SKB10N60A
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
•
75% lower
E
off
compared to previous generation
combined with low conduction losses
•
Short circuit withstand time – 10
µs
•
Designed for frequency inverters for washing machines,
fans, pumps and vacuum cleaners
•
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
•
Very soft, fast recovery anti-parallel EmCon diode
•
Pb-free lead plating; RoHS compliant
1
•
Qualified according to JEDEC for target applications
•
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
SKB10N60A
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150°C
Diode forward current
T
C
= 25°C
T
C
= 100°C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
Soldering temperature (reflow soldering, MSL1)
T
j
,
T
stg
T
s
2
C
G
E
PG-TO-263-3-2
V
CE
600V
I
C
10A
V
CE(sat)
2.3V
T
j
150°C
Marking
Package
K10N60 PG-TO-263-3-2
Symbol
V
CE
I
C
Value
600
20
10.6
Unit
V
A
I
Cpul s
-
I
F
40
40
21
10
I
Fpul s
V
GE
t
SC
P
tot
42
±20
10
92
-55...+150
245
V
µs
W
°C
°C
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150°C
1
2
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.2
Oct. 07
SKB10N60A
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
SMD version, device on PCB
1)
Symbol
R
thJC
R
thJCD
R
thJA
Conditions
Max. Value
1.35
2.4
40
Unit
K/W
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 5 00
µA
V
CE(sat)
V
G E
= 15 V ,
I
C
= 10 A
T
j
=2 5
°C
T
j
=1 5 0° C
Diode forward voltage
V
F
V
G E
= 0V ,
I
F
= 1 0 A
T
j
=2 5
°C
T
j
=1 5 0° C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 30 0
µA
,
V
C E
=
V
G E
V
C E
= 60 0 V,
V
G E
= 0 V
T
j
=2 5
°C
T
j
=1 5 0° C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
Symbol
Conditions
Value
min.
600
1.7
-
1.2
-
3
-
-
-
-
-
-
-
-
-
Typ.
-
2
2.3
1.4
1.25
4
-
-
-
6.7
550
62
42
52
7
100
max.
-
2.4
2.8
1.8
1.65
5
Unit
V
µA
40
1500
100
-
660
75
51
68
-
-
nC
nH
A
nA
S
pF
I
GES
g
fs
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
= 0V ,
V
G E
=2 0 V
V
C E
= 20 V ,
I
C
= 10 A
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 48 0 V,
I
C
=1 0 A
V
G E
= 15 V
V
G E
= 15 V ,t
S C
≤
10
µs
V
C C
≤
6 0 0 V,
T
j
≤
1 5 0° C
-
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2)
1)
2
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.2
Oct. 07
SKB10N60A
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Q
rr
I
rrm
d i
r r
/d t
T
j
=2 5
°C
,
V
R
= 2 00 V ,
I
F
= 1 0 A,
d i
F
/ d t
=2 0 0 A/
µs
-
-
-
-
-
-
220
20
200
310
4.5
180
-
-
-
-
-
-
nC
A
A/µs
ns
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=2 5
°C
,
V
C C
= 40 0 V,
I
C
= 1 0 A,
V
G E
= 0/ 15 V ,
R
G
= 25
Ω,
1)
L
σ
=1 8 0n H,
1)
C
σ
= 5 5p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
28
12
178
24
0.15
0.17
0.320
34
15
214
29
0.173
0.221
0.394
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Q
rr
I
rrm
d i
r r
/d t
T
j
=1 5 0° C
V
R
= 2 00 V ,
I
F
= 1 0 A,
d i
F
/ d t
=2 0 0 A/
µs
-
-
-
-
-
-
350
36
314
690
6.3
200
-
-
-
-
-
-
nC
A
A/µs
ns
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=1 5 0° C
V
C C
= 40 0 V,
I
C
= 1 0 A,
V
G E
= 0/ 15 V ,
R
G
= 25
Ω
1)
L
σ
=1 8 0n H,
1)
C
σ
= 5 5p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
28
12
198
26
0.260
0.280
0.540
34
15
238
32
0.299
0.364
0.663
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
1)
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to dynamic test circuit in Figure E.
3
Rev. 2.2
Oct. 07
SKB10N60A
50A
T
C
=80°c
I
C
,
COLLECTOR CURRENT
I
c
t
p
= 5
µ
s
I
C
,
COLLECTOR CURRENT
40A
30A
20A
10A
T
C
=110°c
10A
1 5
µ
s
5 0
µ
s
1A
2 0 0
µ
s
1m s
DC
1V
10V
100V
1000V
I
c
0 ,1 A
0A
10H z
100H z
1kH z
10kH z 100kH z
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 25Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤
150°C)
120W
25A
100W
20A
P
tot
,
POWER DISSIPATION
80W
I
C
,
COLLECTOR CURRENT
15A
60W
10A
40W
20W
5A
0W
25°C
50°C
75°C
100°C
1 25°C
0A
25°C
50°C
75°C
1 0 0 °C
1 2 5 °C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≤
15V,
T
j
≤
150°C)
4
Rev. 2.2
Oct. 07
SKB10N60A
35A
30A
35A
30A
I
C
,
COLLECTOR CURRENT
25A
V
G E
= 2 0 V
20A
15A
10A
5A
0A
0V
15V
13V
11V
9V
7V
5V
I
C
,
COLLECTOR CURRENT
25A
V
G E
= 2 0 V
20A
15A
10A
5A
0A
0V
15V
13V
11V
9V
7V
5V
1V
2V
3V
4V
5V
1V
2V
3V
4V
5V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T
j
= 150°C)
V
CE(sat)
,
COLLECTOR
-
EMITTER SATURATION VOLTAGE
35A
30A
3 ,5 V
T
j
=+25°C
+150°C
I
C
= 2 0 A
3 ,0 V
I
C
,
COLLECTOR CURRENT
25A
20A
15A
10A
5A
0A
0V
2 ,5 V
I
C
= 1 0 A
2 ,0 V
I
C
= 5 A
2V
4V
6V
8V
10V
1 ,5 V
0 °C
5 0 °C
1 0 0 °C
1 5 0 °C
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V
CE
= 10V)
T
j
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
GE
= 15V)
5
Rev. 2.2
Oct. 07
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