IR3505Z
DATA SHEET
XPHASE3
TM
PHASE IC
DESCRIPTION
The IR3505Z Phase IC combined with an IR
XPhase3
TM
Control IC provides a full featured and flexible way to
implement power solutions for the latest high performance CPUs and ASICs. The “Control” IC provides
overall system control and interfaces with any number of “Phase” ICs which each drive and monitor a single
phase of a multiphase converter. The
XPhase3
TM
architecture results in a power supply that is smaller, less
expensive, and easier to design while providing higher efficiency than conventional approaches.
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
7V/2A gate drivers (4A GATEL sink current)
Support converter output voltage up to 5.1 V (Limited to VCCL-1.4V)
Support loss-less inductor current sensing
Feed-forward voltage mode control
Integrated boot-strap synchronous PFET
Only four IC related external components per phase
3 wire analog bus connects Control and Phase ICs (VDAC, Error Amp, ISHARE)
3 wire digital bus for accurate daisy-chain phase timing control without external components
Debugging function isolates phase IC from the converter
Self-calibration of PWM ramp, current sense amplifier, and current share amplifier
Single-wire bidirectional average current sharing
Small thermally enhanced 16L 3 x 3mm MLPQ package
RoHS compliant
APPLICATION CIRCUIT
Page 1 of 20
March 17, 2009
IR3505Z
ORDERING INFORMATION
Part Number
IR3505ZMTRPBF
* IR3505ZMPBF
* Samples only
Package
16 Lead MLPQ
(3 x 3 mm body)
16 Lead MLPQ
(3 x 3 mm body)
Order Quantity
3000 per reel
100 piece strips
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed below may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other conditions beyond those indicated in the operational
sections of the specifications are not implied.
Operating Junction Temperature…………….. 0
o
C to 150
o
C
Storage Temperature Range………………….-65
o
C to 150
o
C
MSL Rating………………………………………2
Reflow Temperature…………………………….260
o
C
PIN #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
PIN NAME
ISHARE
DACIN
LGND
PHSIN
PHSOUT
CLKIN
PGND
GATEL
VCCL
BOOST
GATEH
SW
VCC
CSIN+
CSIN-
EAIN
V
MAX
8V
3.3V
n/a
8V
8V
8V
0.3V
8V
8V
34V
34V
34V
18V
8V
8V
8V
V
MIN
-0.3V
-0.3V
n/a
-0.3V
-0.3V
-0.3V
-0.3V
-0.3V DC, -5V for
100ns
-0.3V
-0.3V
-0.3V DC, -5V for
100ns
-0.3V DC, -5V for
100ns
-0.3V
-0.3V
-0.3V
-0.3V
I
SOURCE
1mA
1mA
n/a
1mA
2mA
1mA
5A for 100ns,
200mA DC
5A for 100ns,
200mA DC
n/a
1A for 100ns,
100mA DC
3A for 100ns,
100mA DC
3A for 100ns,
100mA DC
n/a
1mA
1mA
1mA
I
SINK
1mA
1mA
n/a
1mA
2mA
1mA
n/a
5A for 100ns,
200mA DC
5A for 100ns,
200mA DC
3A for 100ns,
100mA DC
3A for 100ns,
100mA DC
n/a
10mA
1mA
1mA
1mA
Note:
1. Maximum GATEH – SW = 8V
2. Maximum BOOST – GATEH = 8V
Page 2 of 20
March 17, 2009
IR3505Z
RECOMMENDED OPERATING CONDITIONS FOR RELIABLE OPERATION WITH MARGIN
8.0V
≤
V
CC
≤
16V, 4.75V
≤
V
CCL
≤
7.5V, 0.5V
≤
V(DACIN)
≤
1.6V, 250kHz
≤
CLKIN
≤
9MHz, 250kHz
≤
PHSIN
≤1.5MHz,
0
o
C
≤
T
J
≤
125
o
C
ELECTRICAL CHARACTERISTICS
The electrical characteristics involve the spread of values guaranteed within the recommended operating conditions.
Typical values represent the median values, which are related to 25°C. C
GATEH
= 3.3nF, C
GATEL
= 6.8nF (unless
otherwise specified).
PARAMETER
Gate Drivers
GATEH Source Resistance
GATEH Sink Resistance
GATEL Source Resistance
GATEL Sink Resistance
GATEH Source Current
GATEH Sink Current
GATEL Source Current
GATEL Sink Current
GATEH Rise Time
GATEH Fall Time
GATEL Rise Time
GATEL Fall Time
GATEL low to GATEH high
delay
GATEH low to GATEL high
delay
Disable Pull-Down
Resistance
Clock
CLKIN Threshold
CLKIN Bias Current
CLKIN Phase Delay
PHSIN Threshold
PHSOUT Propagation
Delay
PHSIN Pull-Down
Resistance
PHSOUT High Voltage
PHSOUT Low Voltage
TEST CONDITION
BOOST – SW = 7V. Note 1
BOOST – SW = 7V. Note 1
VCCL – PGND = 7V. Note 1
VCCL – PGND = 7V. Note 1
BOOST=7V, GATEH=2.5V, SW=0V.
BOOST=7V, GATEH=2.5V, SW=0V.
VCCL=7V, GATEL=2.5V, PGND=0V.
VCCL=7V, GATEL=2.5V, PGND=0V.
