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DATA SHEET
SILICON POWER MOS FET
NE5500479A
3.5 V OPERATION SILICON RF POWER LDMOS FET
FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6
µ
m WSi gate laterally diffused
MOS FET) and housed in a surface mount package. The device can deliver 31.5 dBm output power with 62% power
added efficiency at 900 MHz as AMPS final output stage amplifier under the 3.5 V supply voltage. It also can deliver
35 dBm output power with 62% power added efficiency at 4.8 V, as GSM 900 class 4 final stage amplifiers.
FEATURES
• High output power
• High linear gain
• Surface mount package
• Single supply
: P
out
= 31.5 dBm TYP. (V
DS
= 3.5 V, I
Dset
= 300 mA, f = 900 MHz, P
in
= 20 dBm)
: G
L
= 15.0 dB TYP. (V
DS
= 3.5 V, I
Dset
= 300 mA, f = 900 MHz, P
in
= 10 dBm)
: 5.7
×
5.7
×
1.1 mm MAX.
: V
DS
= 3.0 to 8.0 V
• High power added efficiency :
η
add
= 62% TYP. (V
DS
= 3.5 V, I
Dset
= 300 mA, f = 900 MHz, P
in
= 20 dBm)
APPLICATIONS
• Analog cellular phones
• Digital cellular phones
• Others
: 3.5 V AMPS handsets
: 4.8 V GSM 900 class 4 handsets
: General purpose amplifiers for 800 to 1 000 MHz TDMA applications
ORDERING INFORMATION
Part Number
NE5500479A-T1
Package
79A
Marking
R4
Supplying Form
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE5500479A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10119EJ03V0DS (3rd edition)
Date Published July 2003 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 1999, 2003
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