BYD33DGP thru BYD33MGP
New Product
Vishay General Semiconductor
Avalanche Glass Passivated Junction Fast Switching Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
E
RSM
t
rr
I
R
T
j
max.
1.0 A
200 V to 1000 V
30 A
10 mJ, 7 mJ
150 ns, 250 ns, 300 ns
5.0 µA
175 °C
®
ted*
aten
P
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
by Patent No. 3,930,306
DO-204AL (DO-41)
Features
•
•
•
•
•
•
•
•
Cavity-free glass-passivated junction
Avalanche surge capability guaranteed
Fast reverse recovery time
Low switching losses, high efficiency
Low leakage current, typical I
R
less than 0.1 µA
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-204AL, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Typical Applications
For use in high frequency rectification of switching
power supplies, inverters, converters and freewheel
ing applications for consumer, automotive and Tele-
communication
Maximum Ratings
T
A
= 25 °C unless otherwise specified
Parameter
Device Marking Code
Maximum repetitive peak reverse voltage
Maximum DC blocking voltage
V
RRM
V
DC
Symbol BYD33DGP BYD33GGP BYD33JGP BYD33KGP BYD33MGP
33DGP
200
200
33GGP
400
400
33JGP
600
600
1.0
30
10
7
100
- 65 to + 175
33KGP
800
800
33MGP
1000
1000
Unit
V
V
V
A
A
mJ
µA
°C
Maximum average forward rectified current
I
F(AV)
0.375 " (9.5 mm) lead length at T
A
= 55 °C
Peak forward surge current 8.3 ms single half
I
FSM
sine-wave superimposed on rated load
Non-repetitive peak reverse
D-J
E
RSM
avalanche energy
K-M
I
R(AV)
Maximum full load reverse current, full cycle
average 0.375" (9.5 mm) lead length T
A
= 55 °C
Operating junction and storage temperature
T
J
,T
STG
range
Document Number 88914
31-Aug-05
www.vishay.com
1
BYD33DGP thru BYD33MGP
Vishay General Semiconductor
Electrical Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Maximum
instantaneous forward
voltage
Maximum DC reverse
current at rated DC
blocking voltage
Maximum reverse
recovery time
Typical junction
capacitance
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Test condition
at 1.0 A
(1)
Symbol BYD33DGP BYD33GGP BYD33JGP BYD33KGP BYD33MGP
V
F
1.3
Unit
V
T
A
= 25 °C
T
A
= 150 °C
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
at 4.0 V, 1 MHz
I
R
5.0
200
150
250
15
300
µA
t
rr
C
J
ns
pF
Thermal Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Typical thermal resistance
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
(1)
Symbol BYD33DGP BYD33GGP BYD33JGP BYD33KGP BYD33MGP
R
θJA
55
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise specified)
1.0
30
Resistive or Inductive Load
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
Average Forward Rectified Current (A)
0.75
Forward Surge Current (A)
0.375" (9.5mm) Lead Length
50
75
100
125
150
175
20
0.5
10
0.25
0
25
0
1
10
100
Ambient Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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2
Document Number 88914
31-Aug-05
BYD33DGP thru BYD33MGP
Vishay General Semiconductor
10
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50mVp-p
Instantaneous Forward Current (A)
1
Junction Capacitance (pF)
1.6
0.1
T
J
= 25 °C
Pulse
Width
= 300
µs
1% Duty Cycle
10
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
20
10
T
J
= 125 °C
1
100
Transient Thermal Impedance (°CW)
Instantaneous Reverse Current (µA)
10
T
J
= 75 °C
0.1
1
T
J
= 25 °C
0.01
0
20
40
60
80
100
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t, Pulse Duration (sec.)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Document Number 88914
31-Aug-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
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