BOOST – SW = 7V, measure 1V to 4V
transition time
BOOST - SW = 7V, measure 4V to 1V
transition time
VCCL – PGND = 7V, Measure 1V to 4V
transition time
VCCL – PGND = 7V, Measure 4V to 1V
transition time
BOOST = VCCL = 7V, SW = PGND = 0V,
measure time from GATEL falling to 1V to
GATEH rising to 1V
BOOST = VCCL = 7V, SW = PGND = 0V,
measure time from GATEH falling to 1V to
GATEL rising to 1V
Note 1
MIN
TYP
1.0
1.0
1.0
0.4
2.0
2.0
2.0
4.0
5
5
10
5
10
20
MAX
2.5
2.5
2.5
1.0
UNIT
Ω
Ω
Ω
Ω
A
A
A
A
ns
ns
ns
ns
ns
10
10
20
10
40
10
20
40
ns
30
80
130
kΩ
Compare to V(VCCL)
CLKIN = V(VCCL)
Measure time from CLKIN<1V to
GATEH>1V
Compare to V(VCCL)
Measure time from CLKIN > (VCCL * 50% )
to PHSOUT > (VCCL *50%). 10pF @125
o
C
40
-0.5
40
35
4
30
45
0.0
75
50
15
100
0.6
0.4
57
0.5
125
55
35
170
%
µA
ns
%
ns
kΩ
V
I(PHSOUT) = -10mA, measure VCCL –
PHSOUT
I(PHSOUT) = 10mA
1
1
V
Page 3 of 20
March 17, 2009
IR3505Z
PARAMETER
PWM Comparator
PWM Ramp Slope
Input Offset Voltage
EAIN Bias Current
Minimum Pulse Width
Minimum GATEH Turn-off
Time
Current Sense Amplifier
CSIN+/- Bias Current
CSIN+/- Bias Current
Mismatch
Input Offset Voltage
Gain
Unity Gain Bandwidth
Slew Rate
Differential Input Range
Differential Input Range
Common Mode Input Range
Rout at T
J
= 25
o
C
Rout at T
J
= 125
o
C
ISHARE Source Current
ISHARE Sink Current
Share Adjust Amplifier
Input Offset Voltage
Differential Input Range
Gain
Unity Gain Bandwidth
PWM Ramp Floor Voltage
Maximum PWM Ramp Floor
Voltage
Minimum PWM Ramp Floor
Voltage
Body Brake Comparator
Threshold Voltage with EAIN
falling.
Threshold Voltage with EAIN
rising.
Hysteresis
Propagation Delay
Vin=12V
Note 1
0
≤
EAIN
≤
3V
Note 1
TEST CONDITION
MIN
TYP
MAX
UNIT
mV/
%DC
mV
µA
ns
nS
nA
nA
mV
V/V
MHz
V/µs
mV
mV
V
kΩ
kΩ
mA
mA
mV
V
V/V
kHz
mV
mV
120
180
240
mV
-220
-160
-100
42
-5
-5
20
-200
-50
-1
30
4.8
52.5
0
-0.3
65
80
0
0
57
5
5
75
160
200
50
1
Note 1
CSIN+ = CSIN- = DACIN. Measure
input referred offset from DACIN
0.5V
≤
V(DACIN) < 1.6V
C(ISHARE)=10pF. Measure at ISHARE.
Note 1
0.8V
≤
V(DACIN)
≤
1.6V, Note 1
0.5V
≤
V(DACIN) < 0.8V, Note 1
Note 1
Note 1
32.5
6.8
6
35
8.8
-10
-5
0
2.3
3.6
0.500
0.500
-3
-1
4
4
-116
3.0
4.7
1.6
1.4
0
5.0
8.5
0
50
50
Note2
3.7
5.4
2.9
2.9
3
1
6
17
+116
Note 1
Note 1
CSIN+ = CSIN- = DACIN. Note 1
Note 1
ISHARE unconnected
Measured Relative to DACIN
ISHARE = DACIN - 200mV
Measured relative to FLOOR with
ISHARE unconnected
ISHARE = DACIN + 200mV
Measured relative to FLOOR with
ISHARE unconnected
Measured relative to PWM Ramp Floor
Voltage
Measured relative to PWM Ramp Floor
Voltage
VCCL = 5V. Measure time from EAIN <
V(DACIN) (200mV overdrive) to GATEL
transition to < 4V.
-300
-200
70
40
-200
-100
105
65
-110
-10
130
90
mV
mV
mV
ns
Page 4 of 20
March 17, 2009
IR3505Z
PARAMETER
OVP Comparator
OVP Threshold
TEST CONDITION
MIN
-1.0
15
TYP
-0.8
40
MAX
-0.4
70
UNIT
V
nS
Step V(ISHARE) up until GATEL drives
high. Compare to V(VCCL)
Propagation Delay
V(VCCL)=5V, Step V(ISHARE) up from
V(DACIN) to V(VCCL). Measure time to
V(GATEL)>4V.
Synchronous Rectification Disable Comparator
Threshold Voltage
The ratio of V(CSIN-) / V(DACIN), below
which V(GATEL) is always low.
Negative Current Comparator
Input Offset Voltage
Note 1
Propagation Delay Time
Apply step voltage to V(CSIN+) –
V(CSIN-). Measure time to V(GATEL)<
1V.
Bootstrap Diode
Forward Voltage
I(BOOST) = 30mA, VCCL=6.5V
Debug Comparator
Threshold Voltage
Compare to V(VCCL)
General
VCC Supply Current
VCCL Supply Current
BOOST Supply Current
4.75V
≤
V
(
BOOST)-V(SW)
≤
8V
DACIN Bias Current
SW Floating Voltage
Measured in the application
66
75
86
%
-16
100
0
200
16
400
mV
nS
180
-250
1.1
3.1
1.2
-1.5
260
-150
3.0
6.7
3.5
-0.75
0.3
480
-50
6.1
12.1
5.8
1
mV
mV
mA
mA
mA
µA
V
Note 1:
Guaranteed by design, but not tested in production
Note 2:
VCCL-0.5V or VCC – 2.5V, whichever is lower
Page 5 of 20
March 17, 2009
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