19-4146; Rev 1; 9/08
125V/3A, High-Speed,
Half-Bridge MOSFET Drivers
General Description
The MAX15018A/MAX15018B/MAX15019A/MAX15019B
high-frequency, 125V half-bridge, n-channel MOSFET
drivers drive high- and low-side MOSFETs in high-volt-
age applications. These drivers are independently con-
trolled, and their 35ns (typ) propagation delay, from input
to output, are matched to within 2ns (typ). The high-volt-
age operation with very low and matched propagation
delay between drivers, and high source-/sink-current
capabilities in a thermally enhanced package make
these devices suitable for high-power, high-frequency
telecom power converters. The 125V maximum input
voltage provides plenty of margin over the 100V input
transient requirement of telecom standards. A reliable
on-chip bootstrap diode connected between V
DD
and
BST eliminates the need for an external discrete diode.
The MAX15018A/MAX15019A both offer noninverting dri-
vers. The MAX15018B/MAX15019B offer a noninverting
high-side driver and an inverting low-side driver (see the
Selector Guide.)
The MAX15018_ feature CMOS (V
DD
/2)
logic inputs. The MAX15019_ feature TTL-logic inputs.
The drivers are available in the industry-standard 8-pin
SO footprint and pin configuration with a thermally
enhanced 8-pin SO package. All devices operate over
the -40°C to +125°C automotive temperature range.
Features
o
HIP2100IB/HIP2101IB Pin Compatible
(MAX15018A/MAX15019A)
o
Up to 125V V
IN
Operation
o
8V to 12.6V V
DD
Input Supply Range
o
3A Peak Source and Sink Current
o
35ns Propagation Delay
o
Guaranteed 8ns or Less Propagation Delay
Matching Between High- and Low-Side Drivers
o
Both Noninverting/Noninverting and
Noninverting/Inverting Logic-Input Versions
Available
o
Up to 15V Logic Inputs, Independent of V
DD
Supply Voltage
o
Low 8pF Input Capacitance
o
Available in CMOS (V
DD
/2) or TTL Logic-Level
Inputs with Hysteresis
o
Available in a Space-Saving, Thermally Enhanced
8-Pin SO-EP Package
MAX15018/MAX15019
Ordering Information
PART
MAX15018AASA+
MAX15018BASA+
MAX15019AASA+
MAX15019BASA+
TEMP RANGE
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
PIN-PACKAGE
8 SO-EP*
8 SO-EP*
8 SO-EP*
8 SO-EP*
Applications
Telecom Power Supplies
Synchronous Buck DC-to-DC Converters
Half-Bridge, Full-Bridge, and Two-Switch
Forward Converters
Power-Supply Modules
Motor Control
+Denotes
a lead-free/RoHS-compliant package.
*EP
= Exposed pad. Internally connected to GND.
Typical Operating Circuit
V
IN
= 0 TO 125V
Pin Configuration
MAX15018A
MAX15019A
V
DD
= 8V TO
12.6V
BST
TOP VIEW
+
V
DD
1
BST 2
DH 3
HS 4
8 DL
PWM1
IN_H
C
BST
N
V
OUT
DH
HS
MAX15018A
MAX15018B
MAX15019A
MAX15019B
7 GND
6 IN_L
5 IN_H
PWM2
IN_L
V
DD
DL
GND
C
VDD
N
SO-EP
________________________________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
125V/3A, High-Speed,
Half-Bridge MOSFET Drivers
MAX15018/MAX15019
ABSOLUTE MAXIMUM RATINGS
V
DD
to GND ............................................................-0.3V to +15V
IN_H, IN_L to GND .................................................-0.3V to +15V
DL to GND ..................................................-0.3V to (V
DD
+ 0.3V)
DH to HS.....................................................-0.3V to (V
DD
+ 0.3V)
BST to HS ...............................................................-0.3V to +15V
HS to GND (repetitive transient)..............................-5V to +130V
HS dv/dt to GND................................................................50V/ns
*As
per JEDEC Standard 51 (Single-Layer Board).
