Product Description
Stanford Microdevices’ SSW-107 is a high performance
Gallium Arsenide Field Effect Transistor MMIC switch
housed in a low-cost surface-mountable miniature small
outline plastic package.
This single-pole, double-throw, non-reflective switch
consumes less than 50uA and operates at -5V and 0V for
control bias. Its high isolation and low insertion loss makes
it ideal for T/R switching in analog and digital wireless
communication systems.
The die is fabricated using 0.5 micron FET process with
gold metallization and silicon nitride passivation to achieve
excellent performance and reliability.
SSW-107
DC-4 GHz High Isolation
GaAs MMIC SPDT Switch
Isolation vs. Frequency
V
Control
= -5 V
-20
-30
-40
Product Features
•
High Isolation: 30dB at 2GHz
•
Low DC Power Consumption
•
Non-reflective
•
Broadband Performance - True DC
Operation
•
Low Cost Small Outline Plastic Package
dB
-50
-60
-70
DC
1
2
3
4
GHz
Applications
•
Analog/Digital Wireless System
•
Spread Spectrum
•
GPS
Switches
Electrical Specifications at Ta = 25C
Sym bol
In s
P a r a m e t e r s : T e s t C o n d i t io n s
I n s e rt io n L o s s
U n its
M in .
Ty p .
0 .7
0 .8
1 .4
30
22
35
28
25
1 .1 5
1 .2 5
1 .5 0
1 .1 5
1 .2 5
1 .5 0
dBm
dBm
dBm
dBm
uA
n se c
+26
+29
+45
+48
40
3
M ax.
1 .0
1 .0
f
= 0 .0 5 - 1 . 0 G H z
f = 1 . 0 -2 . 0 G H z
f = 2 . 0 -4 . 0 G H z
dB
dB
dB
dB
dB
dB
Iso l
I s o l a ti o n
f
= 0 .0 5 - 1 . 0 G H z
f = 1 . 0 -2 . 0 G H z
f = 2 . 0 -4 . 0 G H z
VS W R on
I n p u t & O u tp u t V S W R
( o n o r lo w lo s s s ta te )
f
= 0 .0 5 - 1 . 0 G H z
f = 1 . 0 -2 . 0 G H z
f = 2 . 0 -4 . 0 G H z
V S W R o ff
I n p u t & O u tp u t V S W R
( o ff o r is o la te d s ta te )
f
= 0 .0 5 - 1 . 0 G H z
f = 1 . 0 -2 . 0 G H z
f = 2 . 0 -4 . 0 G H
z
V = -5 V
V = -8 V
V = -5 V
V = -8 V
P1dB
O u tp u t P o w e r a t 1 d B C o m p r e s s io n
f= 0 .5 -4 .0 G H z
T h i r d O r d e r I n te r c e p t P o i n t
f= 0 .5 -4 .0 G H z
D e v ic e C u r re n t
S w itc h in g S p e e d
5 0 % c o n tro l to 1 0 % /9 0 % R F
T O IP
Id
Isw
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1998 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
SSW-107 DC-4 GHz Absorptive SPDT GaAs Switch
Absolute Maximum Ratings
R F In p u t Po w e r
C o n tro l Vo l ta g e
O p er at i n g
Te m p e r a t u r e
St orage
Te m p e r a t u r e
T he r m a l R e s i s ta n c e
2W Max>500MHz
-10V
-45C t o +85C
Truth Table
V1
V2
J1-J 2
J1-J 3
0
-5
-5
0
Low Los s
Is olat ion
Is olat ion
Low Los s
-65C t o +150C
2 0 d e g C /W
Pin Out
P i n F u n c ti o n
Switch Schematic
1
2
3
4
5
6
7
8
GND
J1
GND
GND
J2
V1
V2
J3
Switches
Insertion Loss vs. Frequency
V
Control
= -5 V
0.0
-0.5
On Port Input/Output VSWR vs. Frequency
V
Control
= -5 V
2.0
1.8
1.6
dB
-1.0
1.4
-1.5
-2.0
DC
1
2
3
4
1.2
1.0
DC
1
2
3
4
GHz
GHz
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
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