DATA SHEET
SILICON POWER MOS FET
NE5500234
N-CHANNEL SILICON POWER MOS FET
POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
DESCRIPTION
The NE5500234 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
for DCS1800 and PCS1900 handsets. Dies are manufactured using our NEWMOS technology (our 0.6
μ
m WSi gate
lateral MOS FET), housed in a surface mount 3-pin power Minimold (34 PKG) (SOT-89 type) package. The device
can deliver 32.5 dBm output power with 50% power added efficiency at 1.9 GHz under the 4.8 V supply voltage.
FEATURES
• High output power
• High linear gain
• Surface mount package
• Single supply
: P
out
= 32.5 dBm TYP. (V
DS
= 4.8 V, I
Dset
= 400 mA, f = 1.9 GHz, P
in
= 25 dBm)
: G
L
= 11 dB TYP. (V
DS
= 4.8 V, I
Dset
= 400 mA, f = 1.9 GHz)
: 3-pin power Minimold (34 PKG) (SOT-89 type)
: V
DS
= 3.0 to 6.0 V
• High power added efficiency :
η
add
= 50% TYP. (V
DS
= 4.8 V, I
Dset
= 400 mA, f = 1.9 GHz, P
in
= 25 dBm)
APPLICATIONS
• Digital cellular phones
<R>
• Handheld transceiver
• Others
<R>
: DCS1800/PCS1900 handsets
: FRS (Family Radio Service), GMRS (General Mobile Radio Service)
: General purpose amplifiers for various applications
ORDERING INFORMATION
Part Number
NE5500234
Order Number
NE5500234-AZ
Package
3-pin power minimold
(SOT-89, Our code: 34)
(Pb-Free : External
solder plating)
NE5500234-T1
NE5500234-T1-AZ
3-pin power minimold
(SOT-89, Our code: 34)
(Pb-Free : External
solder plating)
• 12 mm wide embossed taping
• Source pin face the perforation side of the tape
• Qty 1 kpcs/reel
Marking
V2
• Magazine case
• Qty 25 pcs/case
Supplying Form
Remarks 1.
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE5500234
2.
This product is containing Pb-material inside.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10405EJ02V0DS (2nd edition)
Date Published August 2007 NS
Printed in Japan
The mark <R> shows major revised points.
2004, 2007
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NE5500234
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
P
tot
T
ch
T
stg
Ratings
20
6.0
1.0
10
125
−65
to +125
Unit
V
V
A
W
°C
°C
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Symbol
V
DS
V
GS
I
D
P
in
Duty Cycle
≤
50%, T
on
≤
1 s
f = 1.9 GHz, V
DS
= 4.8 V
Test Conditions
MIN.
3.0
0
−
−
TYP.
4.8
2.0
0.75
−
MAX.
6.0
3.5
1.0
27
Unit
V
V
A
dBm
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise specified, using our standard test fixture.)
Parameter
Gate to Source Leakage Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Thermal Resistance
Transconductance
Drain to Source Breakdown Voltage
Output Power
Drain Current
Power Added Efficiency
Linear Gain
Note
Symbol
I
GSO
I
DSS
V
th
R
th
g
m
BV
DSS
P
out
I
D
V
GS
= 6.0 V
V
DS
= 8.5 V
Test Conditions
MIN.
−
−
1.0
−
−
20
31.5
−
43
−
TYP.
−
−
1.4
10
840
24
32.5
610
50
11.0
MAX.
100
100
2.0
−
−
−
−
−
−
−
Unit
nA
nA
V
°C/W
mS
V
dBm
mA
%
dB
V
DS
= 4.8 V, I
DS
= 1 mA
Channel to Case
V
DS
= 4.8 V, I
DS
= 500 mA
I
DSS
= 10
μ
A
f = 1.9 GHz, V
DS
= 4.8 V,
P
in
= 25 dBm,
I
Dset
= 400 mA (RF OFF)
η
add
G
L
Note
P
in
= 10 dBm
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2
Data Sheet PU10405EJ02V0DS
NE5500234
<R>
TYPICAL CHARACTERISTICS (T
A
= +25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
7
6
Drain Current I
D
(A)
SET DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
10 000
V
DS
= 3.5 V
Set Drain Current I
Dset
(mA)
V
GS
= 10 V MAX.
Step = 1.0 V
V
GS
= 10 V
9V
8V
7V
6V
5V
4V
1 000
5
4
3
2
100
3V
1
2V
0
0
2
4
6
8
10
12
14
16
10
1
1.0
1.5
2.0
2.5
3.0
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
OUTPUT POWER, EFFICIENCY
vs. INPUT POWER
40
f = 460 MHz
V
DS
= 6.0 V
4.8 V
3.8 V
1 000
DRAIN CURRENT vs. INPUT POWER
f = 460 MHz
V
DS
= 6.0 V
Drain Current I
D
(mA)
Output Power P
out
(dBm)
35
800
P
out
4.8 V
3.8 V
30
Efficiency
η
(%)
600
25
100
400
η
20
50
200
15
0
5
10
15
20
25
0
30
0
0
5
10
15
20
25
30
Input Power P
in
(dBm)
Input Power P
in
(dBm)
OUTPUT POWER, EFFICIENCY
vs. INPUT POWER
40
35
30
25
20
15
10
5
0
5
10
15
20
25
f = 915 MHz
V
DS
= 6.0 V
4.8 V
3.8 V
P
out
DRAIN CURRENT vs. INPUT POWER
1 200
f = 915 MHz
1 000
Efficiency
η
(%)
V
DS
= 6.0 V
4.8 V
3.8 V
Output Power P
out
(dBm)
100
80
60
Drain Current I
D
(mA)
800
600
400
200
0
0
η
40
20
0
30
5
10
15
20
25
30
Input Power P
in
(dBm)
Input Power P
in
(dBm)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10405EJ02V0DS
3
NE5500234
OUTPUT POWER vs. INPUT POWER
35
f = 1.9 GHz
V
DS
= 4.8 V
I
Dset
= 400 mA
V
DS
= 3.8 V
I
Dset
= 200 mA
800
DRAIN CURRENT vs. INPUT POWER
f = 1.9 GHz
Output Power P
out
(dBm)
Drain Current I
D
(mA)
30
600
V
DS
= 4.8 V
I
Dset
= 400 mA
400
V
DS
= 3.8 V
I
Dset
= 200 mA
200
25
20
15
10
5
10
15
20
25
30
0
5
10
15
20
25
30
Input Power P
in
(dBm)
Input Power P
in
(dBm)
POWER ADDED EFFICIENCY vs. INPUT POWER
100
Power Added Efficiency
η
add
(%)
f = 1.9 GHz
80
60
V
DS
= 3.8 V
I
Dset
= 200 mA
40
20
V
DS
= 4.8 V
I
Dset
= 400 mA
10
15
20
25
30
0
5
Input Power P
in
(dBm)
Remark
The graphs indicate nominal characteristics.
4
Data Sheet PU10405EJ02V0DS
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