PD -
97480
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
IRG7PH42UD1PbF
IRG7PH42UD1-EP
V
CES
= 1200V
I
NOMINAL
= 30A
Features
•
•
•
•
•
•
•
•
•
Low V
CE (ON)
trench IGBT technology
Low switching losses
Square RBSOA
Ultra-low V
F
Diode
1300Vpk repetitive transient capacity
100% of the parts tested for I
LM
Positive V
CE (ON)
temperature co-efficient
Tight parameter distribution
Lead free package
C
G
E
T
J(max)
= 150°C
n-channel
C
V
CE(on)
typ. = 1.7V
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low V
CE(on)
, low switching losses
and Ultra-low V
F
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
• Low EMI
C
GC
E
TO-247AC
IRG7PH42UD1PbF
E
GC
TO-247AD
IRG7PH42UD1-EP
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
NOMINAL
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FRM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, V
GE
=15V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Repetitive Peak Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Max.
1200
85
45
30
Units
V
g
h
d
Clamped Inductive Load Current, V
GE
=20V
c
90
120
70
35
120
±30
313
125
-55 to +150
A
V
W
°C
Thermal Resistance
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
f
Thermal Resistance Junction-to-Case-(each Diode)
f
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.4
1.05
–––
–––
Units
°C/W
1
www.irf.com
3/26/10
IRG7PH42UD1PbF/IRG7PH42UD1-EP
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
V
CES(Transient)
ΔV
(BR)CES
/ΔT
J
Min.
1200
—
—
—
—
3.0
—
—
—
—
—
—
Typ.
—
—
1.2
1.7
2.0
—
32
1.0
230
1.15
1.10
—
Max. Units
—
1300
—
2.0
—
6.0
—
100
—
1.30
—
±100
Conditions
Collector-to-Emitter Breakdown Voltage
Repetitive Transient Collector-to-Emitter Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
V
CE(on)
V
GE(th)
gfe
I
CES
V
FM
I
GES
V V
GE
= 0V, I
C
= 100μA
V V
GE
= 0V, T
J
=75°C, PW
≤
10μs
V/°C V
GE
= 0V, I
C
= 2.0mA (25°C-150°C)
I
C
= 30A, V
GE
= 15V, T
J
= 25°C
V
I
C
= 30A, V
GE
= 15V, T
J
= 150°C
V V
CE
= V
GE
, I
C
= 1.0mA
S V
CE
= 50V, I
C
= 30A, PW = 80μs
V
GE
= 0V, V
CE
= 1200V
μA
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
I
F
= 30A
V
I
F
= 30A, T
J
= 150°C
nA V
GE
= ±30V
e
e
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
off
t
d(off)
t
f
E
off
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-Off Switching Loss
Turn-Off delay time
Fall time
Turn-Off Switching Loss
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Min.
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
180
24
70
1210
270
35
1936
300
160
3390
130
83
Max. Units
270
36
110
1450
290
43
—
—
—
—
—
—
nC
Conditions
I
C
= 30A
V
GE
= 15V
V
CC
= 600V
I
C
= 30A, V
CC
= 600V, V
GE
= 15V
R
G
= 10Ω, L = 200μH,T
J
= 25°C
Energy losses include tail
μJ
ns
μJ
ns
I
C
= 30A, V
CC
= 600V, V
GE
= 15V
R
G
= 10Ω, L = 200μH,T
J
= 25°C
I
C
= 30A, V
CC
= 600V, V
GE
= 15V
R
G
= 10Ω, L = 200μH,T
J
= 150°C
Energy losses include tail
pF
FULL SQUARE
I
C
= 30A, V
CC
= 600V, V
GE
= 15V
R
G
= 10Ω, L = 200μH, T
J
= 150°C
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 150°C, I
C
= 120A
V
CC
= 960V, Vp =1200V
Rg = 10Ω, V
GE
= +20V to 0V
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 22μH, R
G
= 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current
limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Rating for Hard Switching conditions. Rating is higher in Soft Switching conditions.
