3400mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
| 参数名称 | 属性值 |
| 厂商名称 | Texas Instruments(德州仪器) |
| 包装说明 | SMALL OUTLINE, R-PDSO-G8 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V |
| 最大漏极电流 (ID) | 3.4 A |
| 最大漏源导通电阻 | 0.13 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PDSO-G8 |
| 元件数量 | 1 |
| 端子数量 | 8 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | P-CHANNEL |
| 功耗环境最大值 | 1 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| NDS9400A/L86Z | NDS9400A/S62Z | NDS9400A | NDS9400A/D84Z | NDS9400A/L99Z | |
|---|---|---|---|---|---|
| 描述 | 3400mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | 3400mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | 3400mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | 3400mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | 3400mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 厂商名称 | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) |
| 包装说明 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 配置 | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V | - | 30 V | 30 V | 30 V |
| 最大漏极电流 (ID) | 3.4 A | - | 3.4 A | 3.4 A | 3.4 A |
| 最大漏源导通电阻 | 0.13 Ω | - | 0.13 Ω | 0.13 Ω | 0.13 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PDSO-G8 | - | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 |
| 元件数量 | 1 | - | 1 | 1 | 1 |
| 端子数量 | 8 | - | 8 | 8 | 8 |
| 工作模式 | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | - | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | P-CHANNEL | - | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 功耗环境最大值 | 1 W | - | 1 W | 1 W | 1 W |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | - | YES | YES | YES |
| 端子形式 | GULL WING | - | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | - | DUAL | DUAL | DUAL |
| 晶体管应用 | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON |
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