Datasheet> 器件分类 > 分立半导体> 晶体管> BUV28-QR-BR3

BUV28-QR-BR3: 产品描述Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN; 产品类别分立半导体晶体管; 文件大小17KB，共2页; 制造商TT Electronics plc; 官网地址http://www.ttelectronics.com/; 标准

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BUV28-QR-BR3概述

Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

BUV28-QR-BR3规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	TT Electronics plc
包装说明	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	HIGH RELIABILITY
最大集电极电流 (IC)	10 A
集电极-发射极最大电压	200 V
配置	SINGLE
最小直流电流增益 (hFE)	10
JEDEC-95代码	TO-220AB
JESD-30 代码	R-PSFM-T3
JESD-609代码	e3
元件数量	1
端子数量	3
最高工作温度	175 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	NO
端子面层	TIN
端子形式	THROUGH-HOLE
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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BUV28

MECHANICAL DATA

Dimensions in mm(inches)

10.2

1.3

4.5

NPN SWITCHING

TRANSISTOR

6.3

3.6 Dia.

15.1

FEATURES

• LOW SATURATION VOLTAGE

18.0

• FAST SWITCHING

• HIGH RELIABILITY

1 2 3

1.3

14.0

APPLICATIONS

0.85

• Switching Regulators

• Solenoid / Relay Drives

0.5

2.54 2.54

DESCRIPTION

High speed transistor suited for low

voltage applications.

TO–220

PIN 1 — Base PIN 2 — Collector PIN 3 — Emitter

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

CBO

CEO

EBO

tot

stg,

Collector – Base Voltage (I

= 0)

Collector – Emitter Voltage (I

= 0)

Emitter – Base Voltage (I

= 0)

Collector Current

Peak Collector Current (t

≤

5 ms)

Base Current

Total Power Dissipation at T

case

≤

25°C

Storage Temperature

Junction Temperature

400V

200V

10A

15A

85W

–65 to +175°C

+175°C

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Document Number 5923

Issue 1

BUV28-QR-BR3相似产品对比

	BUV28-QR-BR3	BUV28-QR-B	BUV28R3
描述	Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
是否Rohs认证	符合	不符合	符合
厂商名称	TT Electronics plc	TT Electronics plc	TT Electronics plc
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99
其他特性	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
最大集电极电流 (IC)	10 A	10 A	10 A
集电极-发射极最大电压	200 V	200 V	200 V
配置	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	10	10	10
JEDEC-95代码	TO-220AB	TO-220AB	TO-220AB
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
元件数量	1	1	1
端子数量	3	3	3
最高工作温度	175 °C	175 °C	175 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	NPN	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON
JESD-609代码	e3	-	e3
端子面层	TIN	-	TIN

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