2
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IRG7PH42UD1PbF/IRG7PH42UD1-EP
100
LIMITED BY PACKAGE
350
300
IC, Collector Current (A)
80
250
Ptot (W)
25
50
75
100
125
150
60
200
150
100
40
20
50
0
TC, Case Temperature (°C)
0
25
50
75
100
125
150
TC (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
V GE(th), Gate Threshold Voltage (Normalized)
Fig. 2
- Power Dissipation vs. Case
Temperature
1000
1.0
IC = 1.0mA
0.9
100
0.8
IC (A)
10
1
0.7
0.6
0.5
25
50
75
100
125
150
TJ , Temperature (°C)
10
100
VCE (V)
1000
10000
Fig. 3
- Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
120
100
80
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
ICE (A)
Fig. 4
- Reverse Bias SOA
T
J
= 150°C; V
GE
= 20V
120
V GE = 18V
100
80
60
40
20
0
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
ICE (A)
60
40
20
0
0
2
4
6
V GE = 8.0V
8
10
0
2
4
6
8
10
V CE (V)
V CE (V)
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80μs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80μs
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IRG7PH42UD1PbF/IRG7PH42UD1-EP
120
100
80
VGE = 18V
VGE = 15V
140
120
100
25°C
150°C
VGE = 12V
VGE = 10V
VGE = 8.0V
IF (A)
ICE (A)
80
60
40
20
0
60
40
20
0
0
2
4
6
8
10
0.0
0.5
1.0
VF (V)
1.5
2.0
V CE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 80μs
20
18
16
14
VCE (V)
VCE (V)
Fig. 8
- Typ. Diode Forward Voltage Drop
Characteristics
20
18
16
14
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 15A
ICE = 30A
ICE = 60A
12
10
8
6
4
2
0
5
10
ICE = 15A
ICE = 30A
ICE = 60A
15
20
15
VGE (V)
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
20
ICE, Collector-to-Emitter Current (A)
120
100
80
60
40
20
0
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
18
16
14
VCE (V)
12
10
8
6
4
2
0
5
10
V GE (V)
15
20
ICE = 15A
ICE = 30A
ICE = 60A
TJ = 25°C
TJ = 150°C
2
4
6
8
10
VGE, Gate-to-Emitter Voltage (V)
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 150°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
4
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IRG7PH42UD1PbF/IRG7PH42UD1-EP
5000
1000
4000
Swiching Time (ns)
EOFF
Energy (μJ)
3000
tdOFF
2000
1000
100
tF
0
0
10
20
30
40
50
60
70
I C (A)
0
10
20
30
40
50
60
70
IC (A)
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 150°C; L = 200μH; V
CE
= 600V, R
G
= 10Ω; V
GE
= 15V
6500
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 150°C; L = 200μH; V
CE
= 600V, R
G
= 10Ω; V
GE
= 15V
10000
5500
tdOFF
Swiching Time (ns)
1000
Energy (μJ)
4500
EOFF
3500
100
tF
2500
1500
0
25
50
75
100
125
RG (Ω)
10
0
20
40
60
RG (Ω)
80
100
120
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 150°C; L = 200μH; V
CE
= 600V, I
CE
= 30A; V
GE
= 15V
10000
Cies
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 150°C; L = 200μH; V
CE
= 600V, I
CE
= 30A; V
GE
= 15V
16
14
12
10
8
6
4
2
0
V CES =600V
V CES = 400V
Capacitance (pF)
1000
100
Coes
Cres
10
0
20
40
60
80
100
VCE (V)
VGE, Gate-to-Emitter Voltage (V)
0
50
100
150
200
Q G, Total Gate Charge (nC)
Fig. 17
- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 18
- Typical Gate Charge vs. V
GE
I
CE
= 30A; L = 680μH
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