PD - 97403
IRG7PH30K10DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
•
Low V
CE (ON)
Trench IGBT Technology
Low switching losses
10 µS short circuit SOA
Square RBSOA
100% of the parts tested for I
LM
Positive V
CE (ON)
Temperature co-efficient
Ultra fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
C
V
CES
= 1200V
I
C
= 16A, T
C
= 100°C
G
E
t
SC
≥
10µs, T
J(max)
= 150°C
n-channel
C
V
CE(on)
typ. = 2.05V
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low V
CE (ON)
and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
E
C
G
TO-247AC
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
NOMINAL
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, Vge = 15V
Clamped Inductive Load Current, Vge = 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Max.
1200
30
16
9.0
27
36
30
16
36
±30
180
71
-55 to +150
Units
V
c
A
d
Continuous Gate-to-Emitter Voltage
V
W
°C
Thermal Resistance
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
f
Thermal Resistance Junction-to-Case-(each Diode)
f
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.70
1.44
–––
–––
Units
°C/W
1
www.irf.com
08/14/09
IRG7PH30K10DPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
∆V
(BR)CES
/∆T
J
Min.
1200
—
—
—
5.0
—
—
—
—
—
—
—
Typ.
—
1.11
2.05
2.56
—
-15
6.2
1.0
400
2.0
2.1
—
Max. Units
—
—
2.35
—
7.5
—
—
25
—
3.0
—
±100
nA
V
V
Conditions
V
GE
= 0V, I
C
= 250µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
e
Ref.Fig
CT6
CT6
5,6,7
9,10,11
9,10
11,12
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆TJ
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
I
C
= 9.0A, V
GE
= 15V, T
J
= 25°C
V
V
I
C
= 9.0A, V
GE
= 15V, T
J
= 150°C
V
CE
= V
GE
, I
C
= 400µA
gfe
I
CES
V
FM
I
GES
mV/°C V
CE
= V
GE
, I
C
= 400µA (25°C - 150°C)
S V
CE
= 50V, I
C
= 9.0A, PW = 80µs
µA
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
I
F
= 9.0A
I
F
= 9.0A, T
J
= 150°C
V
GE
= ±30V
8
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
45
8.7
20
530
380
910
14
24
110
38
810
680
1490
11
23
130
260
1070
63
26
Max. Units
68
13
30
760
600
1360
31
41
130
56
—
—
—
—
—
—
—
—
—
—
pF
V
GE
= 0V
V
CC
= 30V
ns
µJ
ns
µJ
nC
I
C
= 9.0A
V
GE
= 15V
V
CC
= 600V
Conditions
Ref.Fig
24
CT1
I
C
= 9.0A, V
CC
= 600V, V
GE
= 15V
R
G
= 22Ω, L = 1.0mH, L
S
= 150nH, T
J
= 25°C
Energy losses include tail & diode reverse recovery
CT4
I
C
= 9.0A, V
CC
= 600V, V
GE
= 15V
R
G
= 22Ω, L = 1.0mH, L
S
= 150nH, T
J
= 25°C
CT4
I
C
= 9.0A, V
CC
= 600V, V
GE
=15V
R
G
=22Ω, L=1.0mH, L
S
=150nH, T
J
= 150°C
I
C
= 9.0A, V
CC
= 600V, V
GE
= 15V
R
G
= 22Ω, L = 1.0mH, L
S
= 150nH
T
J
= 150°C
eÃ
13,15
CT4
WF1, WF2
14,16
CT4
WF1
WF2
23
Energy losses include tail & diode reverse recovery
f = 1.0Mhz
T
J
= 150°C, I
C
= 36A
V
CC
= 960V, Vp =1200V
Rg = 22Ω, V
GE
= +20V to 0V
4
CT2
FULL SQUARE
10
—
—
—
—
710
140
12
—
—
—
—
µs
µJ
ns
A
T
J
= 150°C, V
CC
= 600V, Vp =1200V
Rg = 22Ω, V
GE
= +15V to 0V
T
J
= 150°C
V
CC
= 600V, I
F
= 9.0A
V
GE
= 15V, Rg = 20Ω, L =1.0mH, L
s
= 150nH
22, CT3
WF4
17,18,19
20,21
WF3
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 36µH, R
G
= 33Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
2
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IRG7PH30K10DPbF
30
25
200
150
20
15
10
5
0
25
50
75
100
125
150
Ptot (W)
IC (A)
100
50
0
0
20
40
60
80
100 120 140 160
T C (°C)
T C (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
100
Fig. 2
- Power Dissipation vs. Case
Temperature
100
10µsec
10
100µsec
IC (A)
IC (A)
1000
10000
1msec
10
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
DC
1
100
VCE (V)
10
100
VCE (V)
1000
10000
Fig. 3
- Forward SOA
T
C
= 25°C, T
J
≤
150°C; V
GE
=15V
50
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
50
Fig. 4
- Reverse Bias SOA
T
J
= 150°C; V
GE
= 20V
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
40
40
ICE (A)
ICE (A)
30
30
20
20
10
10
0
0
2
4
6
8
10
VCE (V)
0
0
2
4
6
8
10
VCE (V)
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
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3
IRG7PH30K10DPbF
50
50
40
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
40
-40°C
25°C
150°C
ICE (A)
30
30
20
IF (A)
20
10
0
10
0.0
10
0
0
2
4
6
8
VCE (V)
1.0
2.0
3.0
4.0
5.0
VF (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 80µs
12
10
8
VCE (V)
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80µs
12
10
8
VCE (V)
6
4
2
0
5
10
VGE (V)
ICE = 4.5A
ICE = 9.0A
ICE = 18A
6
4
2
0
ICE = 4.5A
ICE = 9.0A
ICE = 18A
15
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
12
10
8
VCE (V)
ICE, Collector-to-Emitter Current (A)
40
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
30
6
4
2
0
5
10
VGE (V)
ICE = 4.5A
ICE = 9.0A
ICE = 18A
20
T J = 150°C
10
T J = 25°C
0
15
20
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 150°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V
4
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IRG7PH30K10DPbF
2000
1000
tF
Swiching Time (ns)
1600
EON
Energy (µJ)
100
tdOFF
1200
800
EOFF
400
tR
10
tdON
0
5
10
IC (A)
15
20
1
0
5
10
IC (A)
15
20
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 150°C; L = 1.0mH; V
CE
= 600V, R
G
= 22Ω; V
GE
= 15V
1600
1400
EON
1200
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 150°C; L = 1.0mH; V
CE
= 600V, R
G
= 22Ω; V
GE
= 15V
1000
tF
Swiching Time (ns)
100
Energy (µJ)
td OFF
tR
1000
800
600
400
0
20
40
60
80
100
RG (Ω)
EOFF
10
tdON
1
0
20
40
60
80
100
RG (Ω)
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 150°C; L = 1.0mH; V
CE
= 600V, I
CE
= 9.0A; V
GE
= 15V
18
16
14
RG =
5.0Ω
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 150°C; L = 1.0mH; V
CE
= 600V, I
CE
= 9.0A; V
GE
= 15V
18
16
RG =
10Ω
IRR (A)
12
RG =
20Ω
10
8
6
4
6
8
10
12
IF (A)
14
16
18
20
RG =
47Ω
IRR (A)
14
12
10
8
0
10
20
30
40
50
RG (Ω)
Fig. 17
- Typ. Diode I
RR
vs. I
F
T
J
= 150°C
Fig. 18
- Typ. Diode I
RR
vs. R
G
T
J
= 150°C
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