VS-ST103SP Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Stud Version), 105 A
FEATURES
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
TO-209AC (TO-94)
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
PRODUCT SUMMARY
Package
Diode variation
I
T(AV)
V
DRM
/V
RRM
V
TM
I
TSM
at 50 Hz
I
TSM
at 60 Hz
I
GT
T
C
/T
hs
TO-209AC (TO-94)
Single SCR
105 A
400 V to 800 V
1.73 V
3000 A
3150 A
200 mA
200 mA
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
50 Hz
I
TSM
60 Hz
50 Hz
60 Hz
V
DRM
/V
RRM
t
q
T
J
Range
TEST CONDITIONS
VALUES
105
T
C
85
165
3000
3150
45
41
400 to 800
10 to 25
-40 to 125
V
μs
°C
kA
2
s
A
UNITS
A
°C
I
2
t
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
VS-ST103S
08
800
900
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
30
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 11-Mar-14
Document Number: 94365
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST103SP Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100 µs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
r
Voltage before turn-on V
d
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
280
310
320
340
50
V
DRM
50
60
22/0.15
180
200
200
210
440
470
480
490
50
V
DRM
-
330
300
310
320
4730
2500
1530
840
50
V
DRM
-
3630
1850
1090
580
V
A/μs
85
22/0.15
°C
μF
A
85
60
22/0.15
85
60
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 76 °C case temperature
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope
resistance
Maximum holding current
Typical latching current
I
2
t
V
TM
V
T(TO)1
V
T(TO)2
r
t1
r
t2
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
105
85
165
3000
3150
2530
Sinusoidal half wave,
initial T
J
= T
J
maximum
2650
45
41
32
29
450
1.73
1.32
1.35
1.40
m
1.30
600
1000
mA
V
kA
2
s
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
I
TM
= 300 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
),
T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
),
T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
,
I
G
= 1 A
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned on current
Typical delay time
Maximum turn-off time
minimum
maximum
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
T
J
= T
J
maximum, V
DRM
= Rated V
DRM
, I
TM
= 2 x dI/dt
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 μs
Resistive load, gate pulse: 10 V, 5
source
T
J
= T
J
maximum, I
TM
= 100 A, commutating dI/dt = 10 A/μs
V
R
= 50 V, t
p
= 200 μs, dV/dt: See table in device code
VALUES
1000
0.80
10
25
μs
UNITS
A/μs
Revision: 11-Mar-14
Document Number: 94365
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST103SP Series
www.vishay.com
Vishay Semiconductors
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and off-state
leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum, linear to 80 % V
DRM
,
higher value available on request
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
30
UNITS
V/μs
mA
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, t
p
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
40
5
5
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Mounting torque, ± 10 %
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.195
K/W
0.08
15.5
(137)
14
(120)
130
UNITS
°C
N·m
(lbf in)
g
TO-209AC (TO-94)
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.034
0.040
0.052
0.076
0.126
RECTANGULAR CONDUCTION
0.025
0.042
0.056
0.079
0.127
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 11-Mar-14
Document Number: 94365
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST103SP Series
www.vishay.com
Vishay Semiconductors
130
ST103S Series
R
thJC
(DC) = 0.195 K/W
130
Maximum Allowable Case
Temperature (°C)
Maximum Allowable Case
Temperature (°C)
ST103S Series
R
thJC
(DC) = 0.195 K/W
120
120
110
100
90
80
110
Ø
Ø
Conduction period
Conduction angle
100
90
30°
80
0
10 20 30 40 50 60 70 80 90 100 110
60°
90° 120°
180°
30°
70
0
20
40
60° 90°
60
80
120° 180°
DC
100 120 140 160 180
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
180
180
Maximum Average On-State
Power Loss (W)
Maximum Average On-state
Power Loss (W)
160
140
120
100
80
60
40
20
0
0
180°
120°
90°
60°
30°
RMS limit
Ø
160
140
120
100
80
60
40
20
0
25
0.
3
0.
K/
W
2
R
th
0.4
0.5
K/
W
SA
=
1
0.
K/
W
K/
W
W
K/
R
-
Δ
0.8
K/W
/W
Conduction angle
ST083S Series
T
J
= 125 °C
10 20 30 40 50 60 70 80 90 100 110
1.2
K
50
75
100
125
Average On-State Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-State
Power Loss (W)
Maximum Average On-State
Power Loss (W)
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0
20
DC
180°
120°
90°
60°
30°
RMS limit
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0.2
0.3
R
K/
th
W
SA
=
0.
1
K
0.4
/W
K
0.5
/W
K/W
K/
W
-
Δ
R
Ø
Conduction angle
ST103S Series
T
J
= 125 °C
40
60
80 100 120 140 160 180
/W
1.2 K
/W
0.8
K
25
50
75
100
125
Average On-State Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 11-Mar-14
Document Number: 94365
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST103SP Series
www.vishay.com
Vishay Semiconductors
1
2800
2600
Peak Half Sine Wave
On-State Current (A)
2400
2200
2000
1800
1600
1400
1200
1
10
ST103S Series
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Z
thJC
- Transient
Thermal Impedance (K/W)
At any rated load condition and with
rated V
RRM
applied following surge
Steady state value
R
thJC
= 0.195 K/W
(DC operation)
0.1
ST103S Series
100
0.01
0.001
0.01
0.1
1
10
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
3000
2800
Q
rr
- Maximum Reverse
Recovery Charge (µC)
Peak Half Sine Wave
On-State Current (A)
2600
2400
2200
2000
1800
1600
1400
1200
0.01
Maximum non repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
160
140
120
I
TM
= 200 A
100
I
TM
= 100 A
80
60
I
TM
= 50 A
40
20
ST103S Series
T
J
= 125 °C
I
TM
= 500 A
I
TM
= 300 A
ST103S Series
0.1
1
10
20
30
40
50
60
70
80
90
100
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 9 - Reverse Recovered Charge Characteristics
Instantaneous On-State Current (A)
10 000
I
rr
- Maximum Reverse Recovery Current (A)
120
110
100
90
80
70
60
50
40
30
20
10
10
20
30
40
50
60
70
80
90
100
ST103S Series
T
J
= 125 °C
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
I
TM
= 100 A
I
TM
= 50 A
T
J
= 25 °C
T
J
= 125 °C
1000
ST103S Series
100
1
2
3
4
5
6
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Reverse Recovery Current Characteristics
Revision: 11-Mar-14
Document Number: 94365
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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