Data Sheet No. PD 96940A
IRIS-F6428S
Features
•
Oscillator is provided on the monolithic control with adopting On-Chip-
Trimming technology.
•
Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
•
Low start-up circuit current (100uA max)
•
Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
•
Avalanche energy guaranteed MOSFET with high VDSS
•
The built-in power MOSFET simplifies the surge absorption circuit
since the MOSFET guarantees the avalanche energy.
•
No VDSS de-rating is required.
•
Built-in constant voltage drive circuit
•
Built-in step drive circuit
•
Built-in low frequency PRC mode (≒20kHz)
•
Various kinds of protection functions
•
Pulse-by-pulse Overcurrent Protection (OCP)
•
Overvoltage Protection with latch mode (OVP)
•
Thermal Shutdown with latch mode (TSD)
IRIS-F6428S
450
0.35Ω
INTEGRATED SWITCHER
Package Outline
TO-247 Fullpack (5 Lead)
Key Specifications
Type
MOSFET
VDSS(V)
RDS(ON)
MAX
AC input(V)
100±15%
120±15%
Pout(W)
Note 1
225
290
Descriptions
Note 1: The Pout (W) represents the thermal rating at Quasi-Resonant
Operation, and the peak power output is obtained by approximately
120 to 140% of the above listed. When the output voltage is low and
ON-duty is narrow, the Pout (W) shall become lower than that of above.
IRIS-F6428S is a hybrid IC consists from power MOSFET and a controller IC, designed for Quasi-Resonant (including
low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes
high efficiency, low noise, downsizing and standardizing of a power supply system reducing external components count
and simplifying the circuit designs. (Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed
OFF-time).
Typical Connection Diagram
IRIS-F6400
GND
Vin
D
S
OCP/FB
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IRIS-F6428S
Absolute Maximum Ratings (Ta=25ºC)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
I
Dpeak
I
DMAX
Definition
Drain Current
*1
Maximum switching current *5
Terminals Max. Ratings
3-2
36
3-2
22
Units
A
A
Note
Single Pulse
V
2-5
=0.78V
Ta=-20~+125℃
Single Pulse
Vdd=30V, L=50mA
I
L peak
=9.2A
E
AS
Vin
Vth
P
D1
P
D2
T
F
Top
Tstg
Tch
Single pulse avalanche energy *2
Input voltage for control part
O.C.P/F.B Pin voltage
Power dissipation for MOSFET *3
Power dissipation for control part
(Control IC) *4
Internal frame temperature
in operation
Operating ambient temperature
Storage temperature
Channel temperature
3-2
4-5
1-5
3-2
4-5
-
-
-
-
647
35
6
58
2.8
0.49
-20 ~ +125
-20 ~ +125
-40 ~ +125
150
mJ
V
V
W
W
W
℃
℃
℃
℃
With infintite heatsink
Without heatsink
Specified by Vin×Iin
Refer to recommended
operating temperature
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.
Fig.1
V
2-5
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and
Pin 5 due to patterning, the maximum switching current decreases as shown by V
2-5
in Fig.1
Accordingly please use this device within the decrease value, referring to the derating curve of the
maximum switching current.
１-
Recommended operating conditions
Time for input of quasi resonant signals
For the quasi resonant signal inputted to O.C.P/F.B Pin at the time
of quasi resonant operation, the signal shall be wider than T
th(2).
