DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG2031M16
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.8 dB TYP., G
a
= 17.0 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
NF = 1.3 dB TYP., G
a
= 10.0 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz
• Maximum stable power gain: MSG = 21.5 dB TYP. @ V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: V
CEO
(absolute maximum ratings) = 5.0 V
• 6-pin lead-less minimold (M16, 1208 PKG)
<R>
ORDERING INFORMATION
Part Number
NESG2031M16
Order Number
NESG2031M16-A
Package
6-pin lead-less minimold
(M16, 1208 PKG)
NESG2031M16-T3
NESG2031M16-T3-A
(Pb-Free)
Quantity
50 pcs
(Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 6 (Emitter) face the
perforation side of the tape
Remark
To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
2
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
13.0
5.0
1.5
35
175
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10394EJ03V0DS (3rd edition)
Date Published September 2009 NS
Printed in Japan
The mark <R> shows major revised points.
2003, 2009
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NESG2031M16
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Associated Gain (1)
Associated Gain (2)
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output Power
f
T
⏐S
21e
⏐
NF
NF
G
a
G
a
C
re
Note 2
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 2 V, I
C
= 5 mA
−
−
130
−
−
190
100
100
260
nA
nA
−
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 3 V, I
C (set)
= 20 mA (RF OFF),
f = 2 GHz, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
20
16.0
−
−
15.0
−
−
19.0
−
−
25
18.0
0.8
1.3
17.0
10.0
0.15
21.5
13
−
−
1.1
−
−
−
0.25
−
−
−
GHz
dB
dB
dB
dB
dB
pF
dB
dBm
MSG
Note 3
P
O (1 dB)
Output 3rd Order Intercept Point
OIP
3
V
CE
= 3 V, I
C (set)
= 20 mA (RF OFF),
f = 2 GHz, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
23
dBm
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
3.
MSG =
S
21
S
12
h
FE
CLASSIFICATION
<R>
Rank
Marking
h
FE
Value
FB/YFB
zF
130 to 260
2
Data Sheet PU10394EJ03V0DS
NESG2031M16
<R>
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
300
250
200
175
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
0.3
f = 1 MHz
0.2
150
100
50
0.1
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature T
A
(°C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
V
CE
= 1 V
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
V
CE
= 2 V
Collector Current I
C
(mA)
0.001
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
V
CE
= 3 V
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
30
25
20
15
10
5
I
B
= 20
μ
A
200
μ
A
180
μ
A
160
μ
A
140
μ
A
120
μ
A
100
μ
A
80
μ
A
60
μ
A
40
μ
A
Collector Current I
C
(mA)
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Voltage V
CE
(V)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10394EJ03V0DS
3
NESG2031M16
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 1 V
1 000
V
CE
= 2 V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain h
FE
100
DC Current Gain h
FE
100
10
0.1
1
10
100
10
0.1
1
10
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 3 V
DC Current Gain h
FE
100
10
0.1
1
10
100
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
4
Data Sheet PU10394EJ03V0DS
NESG2031M16
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
Gain Bandwidth Product f
T
(GHz)
V
CE
= 1 V,
f = 2 GHz
25
20
15
10
5
0
1
V
CE
= 2 V,
f = 2 GHz
25
20
15
10
5
0
1
10
Collector Current I
C
(mA)
100
10
Collector Current I
C
(mA)
100
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
25
20
15
|S
21e
|
2
10
5
0
0.1
1
10
100
MSG
MAG
V
CE
= 1 V,
I
C
= 10 mA
30
Gain Bandwidth Product f
T
(GHz)
25
20
15
10
5
0
1
V
CE
= 3 V,
f = 2 GHz
10
Collector Current I
C
(mA)
100
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
30
25
20
MAG
15
10
5
0
0.1
1
10
|S
21e
|
2
MSG
MAG
V
CE
= 2 V,
I
C
= 10 mA
40
35
30
MSG
25
20
15
10
5
0
0.1
1
10
MAG
|S
21e
|
2
MAG
V
CE
= 3 V,
I
C
= 10 mA
MSG
MSG
100
100
Frequency f (GHz)
Frequency f (GHz)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10394EJ03V0DS
5
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