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BR5000W_05

产品描述SILICON BRIDGE RECTIFIERS
文件大小42KB,共2页
制造商EIC [EIC discrete Semiconductors]
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BR5000W_05概述

SILICON BRIDGE RECTIFIERS

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BR5000W - BR5010W
PRV : 50 - 1000 Volts
Io : 50 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
High case dielectric strength
SILICON BRIDGE RECTIFIERS
BR50W
0.732 (18.6)
0.692 (17.5)
1.130 (28.7)
1.120 (28.4)
0.470 (11.9)
0.430 (10.9)
0.21 (5.3)
0.20 (5.1)
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink
with silicone thermal compound between
bridge and mounting surface for maximum
heat transfer efficiency
* Weight : 15.95 grams
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.042 (1.06)
0.038 (0.96)
1.2 (30.5)
MIN.
0.310 (7.87)
0.280(7.11)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc=55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at I
F
= 25 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
BR
5000W
BR
5001W
BR
5002W
BR
5004W
BR
5006W
BR
5008W
BR
5010W
UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
It
V
F
I
R
I
R(H)
R
θ
JC
T
J
T
STG
2
50
35
50
100
70
100
200
140
200
400
280
400
50
400
664
1.1
10
200
1.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
AS
V
µA
µA
°C/W
°C
°C
2
Typical Thermal Resistance at Junction to Case ( Note 1 )
Operating Junction Temperature Range
Storage Temperature Range
- 40 to + 150
- 40 to + 150
Notes :
1 ) Thermal resistance from Junction to Case with units mounted on heat sink.
Page 1 of 2
Rev. 02 : March 24, 2005

BR5000W_05相似产品对比

BR5000W_05 BR5001W BR5004W BR5006W BR5008W BR5000W BR5002W BR5010W
描述 SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS
是否无铅 - 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 - 符合 符合 符合 符合 符合 符合 符合
厂商名称 - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
包装说明 - S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4
Reach Compliance Code - compli compli compli compliant compli compli compliant
其他特性 - HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
最小击穿电压 - 100 V 400 V 600 V 800 V 50 V 200 V 1000 V
外壳连接 - ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 - SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
最大正向电压 (VF) - 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 代码 - S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4
最大非重复峰值正向电流 - 400 A 400 A 400 A 400 A 400 A 400 A 400 A
元件数量 - 4 4 4 4 4 4 4
相数 - 1 1 1 1 1 1 1
端子数量 - 4 4 4 4 4 4 4
最高工作温度 - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 - -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
最大输出电流 - 50 A 50 A 50 A 50 A 50 A 50 A 50 A
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
参考标准 - TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949
最大重复峰值反向电压 - 100 V 400 V 600 V 800 V 50 V 200 V 1000 V
表面贴装 - NO NO NO NO NO NO NO
端子形式 - WIRE WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 - UPPER UPPER UPPER UPPER UPPER UPPER UPPER
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

 
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