PRELIMINARY DATA SHEET
140 W S-BAND TWIN POWER GaAs MESFET
NES2427P-140
FEATURES
•
•
•
•
HIGH OUTPUT POWER:
140 W TYP
HIGH LINEAR GAIN:
9.5 dB TYP
HIGH EFFICIENCY:
41% TYP
USABLE IN BALANCED OR PUSH-PULL
CONFIGURATION.
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE T-92
9.7
±
0.3
R1.2
±
0.3
2.4
±
0.3
45°
3.0
±
0.4
45°
G1
G2
DESCRIPTION
The NES2427P-140 is a "twin" transistor device consisting of
two pairs of GaAs MESFET chips which may be combined
externally in either balanced or push-pull configurations. It is
designed for mobile and fixed wireless (WLL) systems, and
with modification of the external matching circuit, can be used
for 2.1-2.6 GHz applications. It is capable of delivering 140 W
of output power (CW) with high gain, high efficiency and
excellent linearity. The device employs 0.9
µm
Tungsten
Silicide gates, via holes, plated heat sink, and silicon dioxide
and nitride passivation for superior performance, thermal char-
acteristics, and reliability.
Reliability and performance uniformity are assured by NEC's
stringent quality control procedures.
8.0
±
0.3
S
S
17.4
±
0.3
D1
4.0
±
0.3
D2
3.0
±
0.4
31.6
±
0.3
35.2
±
0.3
24.6
±
0.3
4.75 MAX
2.4
±
0.2
1.8
±
0.2
G1, G2 : Gate
D1, D2 : Drain
S : Source
= 40°C)
NES2427P-140
T-92
UNITS
dBm
dB
%
A
A
V
K/W
-4.0
MIN
50.5
8.5
TYP
51.5
9.5
41
23
76
-2.6
0.4
0.55
MAX
TEST CONDITIONS
V
DS
= 12 V
f = 2.40 GHz
I
DSQ
= 6.0 A Total (RF off)
P
IN
= 44.5 dBm
R
G1
= 5.0
Ω
(Each Side)
V
DS
= 2.5 V; V
GS
= 0 V
V
DS
= 2.5 V; I
DS
= 330 mA
T
F
= 25°C; V
DS
= 12 V;
I
DS
= 8.0 A
ELECTRICAL AND THERMAL CHARACTERISTICS
(T
F
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
Output Power
Linear Gain
Power-Added Efficiency
Drain Current
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance Channel-to-Flange
Functional
Characteristics
P
OUT
G
L
η
ADD
I
D
Electrical DC
Characteristics
I
DSS
V
P
R
TH2
Notes:
1. R
G
is the series resistance between the gate supply and the FET gate.
2. To calculate R
TH
versus T
F
and T
CH
(or P
DISS
), see AN1032 "Microwave Power GaAs Device Thermal Resistance Basics" application note.
For the initial values use: R
TH1
= 0.55 K/W, T
F1
= 25˚C, T
CH1
= 77.8˚C and for R
F
use R
F
= 0.18 K/W.
California Eastern Laboratories
NES2427P-140
ABSOLUTE MAXIMUM RATINGS
1
(T
F
= 25°C)
SYMBOLS
V
DS
V
GSO
V
GDO
I
D
I
G
P
T
T
CH
T
STG
PARAMETERS
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
UNITS
V
V
V
A
mA
W
°C
°C
RATINGS
19
-7
-22
76
±440
237
175
-65 to +175
RECOMMENDED OPERATING LIMITS
SYMBOLS
V
DS
G
COMP
T
CH
I
DSQ
P
DISS
R
G
PARAMETERS
Drain to Source Voltage
Gain Compression
Channel Temperature
Quiescent Drain Current
1
Dissapated Power
Gate Resistance
2
UNITS MIN
V
dB
°C
A
W
Ω
see
see
5
TYP MAX
12
12
3
150
note
3
note
3
12.5
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
Notes:
1. V
DS
= 12 V, RF OFF, I
DSQ
= 3.0 A Each Drain.
2. R
G
is the series resistance for each side between the gate supply
and the FET gate.
3. See Maximum Power Dissipation vs. Flange Temperature Curve
ORDERING INFORMATION
PART NUMBER
NES2427P-140
PACKAGE
T-92
TYPICAL PERFORMANCE CURVES
(T
F
= 40˚C)
OUTPUT POWER AND I
DS
vs.