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Continuous Power Dissipation (T
A
= +70°C)
Single and Multilayer Board
8-Pin SO-EP (derate 23.8mW/°C above +70°C)*..........1.904W
θ
JC
...................................................................................6°C/W
Operating Temperature .....................................-40°C to +125°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
ELECTRICAL CHARACTERISTICS
(V
DD
= V
BST
= 8V to 12.6V, V
HS
= V
GND
= 0V, T
A
= T
J
= -40°C to +125°C, unless otherwise noted. Typical values are at V
DD
= V
BST
= 12V and T
A
= +25°C.) (Note 1)
PARAMETER
POWER SUPPLY
Operating Supply Voltage
V
VDD
IN_H and IN_L are
unconnected (no
switching)
f
SW
= 500kHz, V
DD
= 12V,
no capacitive load
IN_H and IN_L are unconnected (no
switching)
f
SW
= 500kHz, V
BST
- V
HS
= 12V, no
capacitive load
V
DD
rising
6.5
6.2
MAX15018A/
MAX15018B
MAX15019A/
MAX15019B
8.0
65
95
2.75
95
2.75
7.3
6.9
0.5
0.67 x
V
DD
2
0.33 x
V
DD
0.8
1.65
0.4
V
V
12.6
130
µA
190
3.75
190
3.75
8
7.6
mA
µA
mA
V
V
V
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
V
DD
Quiescent Supply Current
I
DDQ
V
DD
Operating Supply Current
BST Quiescent Supply Current
BST Operating Supply Current
UVLO (V
DD
to GND)
UVLO (BST to HS)
UVLO Hysteresis
LOGIC INPUT
Input-Logic High
I
DDO
I
BSTQ
I
BSTO
V
DD_UVLO
V
BST_UVLO
V
BST
rising
V
IH
MAX15018A/MAX15018B (CMOS)
MAX15019A/MAX15019B (TTL)
V
Input-Logic Low
V
IL
MAX15018A/MAX15018B (CMOS)
MAX15019A/MAX15019B (TTL)
Logic-Input Hysteresis
V
HYS
MAX15018A/MAX15018B (CMOS)
MAX15019A/MAX15019B (TTL)
2
_______________________________________________________________________________________
125V/3A, High-Speed,
Half-Bridge MOSFET Drivers
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= V
BST
= 8V to 12.6V, V
HS
= V
GND
= 0V, T
A
= T
J
= -40°C to +125°C, unless otherwise noted. Typical values are at V
DD
= V
BST
= 12V and T
A
= +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
IN_H = IN_L = GND
(MAX15018A/MAX15019A)
Logic-Input Current
I
IN_
-1
IN_H = GND, IN_L = V
DD
(MAX15018B/MAX15019B)
IN_L to GND (MAX15018A/MAX15019A)
Input Resistance
Input Capacitance
HIGH-SIDE GATE DRIVER
HS Maximum Voltage
BST Maximum Voltage
V
HS_MAX
V
BST_MAX
R
ON_HP
Driver Output Resistance
R
ON_HN
Power-Off Pulldown Clamp
Voltage
Peak Output Current
LOW-SIDE GATE DRIVER
R
ON_LP
Driver Output Resistance
R
ON_LN
Power-Off Pulldown Clamp
Voltage
Peak Output Current
INTERNAL BOOTSTRAP DIODE
Forward Voltage Drop
Turn-On and Turn-Off Time
V
F
t
RR
I
BST
= 100mA
I
BST
= 100mA
0.9
40
1.1
V
ns
I
PK_LP
I
PK_LN
V
DD
= 12V,
I
DL
= 100mA (sourcing)
V
DD
= 12V,
I
DL
= 100mA (sinking)
T
A
= +25°C
T
A
= +125°C
T
A
= +25°C
T
A
= +125°C
1.75
2.3
1.1
1.6
0.88
3
3
2.4
3.0
1.75
2.25
1.2
V
A
Ω
I
PK_HP
I
PK_HN
(V
BST
- V
HS
) = 12V,
I
DH
= 100mA (sourcing)
(V
BST
- V
HS
) = 12V, I
DH
=
100mA (sinking)
T
A
= +25°C
T
A
= +125°C
T
A
= +25°C
T
A
= +125°C
125
140
1.75
2.3
1.1
1.6
0.88
3
3
2.4
3.0
1.75
2.25
1.2
V
A
Ω
V
V
R
IN_
C
IN_
IN_L to V
DD
(MAX15018B/MAX15019B)
IN_H to GND
8
pF
5001
kΩ
+1
µA
MIN
TYP
MAX
UNITS
MAX15018/MAX15019
V
BST
= 0V or unconnected, I
DH
= 1mA
(sinking)
V
DH
= 0V
V
DH
= 12V
V
DD
= 0V or unconnected, I
DL
= 1mA
(sinking)
V
DL
= 0V
V
DL
= 12V
_______________________________________________________________________________________
3
125V/3A, High-Speed,
Half-Bridge MOSFET Drivers
MAX15018/MAX15019
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= V
BST
= 8V to 12.6V, V
HS
= V
GND
= 0V, T
A
= T
J
= -40°C to +125°C, unless otherwise noted. Typical values are at V
DD
= V
BST
= 12V and T
A
= +25°C.) (Note 1)
PARAMETER
