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NCE7580D
NCE N-Channel
Enhancement Mode Power MOSFET
DESCRIPTION
The NCE7580D uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
GENERAL FEATURES
●
V
DS
= 75V,I
D
=80A
R
DS(ON)
<8mΩ @ V
GS
=10V（Typ：6.5mΩ）
●
Special process technology for high ESD capability
●
Special designed for Convertors and power controls
●
High density cell design for ultra low Rdson
●
Fully characterized Avalanche voltage and current
●
Good stability and uniformity with high E
AS
●
Excellent package for good heat dissipation
Marking and pin Assignment
Schematic diagram
Application
●
●
●
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
TO-263-2L top view
Package Marking And Ordering Information
Device Marking
NCE7580D
Device
NCE7580D
Device Package
TO-263-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Peak diode recovery voltage
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
E
AS
Limit
75
±25
80
78
320
30
170
1.13
580
-55 To 175
Unit
V
V
A
A
A
W
V/ns
W/℃
mJ
℃
I
D
I
D
(100℃)
I
DM
P
D
dv/dt
T
J
,T
STG
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Thermal Characteristic
Thermal Resistance,Junction-to- Case (Note 2)
R
θJc
NCE7580D
0.88
℃
/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min
75
Typ
Max
Unit
V
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
I
S
t
rr
Qrr
t
on
V
GS
=0V I
D
=250μA
V
DS
=100V,V
GS
=0V
V
GS
=±25V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=30A
V
DS
=5V,I
D
=30A
1
±100
2
2.85
6.5
60
3050
280
130
15
4
8
μA
nA
V
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
DS
=50V,V
GS
=0V,
F=1.0MHz
V
DD
=30V,I
D
=2A,R
L
=15Ω
V
GS
=10V,R
G
=2.5Ω
90
40
95
56
12
16
1.2
80
50
48
V
DS
=24V,I
D
=40A,
V
GS
=10V
V
GS
=0V,I
S
=40A
TJ = 25°C, IF = 75A
di/dt = 100A/μs(Note3)
V
A
nS
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
5.
EAS condition：Tj=25℃,V
DD
=50V,V
G
=10V,L=0.3mH,Rg=62Ω
Wuxi NCE Power Semiconductor Co., Ltd
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NCE7580D
Test circuit
1）E
AS
test Circuits
2）Gate charge test Circuit:
3）Switch Time Test Circuit：
Wuxi NCE Power Semiconductor Co., Ltd
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NCE7580D
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. R
DS(ON)
vs Junction Temperature
Wuxi NCE Power Semiconductor Co., Ltd
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Figure7. BV
DSS
vs Junction Temperature
NCE7580D
Figure8. V
GS(th)
vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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