INPUT POWER
53
52
I
DS
at 2.4 GHz
P
OUT
at 2.4GHz
37
34
31
P-2dB AND G-2dB vs.
FREQUENCY
52.0
51.5
51.0
11
10
9
G-2dB
Output Power, P
OUT
(dBm)
P-2dB
51
50
49
48
47
46
45
44
34
35
36
37
38
39
40
41
42
43
44
V
DS
= 12.0 V,
I
DSQ
= 6.0 A
I
DS
P
OUT
P-2dB (dBm)
28
25
22
19
16
13
10
50.0
49.5
49.0
48.5
48.0
2.3
2.35
2.4
2.45
2.5
P-2dB
G-2dB
7
6
5
4
3
V
DS
= 12.0 V,
I
DSQ
= 6.0 A
Input Power, P
IN
(dBm)
Frequency, f (GHz)
INTERMODULATION DISTORTION vs.
OUTPUT POWER
IMD3 vs.
P
OUT
EACH TONE & I
DSQ
Third Order Intermodulation Distortion, IM
3
(dBc)
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
28
Intermodulation Distortion, IMD (dBc)
V
DS
= 12.0 V,
I
DSQ
= 6.0 A
-20
IMD3
-30
IMD3 at 12V 2A
IMD3 at 12V 3A
IMD3 at 12V 4A
IMD3 at 12V 5A
IMD3 at 12V 6A
IMD3 at 12V 7A
IMD3 at 12V 8A
IMD5
-40
IMD7
-50
IMD3 at 2.4 GHz
-60
IMD5 at 2.4 GHz
IMD7 at 2.4 GHz
-70
35
37
39
41
43
45
47
33
38
43
48
Output Power, P
OUT
(dBm) Each Tone
Output Power, P
OUT
(dBm) Each Tone
G-2dB (dB)
50.5
8
I
DS
(A)
NES2427P-140
TYPICAL PERFORMANCE CURVES
(T
F
= 40˚C)
MAXIMUM POWER DISSIPATION vs.
FLANGE TEMPERATURE
250
Maximum Power Dissipation, P
DISS
(W)
225
200
175
150
125
100
75
50
25
0
-50
-25
0
25
50
75
100
125
150
Flange Temperature, T
F
(˚C)
TYPICAL SCATTERING PARAMETERS,
(FOR
EACH SIDE)
V
DS
= 12 V, I
DS
= 3.0 A, Z
O
= 50
Ω,
T
F
= 25
°
C
FREQUENCY
(GHz)
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
MAG
0.922
0.896
0.859
0.786
0.638
0.334
0.224
0.604
0.766
0.817
0.812
0.775
0.641
0.424
0.132
0.278
0.549
0.707
0.784
0.813
0.807
S
11
ANG(°)
153.4
149.1
143.5
135.3
123.7
110.1
-147.0
-158.5
-175.0
172.9
162.4
151.3
138.5
125.0
141.9
-131.4
-141.4
-154.9
-166.3
-176.6
173.1
MAG
0.770
0.934
1.178
1.514
2.115
2.932
3.416
3.036
2.509
2.156
1.999
1.986
2.023
2.110
2.052
1.837
1.491
1.209
1.014
0.891
0.733
S
21
ANG(°)
-29.0
-41.6
-56.7
-73.3
-96.0
-128.5
-171.6
148.5
119.3
96.8
76.7
56.4
32.9
5.5
-26.1
-58.0
-87.5
-111.8
-134.0
-156.0
177.1
MAG
0.005
0.006
0.007
0.008
0.011
0.017
0.022
0.023
0.022
0.022
0.023
0.027
0.032
0.038
0.041
0.040
0.037
0.032
0.029
0.031
0.033
S
12
ANG(°)
-29.8
-41.6
-60.4
-90.0
-118.6
-161.2
145.4
97.8
61.7
35.9
14.4
-7.1
-31.1
-58.6
-90.2
-120.1
-146.9
-167.4
178.8
164.6
135.2
MAG
0.892
0.881
0.860
0.857
0.846
0.793
0.677
0.608
0.609
0.624
0.638
0.650
0.668
0.700
0.751
0.774
0.752
0.724
0.664
0.586
0.489
S
22
ANG(°)
162.6
160.8
159.0
158.2
154.5
149.5
148.0
154.2
159.7
162.7
164.0
165.4
165.9
166.5
164.0
158.4
152.8
146.5
139.3
131.8
129.8
