电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

NSR0230P2T5G_09

产品描述0.2 A, 30 V, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小83KB,共3页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 全文预览

NSR0230P2T5G_09概述

0.2 A, 30 V, SILICON, SIGNAL DIODE

0.2 A, 30 V, 硅, 信号二极管

NSR0230P2T5G_09规格参数

参数名称属性值
端子数量2
元件数量1
加工封装描述LEAD FREE, MINIATURE, PLASTIC, CASE 514AA-01, 2 PIN
无铅Yes
欧盟RoHS规范Yes
中国RoHS规范Yes
状态ACTIVE
包装形状RECTANGULAR
包装尺寸LONG FORM
表面贴装Yes
端子形式WRAP AROUND
端子涂层MATTE TIN
端子位置END
包装材料PLASTIC/EPOXY
工艺SCHOTTKY
结构SINGLE
二极管元件材料SILICON
最大功耗极限0.2000 W
二极管类型SIGNAL DIODE
最大重复峰值反向电压30 V
最大平均正向电流0.2000 A

文档预览

下载PDF文档
NSR0230P2, NSVR0230P2,
Schottky Barrier Diode
These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
Features
http://onsemi.com
Extremely Fast Switching Speed
Extremely Low Forward Voltage 0.325 V (max) @ I
F
= 10 mA
Low Reverse Current
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current DC
Forward Current Surge Peak
(60 Hz, 1 cycle)
ESD Rating: Class 3B per Human Body Model
ESD Rating:
Class C per Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Symbol
V
R
I
F
I
FSM
Value
30
200
1.0
Unit
Vdc
mA
A
2
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
MARKING
DIAGRAM
1
K MG
G
SOD−923
CASE 514AA
1
2
K = Specific Device Code*
(Character is rotated 270° clockwise)
M = Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage
Temperature Range
1. FR−5 Minimum Pad.
Symbol
P
D
Max
200
2.0
R
qJA
T
J
, T
stg
600
−55
to
+125
Unit
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
NSR0230P2T5G
Package
SOD−923
(Pb−Free)
Shipping†
2 mm Pitch
8000/Tape & Reel
2 mm Pitch
8000/Tape & Reel
NSVR0230P2T5G SOD−923
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Leakage
(V
R
= 10 V)
Forward Voltage
(I
F
= 10 mA)
(I
F
= 200 mA)
Symbol
I
R
V
F
Min
Typ
Max
10
Unit
mA
Vdc
0.325
0.500
©
Semiconductor Components Industries, LLC, 2013
September, 2013
Rev. 2
1
Publication Order Number:
NSR0230P2/D

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2685  2475  2487  1979  1517  51  32  12  6  43 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved