PD - 96233A
INSULATED GATE BIPOLAR TRANSISTOR
Features
•
•
•
•
•
•
•
•
Low V
CE (ON)
trench IGBT technology
Low switching losses
Maximum junction temperature 175 °C
Square RBSOA
100% of the parts tested for I
LM
Positive V
CE (ON)
temperature co-efficient
Tight parameter distribution
Lead -Free
C
IRG7PH42UPbF
IRG7PH42U-EP
V
CES
= 1200V
I
C
= 60A, T
C
= 100°C
G
E
T
J(max)
=175°C
n-channel
V
CE(on)
typ. = 1.7V
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low V
CE (ON)
and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
C
C
GC
E
Applications
•
•
•
•
U.P.S
Welding
Solar inverter
Induction heating
TO-247AC
IRG7PH42UPbF
E
GC
TO-247AD
IRG7PH42U-EP
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
NOMINAL
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current (Silicon Limited)
Nominal Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Max.
1200
90
60
30
Units
V
g
A
c
90
120
±30
385
192
-55 to +175
°C
V
W
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θCS
R
θJA
Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC
Thermal Resistance, Case-to-Sink (flat, greased surface)
f
f
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.39
–––
–––
Units
°C/W
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
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02/18/10
IRG7PH42UPbF/IRG7PH42U-EP
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
∆V
(BR)CES
/∆T
J
Min.
1200
—
—
—
—
3.0
—
—
—
—
—
Typ.
—
1.2
1.7
2.1
2.2
—
-16
32
1
700
—
Max. Units
—
—
2.0
—
—
6.0
—
—
150
—
±100
V
V
Conditions
V
GE
= 0V, I
C
= 100µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
e
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
I
C
= 30A, V
GE
= 15V, T
J
= 25°C
V
I
C
= 30A, V
GE
= 15V, T
J
I
C
= 30A, V
GE
= 15V, T
J
V
CE
= V
GE
, I
C
= 1mA
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆TJ
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
d
= 150°C
d
= 175°C
d
e
gfe
I
CES
I
GES
mV/°C V
CE
= V
GE
, I
C
= 1mA (25°C - 175°C)
S V
CE
= 50V, I
C
= 30A, PW = 80µs
µA
nA
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 175°C
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
157
21
69
2105
1182
3287
25
32
229
63
3186
2153
5339
20
31
310
162
3338
124
75
Max. Units
236
32
104
2374
1424
3798
34
41
271
86
—
—
—
—
—
—
—
—
—
—
pF
ns
µJ
ns
µJ
nC
I
C
= 30A
d
Conditions
V
GE
= 15V
V
CC
= 600V
I
C
= 30A, V
CC
= 600V, V
GE
= 15V
R
G
= 10Ω, L = 200µH,T
J
= 25°C
d
Energy losses include tail & diode reverse recovery
Diode clamp the same as IRG7PH42UDPbF
I
C
= 30A, V
CC
= 600V, V
GE
=15V
R
G
=10Ω, L=200µH, T
J
= 175°C
Ãd
Energy losses include tail & diode reverse recovery
Diode clamp the same as IRG7PH42UDPbF
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
I
C
= 120A
V
CC
= 960V, Vp =1200V
Rg = 10Ω, V
GE
= +20V to 0V, T
J
=175°C
FULL SQUARE
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 22µH, R
G
= 10Ω
Pulse width
≤
400µs; duty cycle
≤
2%.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 78A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
2
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IRG7PH42UPbF/IRG7PH42U-EP
60
50
Load Current ( A )
40
30
Square wave:
60% of rated
voltage
I
For both:
Duty cycle : 50%
Tj = 150°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 95W
20
10
0
0.1
Ideal diodes
1
f , Frequency ( kHz )
10
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
400
350
80
300
250
Ptot (W)
60
IC (A)
200
150
100
40
20
50
0
0
25
50
75
100
T C (°C)
125
150
175
0
20
40
60
80 100 120 140 160 180
T C (°C)
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 3
- Power Dissipation vs. Case
Temperature
1000
100
10µsec
100
IC (A)
IC (A)
100µsec
10
1msec
DC
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
VCE (V)
1000
10000
1
10
100
VCE (V)
1000
10000
Fig. 4
- Forward SOA
T
C
= 25°C, T
J
≤
175°C; V
GE
=15V
Fig. 5
- Reverse Bias SOA
T
J
= 175°C; V
GE
=20V
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IRG7PH42UPbF/IRG7PH42U-EP
120
100
80
60
40
20
0
0
2
4
6
8
10
VCE (V)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
ICE (A)
120
100
80
60
40
20
0
0
2
4
6
8
10
VCE (V)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp =20µs
120
100
80
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
12
10
8
VCE (V)
ICE (A)
ICE = 15A
6
4
2
0
4
8
12
VGE (V)
16
60
40
20
0
0
2
4
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE = 30A
ICE = 60A
6
8
10
VCE (V)
20
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 20µs
12
10
8
VCE (V)
12
10
8
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
6
4
2
0
4
8
12
VGE (V)
ICE = 30A
ICE = 60A
VCE (V)
ICE = 15A
ICE = 15A
6
4
2
0
4
8
12
VGE (V)
16
ICE = 30A
ICE = 60A
16
20
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
4
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IRG7PH42UPbF/IRG7PH42U-EP
120
ICE, Collector-to-Emitter Current (A)
7000
6000
TJ = 25°C
100
80
60
40
20
0
4
6
8
10
12
VGE, Gate-to-Emitter Voltage (V)
5000
Energy (µJ)
T J = 175°C
4000
3000
2000
1000
0
0
10
20
EON
EOFF
30
IC (A)
40
50
60
Fig. 12-
Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
1000
tdOFF
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 600V, R
G
= 10Ω; V
GE
= 15V
6000
5500
5000
Swiching Time (ns)
100
tR
10
tdON
Energy (µJ)
tF
4500
4000
3500
3000
2500
2000
1500
EON
EOFF
1
0
10
20
30
IC (A)
40
50
60
1000
0
25
50
Rg (Ω)
75
100
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 600V, R
G
= 10Ω; V
GE
= 15V
10000
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 600V, I
CE
= 30A; V
GE
= 15V
Swiching Time (ns)
1000
tdOFF
100
tF
tR
tdON
0
20
40
60
80
100
10
RG (Ω)
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 600V, I
CE
= 30A; V
GE
= 15V
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