NCE7560K
http://www.ncepower.com
Pb-Free Product
NCE N-Channel
Enhancement Mode Power MOSFET
General Description
The NCE7560K uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. It can be used in a wide variety of applications.
I
D
Product Summary
BV
DSS
R
DS(ON)
typ.
typ.
max.
84
6.8
8.0
60
V
mΩ
mΩ
A
Features
●
V
DS
=75V；I
D
=60A@ V
GS
=10V；
R
DS(ON)
<8mΩ @ V
GS
=10V
●
Special process technology for high ESD capability
●
Special designed for Convertors and power controls
●
High density cell design for ultra low Rdson
●
Fully characterized Avalanche voltage and current
●
Good stability and uniformity with high E
AS
●
Excellent package for good heat dissipation
100% UIS TESTED!
Application
●
●
●
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
TO-252-2L top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
NCE7560K
Device
NCE7560K
Device Package
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Table 1.
Absolute Maximum Ratings (TA=25℃)
Parameter
Symbol
V
DS
V
GS
I
D (DC)
I
D (DC)
I
DM (pluse)
dv/dt
P
D
E
AS
T
J
,T
STG
Value
75
±25
60
48
310
30
140
0.95
300
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/℃
mJ
℃
Drain-Source Voltage (V
GS
=0V）
Gate-Source Voltage (V
DS
=0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed
(Note 1)
Peak diode recovery voltage
Maximum Power Dissipation(Tc=25℃)
Derating factor
Single pulse avalanche energy
(Note 2)
Operating Junction and Storage Temperature Range
Notes
1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition：Tj=25℃,VDD=50V,VG=10V,L=0.5mH
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
NCE7560K
http://www.ncepower.com
Pb-Free Product
Table 2.
Thermal Characteristic
Parameter
Symbol
R
thJC
R
thJA
Value
1.05
50
Unit
℃
/W
℃
/W
Thermal Resistance，Junction-to-Case（Maximum）
Thermal Resistance，Junction-to-Ambient
（Maximum）
Table 3.
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
BV
DSS
I
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
SD
I
SDM
V
SD
t
rr
Q
rr
t
on
Tj=25℃,I
SD
=30A,V
GS
=0V
Tj=25℃,I
F
=75A,di/dt=100A/μs
V
DD
=30V,I
D
=2A,R
L
=15Ω
V
GS
=10V,R
G
=2.5Ω
V
GS
=0V I
D
=250μA
V
DS
=75V,V
GS
=0V
V
DS
=75V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=30A
V
DS
=5V,I
D
=30A
V
DS
=25V,V
GS
=0V,
F=1.0MHz
Min
75
Typ
Max
Unit
V
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching times
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward on voltage
(Note 1)
Reverse Recovery Time
(Note 1)
Reverse Recovery Charge
(Note 1)
Forward Turn-on Time
80
320
1.2
53
105
A
A
V
nS
nC
18.2
15.6
70.5
13.8
nS
nS
nS
nS
60
3100
310
260
100
18
27
S
PF
PF
PF
nC
nC
nC
1
10
±100
2
3
6.8
4
8
μA
μA
nA
V
mΩ
V
DS
=30V,I
D
=30A,
V
GS
=10V
Intrinsic turn-on time is negligible(turn-on is dominated by L
S
+L
D
)
Notes 1.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
1.5%, R
G
=25Ω, Starting Tj=25℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0
NCE7560K
http://www.ncepower.com
Pb-Free Product
Test circuit
1）E
AS
test circuits
2）Gate charge test circuit:
3）Switch Time Test Circuit：
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
v1.0
NCE7560K
http://www.ncepower.com
Pb-Free Product
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. R
DS(ON)
vs Junction Temperature
Wuxi NCE Power Semiconductor Co., Ltd
Page 4
v1.0
NCE7560K
http://www.ncepower.com
Pb-Free Product
Figure7. BV
DSS
vs Junction Temperature
Figure8. V
GS(th)
vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
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