Contents
Features.............................................................
Applications .......................................................
Pin Arrangement................................................
Block Diagram ...................................................
Absolute Maximum Ratings...............................
Selection Guide .................................................
Electrical Characteristics ...................................
Test Circuits.......................................................
Dimensions........................................................
Taping................................................................
Notes .................................................................
1
1
1
1
2
2
2
6
6
7
8
VOLTAGE DETECTOR
S-806 Series
The S-806 Series is a non-adjusting voltage detector made using a
CMOS process. The voltage detectors are composed of a high-
precision and low power consumption standard voltage source, a
comparator, a hysteresis circuit, and an output driver. The detection
voltage is fixed internally, and the output form is Nch open-drain.
This series has various product line up.
Features
•
•
•
•
Low current consumption 10.0
µA
typ. (V
DD
= 6.0 V)
High-stable standard voltage source built-in 0.8 V typ.
Good hysteresis characteristics
208 mV typ. (S-806D )
Good temperature characteristic of detection voltage
±0.52
mV/°C typ. (S-806D)
•
TO-92 plastic packages
Applications
•
•
•
•
•
•
Battery checker
Level selector
Battery backup for memories
Power failure detector
Reset for microcomputer, etc.
Store signal detector for NV-RAM
Pin Arrangement
(1) Loose
(2) Taped (reel/zigzag)
1 V
DD
2 V
SS
3 OUT
1 V
DD
2 V
SS
3 OUT
1 2 3
Bottom view
1 2 3
Bottom view
Figure 1
Block Diagram
Nch open-drain output
V
DD
1
3
OUT
-
+
V
SS
2
Figure 2
Seiko Instruments Inc.
1
VOLTAGE DETECTOR
S-806 Series
Absolute Maximum Ratings
Table 1
(Unless otherwise specified : Ta=25°C)
Parameter
Power supply voltage
Input voltage
Output voltage
Output current
Power dissipation
Operating temperature
Storage temperature
Symbol
V
DD
-V
SS
V
IN
V
OUT
I
OUT
P
D
T
opr
T
stg
Ratings
12.0
V
SS
-0.3 to V
DD
+0.3
V
SS
-0.3 to 12
50
200
-20 to +75
-40 to +125
mA
mW
°C
Unit
V
Caution:
Keep static electricity to a minimum.
Selection Guide
The S-806 Series has 10 products with a detection voltage range of 2.3 V to 4.55 V.
Table 2
Detection
voltage range
(V)
Hysteresis width
(V, typ.)
Product name
Loose
2.195 to 2.405
2.395 to 2.605
2.595 to 2.805
2.795 to 3.005
2.895 to 3.205
3.095 to 3.405
3.395 to 3.705
3.695 to 4.005
3.995 to 4.305
4.40 to 4.70
0.115
0.125
0.135
0.148
0.150
0.163
0.178
0.193
0.208
0.050
S-806L
S-806K
S-806J
S-806I
S-806H
S-806G
S-806F
S-806E
S-806D
S-806C
Taped(reel)*
S-806L-X
S-806K-X
S-806J-X
S-806I-X
S-806H-X
S-806G-X
S-806F-X
S-806E-X
S-806D-X
S-806C-X
Taped(zigzag)
S-806L-Z
S-806K-Z
S-806J-Z
S-806I-Z
S-806H-Z
S-806G-Z
S-806F-Z
S-806E-Z
S-806D-Z
S-806C-Z
* : “X” changes intoT or F depending upon the direction of ICs on tape.
Electrical Characteristics
1. S-806L (Detection voltage: 2.195 V to 2.405 V)
Table 3
(Unless otherwise specified : Ta=25°C)
Parameter
Detection
voltage
Hysteresis width
Current
consumption
Operating
voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
∆-V
DET
∆Ta
Nch
V
DS
= 0.5 V
V
DD
= 0.95 V
V
DD
= 3.0 V
Conditions
Min.
2.195
1.5
0.03
0.23
Typ.
2.30
-V
DET
×0.05
10.0
0.25
0.50
±0.28
Max.
2.405
20.0
10.0
Unit
V
V
µA
V
mA
Test
circuit
1
1
2
1
3
Temperature
characteristic of
-V
DET
V
DD
= 1.2 V
-20°C
≤
Ta
≤
75°C
mV/°C
2
Seiko Instruments Inc.
VOLTAGE DETECTOR
S-806 Series
2. S-806K (Detection voltage: 2.395 V to 2.605 V)
Table 4
Parameter
Detection
voltage
Hysteresis width
Current
consumption
Operating
voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
∆-V
DET
∆Ta
Nch
V
DS
= 0.5 V
V
DD
= 0.95 V
V
DD
= 3.0 V
Conditions
(Unless otherwise specified : Ta=25°C)
Test
Min.