SYMBOL
No C
L
Rise Time
t
R
C
L
= 1000pF
C
L
= 5000pF
C
L
= 10,000pF
No C
L
Fall Time
t
F
C
L
= 1000pF
C
L
= 5000pF
C
L
= 10,000pF
Figure 1,
C
L
= 1000pF
(Note 2)
MAX15018A/
MAX15018B (CMOS)
MAX15019A/
MAX15019B (TTL)
MAX15018A/
MAX15018B (CMOS)
MAX15019A/
MAX15019B (TTL)
MAX15018A/
MAX15018B (CMOS)
MAX15019A/
MAX15019B (TTL)
MAX15018A/
MAX15018B (CMOS)
MAX15019A/
MAX15019B (TTL)
MAX15018A/
MAX15018B (CMOS)
MAX15019A/
MAX15019B (TTL)
MAX15018A/
MAX15018B (CMOS)
MAX15019A/
MAX15019B (TTL)
CONDITIONS
MIN
TYP
1
5
25
50
1
5
20
40
33
36
30
36
1
1
1
1
2
1
2
1
20
60
ns
66
55
ns
66
5
ns
6
5
ns
6
8
ns
6
8
ns
6
ns
ns
ns
MAX
UNITS
SWITCHING CHARACTERISTICS FOR HIGH- AND LOW-SIDE DRIVERS (V
DD
= V
BST
= +12V)
Turn-On Propagation Delay Time
t
D_ON
Turn-Off Propagation Delay Time
t
D_OFF
Figure 1,
C
L
= 1000pF
(Note 2)
Delay Matching Between High-Side
Turn-On to Low-Side Turn-On
t
MATCH1
C
L
= 1000pF
(Note 2)
Delay Matching Between High-Side
Turn-Off to Low-Side Turn-Off
t
MATCH2
C
L
= 1000pF
(Note 2)
Delay Matching Between High-Side
Turn-Off to Low-Side Turn-On
t
MATCH3
C
L
= 1000pF
(Note 2)
Delay Matching Between High-Side
Turn-On to Low-Side Turn-Off
Minimum Input Pulse Width for
Output Change
t
MATCH4
C
L
= 1000pF
(Note 2)
t
PW
Note 1:
All devices are 100% production tested at T
A
= T
J
= +125°C. Limits over temperature are guaranteed by design and char-
acterization.
Note 2:
Guaranteed by design, not production tested.
4
_______________________________________________________________________________________
125V/3A, High-Speed,
Half-Bridge MOSFET Drivers
Typical Operating Characteristics
(T
A
= +25°C, unless otherwise noted.)
MAX15018/MAX15019
V
DD
AND BST UNDERVOLTAGE LOCKOUT
vs. TEMPERATURE
MAX15018 toc01
V
DD
AND BST UNDERVOLTAGE LOCKOUT
HYSTERESIS vs. TEMPERATURE
MAX15018 toc02
UNDERVOLTAGE LOCKOUT RESPONSE
(V
DD
RISING)
12V
7.5
7.4
7.3
7.2
V
UVLO
(V)
7.1
7.0
6.9
6.8
6.7
6.6
6.5
V
BST
- V
HS
RISING
V
DD
RISING
0.60
0.58
0.56
HYSTERESIS (V)
0.54
0.52
0.50
0.48
0.46
0.44
0.42
0.40
V
BST
- V
HS
V
DD
MAX15018 toc03
V
DD
2V/div
7.3V
4V
V
DH
5V/div
V
DL
5V/div
-40 -25 -10 5 20 35 50 65 80 95 110 125
AMBIENT TEMPERATURE (°C)
-40 -25 -10 5 20 35 50 65 80 95 110 125
AMBIENT TEMPERATURE (°C)
40µs/div
UNDERVOLTAGE LOCKOUT RESPONSE
(V
DD
FALLING)
12V
MAX15018A I
DDO
+ I
BSTO
CURRENT
vs. V
DD
(250kHz SWITCHING)
MAX15018 toc05
INTERNAL BOOTSTRAP
DIODE I-V CHARACTERISTICS
180
160
DIODE CURRENT (mA)
140
120
100
80
60
40
20
0
T
A
= +125°C
T
A
= +150°C
T
A
= -40°C
T
A
= 0°C
T
A
= +25°C
MAX15018 toc06
MAX15018 toc04
5.0
4.5
4.0
I
DD
+ I
BST
(mA)
V
DD
2V/div
V
DD
= V
BST
200
6.8V
4V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
V
DD
(V)
V
DD
FALLING
V
DD
RISING
V
DH
5V/div
V
DL
5V/div
40µs/div
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
DD
- V
BST
(V)
MAX15018A V
DD
QUIESCENT CURRENT
vs. V
DD
(NO SWITCHING)
MAX15018 toc07
MAX15018A BST QUIESCENT CURRENT
vs. V
BST
(NO SWITCHING)
MAX15018 toc08
MAX15018A I
DD
AND I
BST
vs. SWITCHING FREQUENCY
V
DD
= V
BST
= 12V
NO LOAD
I
DD
MAX15018 toc09
160
140
120
I
DD
(µA)
100
80
60
40
20
V
DD
FALLING
140
120
100
I
BST
(µA)
80
V
BST
FALLING
6
5
SUPPLY CURRENT (mA)
4
3
2
1
0
T
A
= +150°C
T
A
= +125°C
T
A
= +125°C
T
A
= +25°C
60
T
A
= 0°C
40
20
T
A
= -40°C
I
BST
T
A
= -40°C, 0°C, +25°C
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
V
DD
(V)
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
V
BST
(V)
0
200
400
600
800
1000
SWITCHING FREQUENCY (kHz)
_______________________________________________________________________________________
5
测试/测量
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