0.1
1
f , Frequency ( kHz )
10
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
140
120
100
80
60
40
20
0
25
50
75
100
T C (°C)
125
150
175
Ptot (W)
500
450
400
350
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160 180
T C (°C)
IC (A)
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 3
- Power Dissipation vs. Case
Temperature
1000
100
10µsec
100µsec
100
IC (A)
IC (A)
10
1msec
DC
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
VCE (V)
1000
10000
1
10
100
VCE (V)
1000
10000
Fig. 4
- Forward SOA
T
C
= 25°C, T
J
≤
175°C; V
GE
=15V
Fig. 5
- Reverse Bias SOA
T
J
= 175°C; V
GE
=20V
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3
IRG7PH46UPbF/IRG7PH46U-EP
160
140
120
100
ICE (A)
160
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
140
120
100
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
80
60
40
20
0
0
2
4
6
8
10
VCE (V)
80
60
40
20
0
0
2
4
6
8
10
VCE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp =20µs
160
140
120
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
12
10
8
VCE (V)
ICE (A)
80
60
40
20
0
0
2
4
6
8
10
VCE (V)
6
4
2
0
4
8
12
ICE = 20A
ICE = 40A
ICE = 80A
16
20
VGE (V)
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 20µs
12
10
8
VCE (V)
VCE (V)
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
12
10
8
6
4
2
0
4
8
12
ICE = 20A
ICE = 40A
ICE = 80A
6
4
2
0
ICE = 20A
ICE = 40A
ICE = 80A
16
20
4
8
12
VGE (V)
16
20
VGE (V)
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
4
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IRG7PH46UPbF/IRG7PH46U-EP
160
9200
8200
T J = 25°C
ICE, Collector-to-Emitter Current (A)
140
120
100
80
60
40
20
0
3
4
5
6
7
8
9
VGE, Gate-to-Emitter Voltage (V)
T J = 175°C
7200
6200
Energy (µJ)
5200
4200
3200
2200
1200
200
0
10
20
30
EON
EOFF
40
IC (A)
50
60
70
80
Fig. 12-
Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
1000
tdOFF
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 600V, R
G
= 10Ω; V
GE
= 15V
10000
8000
Swiching Time (ns)
Energy (µJ)
tF
100
td ON
EOFF
6000
EON
4000
tR
10
0
10
20
30
40
IC (A)
50
60
70
80
2000
0
25
50
Rg (Ω)
75
100
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 600V, R
G
= 10Ω; V
GE
= 15V
10000
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 600V, I
CE
= 40A; V
GE
= 15V
Swiching Time (ns)
1000
tdOFF
tF
100
tR
tdON
10
0
20
40
60
80
100
RG (Ω)
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 600V, I
CE
= 40A; V
GE
= 15V
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