NES2427P-140
HALF (EACH SIDE) DEVICE OPTIMAL INPUT AND OUTPUT IMPEDANCES FOR P-2dB
(at V
DS
= 12 V and I
DS
= 3.0 A half of the device)
Frequency
(GHz)
2.08
2.11
2.14
2.17
2.20
2.25
2.30
2.35
2.40
R
IN
(Ohm)
35.7
32.1
27.7
33.5
26.0
11.8
13.9
10.3
10.0
X
IN
(Ohm)
-0.78
8.8
6.2
-5.8
1.6
-2.0
-1.3
-1.6
0.82
R
OUT
(Ohm)
12.3
10.7
14.1
11.4
12.4
9.2
8.6
8.2
7.4
X
OUT
(Ohm)
8.9
3.1
3.1
2.1
0.4
1.7
4.1
4.9
1.8
P-2dB
(dBm)
48.8
48.9
49.0
49.0
48.9
49.3
49.2
49.1
49.0
Z
IN
G
D
Z
OUT
Ground
Z
IN
= R
IN
+ jX
IN
(Conjugate of source impedance).
Z
OUT
= R
OUT
+ jX
OUT
(Conjugate of load impedance).
Z
IN
is the optimal gate-to-ground input impedance of half of the
device.
Z
OUT
is the optimal drain-to-ground output impedance of half of
the device.
The input circuit is optimized for input return loss and tthe
output circuit is optimized for P-2dB.
Z
IN
G
D
Z
OUT
Ground
HALF (EACH SIDE) DEVICE OPTIMAL INPUT AND OUTPUT IMPEDANCES FOR CDMA SIGNAL
(at V
DS
= 12 V and I
DSQ
= 1.5 A half of the device)
Frequency
R
IN
X
IN
R
OUT
X
OUT
ACPR at 5 MhHz
(GHz)
(Ohm) (Ohm) (Ohm) (Ohm)
(dBm)
2.08
2.11
2.14
2.17
2.20
2.25
2.30
2.35
2.40
2.45
35.7
32.1
27.7
33.5
26.0
17.1
7.3
7.4
6.4
8.2
-0.78
8.8
6.2
-5.8
1.6
9.9
6.6
5.5
5.4
4.9
12.3
10.7
14.1
11.4
12.4
8.3
5.2
5.2
5.7
10.4
8.9
3.1
3.1
2.1
0.4
3.1
6.7
5.3
4.1
6.5
-31.1
---
-30.0
-30.0
-30.5
-34.0
-34.1
-32.8
-32.5
-32.8
Z
IN
Z
OUT
Ground
G
D
Ground
Z
IN
G
D
Z
OUT
Z
IN
= R
IN
+ jX
IN
(Conjugate of source impedance).
Z
OUT
= R
OUT
+ jX
OUT
(Conjugate of load impedance).
Z
IN
is the optimal gate-to-ground input impedance of half of the device.
Z
OUT
is the optimal drain-to-ground output impedance of half of the device.
The input circuit is optimized for input return loss and the output circuit is optimized
for ACPR of CDMA signal.
CDMA signal description:
CDMA SIGNAL WALSH CODE
1
2
3
4
5
6
7
8
9
10
11
12
0
1
8
9
10
11
12
13
14
15
16
32
CHANNEL TYPE
Pilot
Paging
Traffic
Traffic
Traffic
Traffic
Traffic
Traffic
Traffic
Traffic
Traffic
Sync
POWERLEVEL (dB)
-7.00
-12.96
-15.96
-15.96
-15.96
-15.96
-15.96
-15.96
-15.96
-15.96
-15.96
-13.26
Chip Rate: 8.192 Mcps
Total average output power for half device is 39 dBm.
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
•
Headquarters
•
4590 Patrick Henry Drive
•
Santa Clara, CA 95054-1817
•
(408) 988-3500
•
Telex 34-6393
•
FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only)
•
Internet: http://WWW.CEL.COM
03/09/2000
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