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SMDP-67204FV-30/883

产品描述FIFO, 4KX9, 30ns, Asynchronous, CMOS, CDFP28, 0.400 INCH, FP-28
产品类别存储    存储   
文件大小344KB,共20页
制造商TEMIC
官网地址http://www.temic.de/
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SMDP-67204FV-30/883概述

FIFO, 4KX9, 30ns, Asynchronous, CMOS, CDFP28, 0.400 INCH, FP-28

SMDP-67204FV-30/883规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称TEMIC
包装说明0.400 INCH, FP-28
Reach Compliance Codeunknown
最长访问时间30 ns
周期时间40 ns
JESD-30 代码R-CDFP-F28
JESD-609代码e0
内存密度36864 bit
内存集成电路类型OTHER FIFO
内存宽度9
功能数量1
端子数量28
字数4096 words
字数代码4000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织4KX9
可输出NO
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码DFP
封装等效代码FL28,.4
封装形状RECTANGULAR
封装形式FLATPACK
并行/串行PARALLEL
电源5 V
认证状态Not Qualified
筛选级别MIL-STD-883 Class S
最大待机电流0.005 A
最大压摆率0.11 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级MILITARY
端子面层Tin/Lead (Sn/Pb)
端子形式FLAT
端子节距1.27 mm
端子位置DUAL

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Features
First-in first-out dual port memory
4096 y 9 organisation
Fast Flag and access times: 15, 30 ns
Wide temperature range: - 55°C to + 125°C
Fully expandable by word width or depth
Asynchronous read/write operations
Empty, full and half flags in single device mode
Retransmit capability
Bi-directional applications
Battery back-up operation: 2V data retention
TTL compatible
Single 5V + 10% power supply
QML Q and V with SMD 5962-89568
Description
The M67204F implements a first-in first-out algorithm, featuring asynchronous
read/write operations. The FULL and EMPTY flags prevent data overflow and under-
flow. The Expansion logic allows unlimited expansion in word size and depth with no
timing penalties. Twin address pointers automatically generate internal read and write
addresses, and no external address information are required for the Atmel FIFOs.
Address pointers are automatically incremented with the write pin and read pin. The 9
bits wide data are used in data communications applications where a parity bit for
error checking is necessary. The Retransmit pin reset the Read pointer to zero without
affecting the write pointer. This is very useful for retransmitting data when an error is
detected in the system.
Using an array of eight transistors (8 T) memory cell, the M67204F combine an
extremely low standby supply current (typ = 0.1
µA)
with a fast access time at 15 ns
over the full temperature range. All versions offer battery backup data retention capa-
bility with a typical power consumption at less than 2
µW.
The M67204F is processed according to the methods of the latest revision of the MIL
PRF 38535 (Q and V) or ESA SCC 9000.
Rad Tolerant
High Speed
4Kx9
Parallel FIFO
M67204F
Rev. E–20-Aug-01
1

 
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