PD - 97154
IRGI4045DPbF
INSULATED GATE BIPOLAR TRANSISTOR
WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
•
Low V
CE (on)
Trench IGBT Technology
Low Switching Losses
5μs SCSOA
Square RBSOA
100% of The Parts Tested for I
LM
Positive V
CE (on)
Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free Package
G
E
C
V
CES
= 600V
I
C
=
6.0A, T
C
= 100°C
t
sc
> 5µs, T
jmax
= 150°C
n-channel
C
V
CE(on) typ.
=
1.70V
Benefits
•
High Efficiency in a Wide Range of Applications
•
Suitable for a Wide Range of Switching Frequencies due
to Low V
CE (ON)
and Low Switching Losses
•
Rugged Transient Performance for Increased Reliability
•
Excellent Current Sharing in Parallel Operation
•
Low EMI
E
C
G
TO-220AB
Full-Pak
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@T
C
=25°C
I
F
@T
C
=100°C
I
FM
V
GE
P
D
@ T
C
=25°C
P
D
@ T
C
=100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
=15V
Clamped Inductive Load Current, V
GE
=20V
c
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
d
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Max.
600
11
6
18
24
11
6
24
± 20
± 30
33
13
-55 to + 150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case - IGBT
e
Junction-to-Case - Diode
e
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
e
Weight
Min.
—
—
—
—
—
Typ.
—
—
Max.
3.76
9.00
—
Units
°C/W
g
0.5
—
65
—
2.0
1
www.irf.com
5/22/09
IRGI4045DPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
ΔV
(BR)CES
/ΔT
J
Min.
600
—
—
—
—
4.0
—
—
—
—
—
—
—
Typ.
—
0.75
1.70
2.01
2.10
-14
3.5
—
—
1.60
1.33
—
Max.
—
—
2.0
—
—
6.5
—
—
25
250
2.3
—
±100
Units
V
V/°C
V
V
Conditions
V
GE
= 0V,I
c
=100
μA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
V
GE
= 0V, I
c
= 250
μA
( -55°C to 150
o
C )
I
C
= 6A, V
GE
= 15V, T
J
= 25°C
I
C
= 6A, V
GE
= 15V, T
J
= 125°C
I
C
= 6A, V
GE
= 15V, T
J
= 150°C
V
CE
= V
GE
, I
C
= 150
μA
f
f
V
CE(on)
V
GE(th)
ΔV
GE(th)
/ΔTJ
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
gfe
I
CES
V
FM
I
GES
o
mV/°C V
CE
= V
GE
, I
C
= 1.0mA ( -55°C to 150 C )
V
CE
= 50V, I
C
= 6A, PW =80μs
S
μA
μA
V
nA
V
GE
= 0V,V
CE
= 600V
V
GE
= 0v, V
CE
= 600V, T
J
=150°C
I
F
= 6A
I
F
= 6A, T
J
= 150°C
V
GE
= ± 20 V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
13
3.3
5.9
64
123
187
26
13
73
19
126
169
294
25
13
86
30
354
29
9.4
Max.
20
5.0
8.9
169
229
296
35
22
84
28
—
—
—
—
—
—
—
—
—
—
Units
I
C
= 6A
nC
V
CC
= 400V
V
GE
= 15V
Conditions
I
C
= 6A, V
CC
= 400V, V
GE
= 15V
μJ
R
G
= 47Ω, L=1mH, L
S
= 150nH, T
J
= 25°C
Energy losses include tail and diode reverse recovery
I
C
= 6A, V
CC
= 400V
ns
R
G
= 47Ω, L=1mH, L
S
= 150nH
T
J
= 25°C
I
C
= 6A, V
CC
= 400V, V
GE
= 15V
μJ
R
G
= 47Ω, L=1mH, L
S
= 150nH, T
J
= 150°C
Energy losses include tail and diode reverse recovery
I
C
= 6A, V
CC
= 400V
ns
R
G
= 47Ω, L=1mH, L
S
= 150nH
T
J
= 150°C
V
GE
= 0V
pF
V
CC
= 30V
f = 1Mhz
T
J
= 150°C, I
C
= 24A
V
CC
= 480V, Vp =600V
Rg =47Ω, V
GE
= +20V to 0V
V
CC
= 400V, Vp =600V
R
G
= 47Ω, V
GE
= +15V to 0V
T
J
= 150
o
C
V
CC
= 400V, I
F
= 6A
V
GE
= 15V, Rg = 47Ω, L=1mH, L
S
=150nH
FULL SQUARE
SCSOA
Erec
trr
Irr
Short Circuit Safe Operating Area
Reverse recovery energy of the diode
Diode Reverse recovery time
Peak Reverse Recovery Current
5
—
—
—
—
147
73
11
—
—
—
—
μs
μJ
ns
A
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 28
μH,
R
G
= 47
Ω
Pulse width limited by max. junction temperature.
