Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, 3 PIN
| 参数名称 | 属性值 |
| 厂商名称 | NEC(日电) |
| 包装说明 | TO-126, 3 PIN |
| Reach Compliance Code | unknown |
| 外壳连接 | COLLECTOR |
| 最大集电极电流 (IC) | 2 A |
| 集电极-发射极最大电压 | 80 V |
| 配置 | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| 最小直流电流增益 (hFE) | 2000 |
| JESD-30 代码 | R-PSFM-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | NPN |
| 功耗环境最大值 | 20 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| VCEsat-Max | 1.5 V |
| NTD986 | NTD985 | |
|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, 3 PIN | Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, 3 PIN |
| 厂商名称 | NEC(日电) | NEC(日电) |
| 包装说明 | TO-126, 3 PIN | TO-126, 3 PIN |
| Reach Compliance Code | unknown | unknown |
| 外壳连接 | COLLECTOR | COLLECTOR |
| 最大集电极电流 (IC) | 2 A | 2 A |
| 集电极-发射极最大电压 | 80 V | 60 V |
| 配置 | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| 最小直流电流增益 (hFE) | 2000 | 2000 |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 |
| 元件数量 | 1 | 1 |
| 端子数量 | 3 | 3 |
| 最高工作温度 | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | NPN | NPN |
| 功耗环境最大值 | 20 W | 20 W |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON |
| VCEsat-Max | 1.5 V | 1.5 V |
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