J.£ii£.u <^>£tni-Conauctoi \Pioaucti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BUX78
SILICON PLANAR EPITAXIAL PNP TRANSISTOR
ABSOLUTE MAXIMUM RATINGS(r
c
.2s-c«*»<**««.«M)
VCBO
VCEO
VEBO
ic
IB
PD
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Continuous Collector Current
Base Current
Total Power Dissipation at
Junction Temperature Range
Storage Temperature Range
TC = 25°C
Derate Above 25°C
-100V
-80V
-6V
5A
0.8A
40W
0.23W/°C
-65 to +200
P
C
-65 to -t-200°C
1
Mln. I Typ.
TJ
T
stg
THERMAL PROPERTIES
Symbols j Parameters
RgjC
] Thermal Resistance, Junction To Case
Max.
4.4
Units
°c/w
Units
ELECTRICAL CHARACTERISTICS
(T
c
=
25°C unless otherwise stated)
Symbols
,,
ni
(BR)CEO
v
Parameters
I Collector-Emitter
j Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Test Conditions
l
c
= -50mA
l
c
= -2mA
Min.
-80
-100
-6
Typ
Max.
IB - 0
V
BE
a 0
(BR)CES
w
V
v/DD\cDn
(onitau
ICEO
ICBO
I
E
= -1.0mA
l
c
=0
V
CE
= -60V
Vf-D = '80V
I
B
= 0
I
E
= 0
^.-__.____.___
-10
-0.5
I
IEBO
-150
MA
VEB = -w
l
c
= -0.5A
l
c
= -2A
l
c
= -5A
I
C
= - 1 0 A
i
c
- o
V
CE
= -5V
V
C£
= -5V
V
CE
= -5V
V
CE
--5V
T
c
= -40°C
-
50
50
30
25
-0.5
1
120
^
.1.
:
Forward-current transfer
: ratio
I-
CE(sat)
v
in
BE(sat)
v
Collector-Emitter Saturation
| voltage
Base-Emitter Saturation
voltage
I
C
= -5A
l
r
= -5A
I
B
»-0.5A
-1 0
I
..
I
B
=-0.5A
!
-1 3
DYNAMIC CHARACTERISTICS
|h
f
I
e
Small signal forward-current
i transfer ratio
I
C
= -0.5A
f = 20MHz
V
CE
= -5V
1.5
1
V
cc
= -40V
.4
MS
l
c
= -5A
I
B 1
=-0,5A
'off
i
: Turn-Off Time
l
c
= -5A
V
cc
= -40V
I
B
1 = IBS = - 0 5 A
1.1
2.5
Quality Semi-Conducfors
TO66
嵌入式系统
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