Power Field-Effect Transistor, 86A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, MP-25SK, TO-262, 3 PIN
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | NEC(日电) |
| 包装说明 | LEAD FREE, MP-25SK, TO-262, 3 PIN |
| Reach Compliance Code | compliant |
| 雪崩能效等级（Eas） | 580 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 40 V |
| 最大漏极电流 (ID) | 86 A |
| 最大漏源导通电阻 | 0.0044 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-262AA |
| JESD-30 代码 | R-PSIP-T3 |
| JESD-609代码 | e3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 344 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | MATTE TIN |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| NP86N04NHE-S18-AY | NP86N04CHE-S12-AZ | 2GBJ005_17 | NP86N04EHE-E2-AY | NP86N04EHE-E1-AY | NP86N04KHE-E2-AY | NP86N04DHE-S12-AY | NP86N04MHE-S18-AY | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 86A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, MP-25SK, TO-262, 3 PIN | Power Field-Effect Transistor, 86A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-25, TO-220, 3 PIN | GLASS PASSIVATED BRIDGE RECTIFIERS | Power Field-Effect Transistor, 86A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZJ, TO-263, 3 PIN | Power Field-Effect Transistor, 86A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZJ, TO-263, 3 PIN | Power Field-Effect Transistor, 86A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZK, TO-263, 3 PIN | Power Field-Effect Transistor, 86A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, MP-25, TO-262, 3 PIN | Power Field-Effect Transistor, 86A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-25K, TO-220, 3 PIN |
| 厂商名称 | NEC(日电) | NEC(日电) | - | NEC(日电) | NEC(日电) | NEC(日电) | NEC(日电) | NEC(日电) |
| 包装说明 | LEAD FREE, MP-25SK, TO-262, 3 PIN | LEAD FREE, MP-25, TO-220, 3 PIN | - | LEAD FREE, MP-25ZJ, TO-263, 3 PIN | LEAD FREE, MP-25ZJ, TO-263, 3 PIN | LEAD FREE, MP-25ZK, TO-263, 3 PIN | LEAD FREE, MP-25, TO-262, 3 PIN | LEAD FREE, MP-25K, TO-220, 3 PIN |
| Reach Compliance Code | compliant | unknown | - | unknown | unknown | unknown | unknown | compliant |
| 雪崩能效等级（Eas） | 580 mJ | 580 mJ | - | 580 mJ | 580 mJ | 580 mJ | 580 mJ | 580 mJ |
| 外壳连接 | DRAIN | DRAIN | - | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 40 V | 40 V | - | 40 V | 40 V | 40 V | 40 V | 40 V |
| 最大漏极电流 (ID) | 86 A | 86 A | - | 86 A | 86 A | 86 A | 86 A | 86 A |
| 最大漏源导通电阻 | 0.0044 Ω | 0.0044 Ω | - | 0.0044 Ω | 0.0044 Ω | 0.0044 Ω | 0.0044 Ω | 0.0044 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-262AA | TO-220AB | - | TO-263AB | TO-263AB | TO-263AB | TO-262AA | TO-220AB |
| JESD-30 代码 | R-PSIP-T3 | R-PSFM-T3 | - | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSIP-T3 | R-PSFM-T3 |
| JESD-609代码 | e3 | e1 | - | e3 | e3 | e3 | e3 | e3 |
| 元件数量 | 1 | 1 | - | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | - | 2 | 2 | 2 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | FLANGE MOUNT | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 344 A | 344 A | - | 344 A | 344 A | 344 A | 344 A | 344 A |
| 认证状态 | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | - | YES | YES | YES | NO | NO |
| 端子面层 | MATTE TIN | TIN SILVER COPPER | - | TIN | TIN | TIN | TIN | MATTE TIN |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | - | GULL WING | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