Ｖ
O.C.P/F.B
0V
Tth(2)≧1.0μsec
Vth(2)
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IRIS-F6428S
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25℃, Vin=18V,unless otherwise specified)
Symbol
V
in(ON)
V
in(OFF)
I
in(ON)
I
in(OFF)
T
OFF(MAX)
Tth(2)
T
OFF(MIN)
Vth(1)
Vth(2)
I
OCP/FB
V
in(OVP)
I
in(H)
V
in(La.OFF)
Tj
(TSD)
Definition
Operation start voltage
Operation stop voltage
Circuit current in operation
Circuit current in non-operation
Maximum OFF time
Minimum time for input of quasi
resonant signals
*6
Minimum OFF time
*7
O.C.P/F.B Pin threshold voltage 1
O.C.P/F.B Pin threshold voltage 2
O.C.P/F.B Pin extraction current
O.V.P operation voltage
Latch circuit sustaining current *8
Latch circuit release voltage *8
Thermal shutdown operating temperature
MIN
14.4
9
-
-
45
-
-
0.68
1.3
1.2
20.5
-
6.6
140
Ratings
TYP
16
10
-
-
-
-
-
0.73
1.45
1.35
22.5
-
-
-
MAX
17.6
11
30
100
55
1
2
0.78
1.6
1.5
24.5
400
8.4
-
Units
V
V
mA
µA
µsec
µsec
µsec
V
V
mA
V
µA
V
℃
Test
Conditions
Vin=0→17.6V
Vin=17.6
→
9V
-
Vin=14V
-
-
-
-
-
Vin=0→24.5V
Vin=24.5
→8.5V
Vin=24.5
→6.6V
*6 Refer to Recommended operating conditions (See page 2)
*7 The minimum OFF time means T
OFF
width at the time when the minimum quasi resonant signal is inputted.
*8 The latch circuit means a circuit operated O.V.P and T.S.D.
Electrical Characteristics (for MOSFET)
(Ta=25℃) unless otherwise specified
Symbol
V
DSS
I
DSS
Definition
Drain-to-Source breakdown voltage
Drain leakage current
MIN
450
-
-
-
-
Ratings
TYP
-
-
-
-
-
MAX
-
300
0.35
250
0.85
Units
V
µA
Ω
nsec
℃
/W
Test Conditions
ID=300µA
V5
- 2
=0V(short)
V
DS
=450V
V5-2=0V(short)
V5-2=10V
I
D
=4.6A
R
DS(ON)
On-resistance
tf
Switching time
θ
ch-F
Thermal resistance
-
Between channel and
internal frame
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IRIS-F6428S
IRIS-F6428S
A.S.O. temperature derating coefficient curve
IRIS-F6428S
MOSFET
A.S.O. Curve
100
Drain current
limit by ON
resistance
Ta=25ºC
Single Pulse
0.1ms
100
A.S.O. temperature derating coefficient[%]
80
D rai C urrent I
D
[A ]
n
10
1ms
60
1
40
20
0.1
ASO temperature derating
shall be made by obtaining
ASO Coefficient from the left
curve in your use.
0
0
20
40
60
80
100
120
Internal frame temperature T
F
[
℃
]
0.01
1
10
100
D rai
n-to-Source V ol
tage V
D S
[V ]
1000
IRIS-F6428S
Maximum Switching current derating curve
T a=
‐ ½
+125
℃
20
IRIS-F6428S
Avalanche energy derating curve
100
25.0
80
DMAX
[A]
20.0
E
AS
temperature derating coefficient[%]
Maximum Switchng Current I
60
15.0
10.0
40
5.0
20
0.0
0.70
0.80
0.90
1.00
1.10
1.20
V
2-5
[V]
0
25
50
75
100
125
150
Channel temperature Tch [
℃
]
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IRIS-F6428S
IRIS-F6428S
MOSFET Ta-PD1 Curve
70
0.6
IRIS-F6428S
MIC T
F
-P
D2
Curve
P
D1
=58[W]
0.5
P
D2
=0.49[W]
60
Power dissipation P
D2
[W]
Power dissipation P
D1
[W]
50
With infinite
heatsink
0.4
40
0.3
30
0.2
20
10
Without
heatsink
P
D1
=2.8[W]
0.1
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Internal frame temperature T
F
[℃]
Ambient temperature Ta[℃]
IRIS-F6428S
Transient thermal resistance curve
10
Transient thermal resistance
θch-c[℃/W]
1
0.1
0.01
0.001
1µ
10µ
100µ
time t [sec]
1m
10m
100m
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