R
θ
is measured at T
J
approximately 90°C
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely
2
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IRGI4045DPbF
12
10
30
8
Ptot (W)
IC (A)
40
6
4
20
10
2
0
0
20
40
60
80
100 120 140 160
TC (°C)
0
0
20
40
60
80
100 120 140 160
TC (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
100
100
Fig. 2
- Power Dissipation vs. Case
Temperature
10
100
μs
1ms
10
μs
10
IC (A)
1
DC
0.1
IC A)
1
0.01
1
10
VCE (V)
100
1000
0
10
100
1000
VCE (V)
Fig. 3
- Forward SOA,
T
C
= 25°C; T
J
≤
150°C
20
20
Fig. 4
- Reverse Bias SOA
T
J
= 150°C; V
CE
= 15V
16
VGE = 18V
ICE (A)
16
VGE = 18V
ICE (A)
12
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
12
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
8
8
4
4
0
0
2
4
6
VCE (V)
8
10
0
0
2
4
6
VCE (V)
8
10
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp <60μs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp < 60μs
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3
IRGI4045DPbF
20
VGE = 18V
16
VGE = 15V
VGE = 12V
VGE = 10V
ICE (A)
60
50
40
IF (A)
12
VGE = 8.0V
30
20
-40°C
25°C
150°C
8
4
10
0
0
2
4
6
VCE (V)
8
10
0.0
1.0
2.0
VF (V)
3.0
4.0
0
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp < 60μs
14
12
10
VCE (V)
VCE (V)
Fig. 8
- Typ. Diode Forward Characteristics
tp < 60μs
14
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 3.0A
ICE = 11A
ICE = 6.0A
8
6
4
2
0
ICE = 3.0A
ICE = 11A
ICE = 6.0A
15
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
14
12
10
VCE (V)
ICE (A)
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
20
TJ = -40°C
TJ = 25°C
16
TJ = 150°C
8
6
4
2
0
5
10
VGE (V)
ICE = 3.0A
ICE = 11A
12
ICE = 6.0A
8
4
0
15
20
2
4
6
8
10
12
14
16
18
VGE (V)
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 150°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp < 60μs
4
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IRGI4045DPbF
400
1000
300
Energy (μJ)
Swiching Time (ns)
EOFF
EON
100
tdOFF
tF
tdON
200
10
100
tR
0
0
4
8
I C (A)
12
16
1
0
4
8
12
16
IC (A)
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 150°C; L = 1mH; V
CE
= 400V, R
G
= 47Ω; V
GE
= 15V.
200
1000
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 150°C; L=1mH; V
CE
= 400V
R
G
= 47Ω; V
GE
= 15V
EOFF
150
EON
Energy (μJ)
100
Swiching Time (ns)
tdOFF
100
tF
tdON
tR
50
0
0
25
50
75
100
125
10
0
25
50
75
100
125
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 150°C; L = 1mH; V
CE
= 400V, I
CE
= 6.0A; V
GE
= 15V
20
20
RG (Ω)
RG (Ω)
Fig. 16-
Typ. Switching Time vs. R
G
T
J
= 150°C; L=1mH; V
CE
= 400V
I
CE
= 6.0A; V
GE
= 15V
RG =10
Ω
16
RG =22
Ω
IRR (A)
12
16
RG =47
Ω
8
IRR (A)
12
16
12
RG = 100
Ω
4
8
0
0
4
8
4
0
25
50
75
100
125
IF (A)
RG (Ω)
Fig. 17
- Typical Diode I
RR
vs. I
F
T
J
= 150°C
Fig. 18
- Typical Diode I
RR
vs. R
G
T
J
= 150°C; I
F
= 6.0A
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