Typ.
Max.
Unit
circuit
2.395
2.50
2.605
V
1
1.5
0.03
0.23
-V
DET
×0.05
10.0
0.25
0.50
±0.31
20.0
10.0
V
µA
V
mA
1
2
1
3
Temperature
characteristic of
-V
DET
V
DD
= 1.2 V
-20°C
≤
Ta
≤
75°C
mV/°C
3. S-806J (Detection voltage: 2.595 V to 2.805 V)
Table 5
Parameter
Detection
voltage
Hysteresis width
Current
consumption
Operating
voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
∆-V
DET
∆Ta
Nch
V
DS
= 0.5 V
V
DD
= 0.95 V
V
DD
= 3.0 V
Conditions
(Unless otherwise specified : Ta=25°C)
Test
Min.
Typ.
Max.
Unit
circuit
2.595
2.70
2.805
V
1
1.5
0.03
0.23
-V
DET
×0.05
10.0
0.25
0.50
±0.34
20.0
10.0
V
µA
V
mA
1
2
1
3
Temperature
characteristic of
-V
DET
V
DD
= 1.2 V
-20°C
≤
Ta
≤
75°C
mV/°C
4. S-806I (Detection voltage: 2.795 V to 3.005 V)
Table 6
Parameter
Detection
voltage
Hysteresis width
Current
consumption
Operating
voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
∆-V
DET
∆Ta
Nch
V
DS
= 0.5 V
V
DD
= 1.2 V
V
DD
= 4.5 V
Conditions
(Unless otherwise specified : Ta=25°C)
Test
Min.
Typ.
Max.
Unit
circuit
2.795
2.90
3.005
V
1
1.5
0.23
1.60
-V
DET
×0.05
10.0
0.50
3.70
±0.37
20.0
10.0
V
µA
V
mA
1
2
1
3
Temperature
characteristic of
-V
DET
V
DD
= 2.4 V
-20°C
≤
Ta
≤
75°C
mV/°C
Seiko Instruments Inc.
3
VOLTAGE DETECTOR
S-806 Series
5 S-806H(Detection voltage: 2.85 V to 3.25 V)
Table 7
(Unless otherwise specified : Ta=25°C)
Parameter
Detection
voltage
Hysteresis width
Current
consumption
Operating
voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
∆-V
DET
∆Ta
Nch
V
DS
= 0.5 V
V
DD
= 1.2 V
V
DD
= 4.5 V
Conditions
Min.
2.895
1.6
0.23
1.60
Typ.
3.05
-V
DET
×0.05
10.0
0.50
3.70
±0.38
Max.
3.205
20.0
10.0
Unit
V
V
µA
V
mA
Test
circuit
1
1
2
1
3
Temperature
characteristic of
-V
DET
V
DD
= 2.4 V
-20°C
≤
Ta
≤
75°C
mV/°C
6. S-806G (Detection voltage: 3.095 V to 3.405 V)
Table 8
Parameter
Detection
voltage
Hysteresis width
Current
consumption
Operating
voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
∆-V
DET
∆Ta
Nch
V
DS
= 0.5 V
V
DD
= 1.2 V
V
DD
= 4.5 V
Conditions
(Unless otherwise specified : Ta=25°C)
Test
Min.
Typ.
Max.
Unit
circuit
3.095
3.25
3.405
V
1
1.6
0.23
1.60
-V
DET
×0.05
10.0
0.50
3.70
±0.41
20.0
10.0
V
µA
V
mA
1
2
1
3
Temperature
characteristic of
-V
DET
V
DD
= 2.4 V
-20°C
≤
Ta
≤
75°C
mV/°C
7. S-806F (Detection voltage: 3.395 V to 3.705 V)
Table 9
Parameter
Detection
voltage
Hysteresis width
Current
consumption
Operating
voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
∆-V
DET
∆Ta
Nch
V
DS
= 0.5 V
V
DD
= 1.2 V
V
DD
= 4.5 V
Conditions
(Unless otherwise specified : Ta=25°C)
Test
Min.
Typ.
Max.
Unit
circuit
3.395
3.55
3.705
V
1
1.6
0.23
1.60
-V
DET
×0.05
10.0
0.50
3.70
±0.44
20.0
10.0
V
µA
V
mA
1
2
1
3
Temperature
characteristic of
-V
DET
V
DD
= 2.4 V
-20°C
≤
Ta
≤
75°C
mV/°C
4
Seiko Instruments Inc.
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