SMBT3906...MMBT3906
PNP Silicon Switching Transistors
•
High DC current gain: 0.1 mA to 100 mA
•
Low collector-emitter saturation voltage
•
For SMBT3906S and SMBT3906U:
Two (galvanic) internal isolated transistor
with good matching in one package
•
Complementary types:
SMBT3904...MMBT3904 (NPN)
•
SMBT3906S/ U: for orientation in reel
see package information below
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
Type
SMBT3906/ MMBT3906
SMBT3906S
SMBT3906U
Marking
s2A
s2A
s2A
1=B
Pin Configuration
2=E
3=C
-
-
-
Package
SOT23
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
T
S
≤
71°C, SOT23, MMBT3906
T
S
≤
115°C, SOT363, MMBT3906S
T
S
≤
107°C, SC74, MMBT3906U
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
tot
Value
40
40
6
200
330
250
330
Unit
V
mA
mW
Junction temperature
Storage temperature
T
j
T
stg
150
-65 ... 150
°C
1
2012-08-21
SMBT3906...MMBT3906
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
≤
240
≤
140
≤
130
Unit
mW
SMBT3906/ MMBT3906
SMBT3906S
SMBT3906U
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
40
I
C
= 1 mA,
I
B
= 0
Unit
V
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
40
6
-
-
-
-
-
-
50
nA
-
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
DC current gain
1)
I
C
= 100 µA,
V
CE
= 1 V
I
C
= 1 mA,
V
CE
= 1 V
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 50 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
60
80
100
60
30
V
CEsat
-
-
-
-
-
-
-
-
-
-
-
300
-
-
V
0.25
0.4
0.85
0.95
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
-
-
V
BEsat
Base emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
1
Pulse
0.65
-
test: t < 300µs; D < 2%
2
2012-08-21
SMBT3906...MMBT3906
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 20 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Delay time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
= 1 mA,
V
BE(off)
= 0.5 V
Rise time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
= 1 mA,
V
BE(off)
= 0.5 V
Storage time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
=
I
B2
= 1 mA
Fall time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
=
I
B2
= 1 mA
Noise figure
I
C
= 100 µA,
V
CE
= 5 V,
f
= 1 kHz,
∆
f
= 200 Hz,
R
S
= 1 kΩ
F
-
-
4
dB
t
f
-
-
75
t
stg
-
-
225
t
r
-
-
35
t
d
-
-
35
ns
C
eb
-
-
10
C
cb
-
-
3.5
pF
f
T
250
-
-
MHz
Symbol
min.
Values
typ.
max.
Unit
3
2012-08-21
SMBT3906...MMBT3906
Test circuit
Delay and rise time
-3.0 V
275
Ω
<1.0 ns
+0.5 V 10 k
Ω
0
-10.6 V
D
= 2%
C
<4.0 pF
300 ns
EHN00059
Storage and fall time
-3.0 V
<1.0 ns
+9.1 V
0
-10.9 V
10 <
t
1
< 500
µs
D
= 2%
10 k
Ω
275
Ω
C
1N916
<4.0 pF
t
1
EHN00060
4
2012-08-21
SMBT3906...MMBT3906
DC current gain
h
FE
=
ƒ(I
C
)
V
CE
= 1 V
10
3
Saturation voltage
I
C
=
ƒ(V
BEsat
;
V
CEsat
)
h
FE
= 10
EHP00767
2
mA
125 °C
25 °C
Ι
C
10
2
5
V
CE
V
BE
h
FE
10
2
-55 °C
10
1
5
10
1 -5
10
10
-4
10
-3
10
-2
10
-1
10
mA
0
10
0
0
0.2
0.4
0.6
0.8
1.0 V 1.2
V
BE sat
,
V
CE sat
I
C
Collector-base capacitance
C
cb
=
ƒ(V
CB
)
Emitter-base capacitance
C
eb
=
ƒ(V
EB
)
8
pF
Total power dissipation
P
tot
=
ƒ(T
S
)
SMBT3906
360
mW
300
270
7
V
CB
/V
EB
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0
4
8
12
16
V
CCB
CEB
P
tot
22
240
210
180
150
120
90
60
30
0
0
15
30
45
60
75
90 105 120
C
CB
/C
EB
°C
150
T
S
5
2012-08-21
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
