19-3886; Rev 1; 8/06
KIT
ATION
EVALU
E
BL
AVAILA
VRD11/VRD10, K8 Rev F 2/3/4-Phase PWM
Controllers with Integrated Dual MOSFET Drivers
General Description
The MAX8809A/MAX8810A synchronous, 2-/3-/4-
phase, step-down, current-mode controllers with inte-
grated dual-phase MOSFET drivers provide flexible
solutions that fully comply with Intel
®
VRD11/VRD10
and AMD K8 Rev F CPU core supplies. The flexible
design supplies load currents up to 150A for low-volt-
age CPU core power requirements.
A tri-state SEL input is available to configure the VID
logic for either the Intel VRD11/VRD10 or AMD K8 Rev F
applications. An enable input (EN) is available to dis-
able the IC. True-differential remote output-voltage
sensing enables precise regulation at the load by elimi-
nating the effects of trace impedance in the output and
return paths. A high-accuracy DAC combined with pre-
cision current-sense amplifiers and droop control
enable the MAX8809A/MAX8810A to meet the most
stringent tolerance requirements of new-generation
high-current CPUs. These ICs use either integral or volt-
age-positioning feedback control to achieve high out-
put-voltage accuracy.
The COMP input allows for either positive or negative
voltage offsets from the VID code voltage. A power-
good signal (VRREADY) is provided for startup
sequencing and fault annunciation. The SS/OVP pin
enables the programming of the soft-start period, and
provides an indication of an overvoltage condition. A
soft-stop feature prevents negative voltage spikes on
the output at turn-off, eliminating the need for an exter-
nal Schottky clamp diode.
The MAX8809A/MAX8810A incorporate a proprietary
“rapid active average” current-mode control scheme for
fast and accurate transient-response performance, as
well as precise load current sharing. Either the inductor
DCR or a resistive current-sensing element is used for
current sensing. When used with DCR sensing, rapid
active current averaging (RA
2
) eliminates the tolerance
effects of the inductance and associated current-sens-
ing components, providing superior phase current
matching, accurate current limit, and precise load-line.
The MAX8809A operates as a single-chip, 2-phase
solution with integrated drivers. It also provides a 3rd-
phase PWM output and easily supports 3-phase design
by adding the MAX8552 high-performance driver. The
MAX8810A enables up to 4-phase designs by adding
the MAX8523 high-performance dual driver for a com-
pact 2-chip solution.
Features
♦
VRD11/VRD10 and K8 Rev F Compliant
♦
±0.35% Initial Output Voltage Accuracy
♦
Dual Integrated Drivers with Integrated Bootstrap
Diodes
♦
Up to 26V Input Voltage
♦
Adaptive Shoot-Through Protection
♦
Soft-Start, Soft-Stop, VRREADY Output
♦
Fast Load Transient Response
♦
Individual Phase, Fully Temperature-
Compensated Cycle-by-Cycle Average Current
Limit
♦
Current Foldback at Short Circuit
♦
Voltage Positioning or Integral Feedback
♦
Differential Remote Voltage Sensing
♦
Programmable Positive and Negative Offset
Voltages
♦
150kHz to 1.2MHz Switching Frequency per Phase
♦
NTC-Based, Temperature-Independent Load Line
♦
Precise Phase Current Sharing
♦
Programmable Thermal-Monitoring Output
(VRHOT)
♦
6A Peak MOSFET Drivers
♦
0.3Ω/0.85Ω Low-Side, 0.8Ω/1.1Ω High-Side
Drivers (typ)
♦
40-Pin and 48-Pin Thin QFN Packages
MAX8809A/MAX8810A
Applications
Desktop PCs
Servers, Workstations
Desknote and LCD PCs
Voltage-Regulator Modules
Ordering Information
PART
MAX8809AETL+
MAX8810AETM+
PIN-
PACKAGE
40 Thin QFN
5mm x 5mm
48 Thin QFN
6mm x 6mm
PKG
CODE
T4055-1
T4866-1
FUNCTION
2-/3-phase
2-/3-/4-phase
Intel is a registered trademark of Intel Corp.
+Denotes
lead-free package.
Note:
All parts are specified in the -40°C to +85°C extended
temperature range.
Pin Configurations appear at end of data sheet.
________________________________________________________________
Maxim Integrated Products
1
For pricing delivery, and ordering information please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
VRD11/VRD10, K8 Rev F 2/3/4-Phase PWM
Controllers with Integrated Dual MOSFET Drivers
MAX8809A/MAX8810A
ABSOLUTE MAXIMUM RATINGS
REF, COMP, SS/OVP, OSC, NTC, VRTSET,
RS+, RS-, PWM_ to GND.......................-0.3V to (V
CC
+ 0.3V)
CS_+, CS_-, VID_, BUF, EN, ILIM, SEL, VRREADY,
VRHOT, V
CC
to GND ............................................-0.3V to +6V
BST_ to PGND_ ......................................................-0.3V to +35V
LX_ to PGND_............................................................-1V to +28V
BST_ to VL_ ...............................................................-1V to +30V
DH_ to PGND_ .........................................-0.3V to (V
BST_
+ 0.3V)
DH_, BST_ to LX_ .....................................................-0.3V to +7V
VL_ to PGND_ ..........................................................-0.3V to +7V
DL_ to PGND_ ..........................................-0.3V to (V
VL_
+ 0.3V)
PGND_ to GND......................................................-0.3V to +0.3V
CS_+ to CS_-.........................................................-0.3V to +0.3V
DH_, DL_ Current ....................................................±200mA
RMS
VL_ to BST_ Diode Current...........................................50mA
RMS
Continuous Power Dissipation (T
A
= +70°C)
40-Pin Thin QFN 5mm x 5mm
(derate 35.7mW/°C above +70°C) ..........................2857.1mW
48-Pin Thin QFN 6mm x 6mm
(derate 37mW/°C above +70°C) ................................2963mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
VL_
= V
BST_
= 6.5V, V
CC
= V
EN
= 5V, V
ILIM
= 1.5V, VID_ = SEL = REF = BUF = unconnected, V
COMP
= V
RS+
= 1.0V, R
VRREADY
=
5kΩ pullup to 5V, R
SS/OVP
= 12kΩ to GND, R
NTC
= 10kΩ to GND, f
SW
= 300kHz, R
VRTSET
= 118kΩ to GND, V
CS_+
= V
CS_-
= 1V,
PWM_ = unconnected, R
VRHOT
= 249Ω pullup to 1.05V, V
GND
= V
PGND_
= V
LX_
= V
RS-
= 0V, DL_ = DH_ = unconnected,
T
A
= 0°C
to +85°C.
Typical values are at T
A
= +25°C, unless otherwise noted.)
PARAMETER
V
CC
Operating Range
V
CC
UVLO Trip Level
V
CC
Shutdown Supply Current
V
CC
Standby Supply Current
V
CC
Operating Supply Current
Thermal Shutdown
INTERNAL REFERENCE (REF)
Output Voltage
Output Regulation (Sourcing)
Output Regulation (Sinking)
Reference UVLO Trip Level
BUF REFERENCE
BUF Regulation Voltage
BUF Output Regulation
SOFT-START
EN Startup Delay (TD1)
Soft-Start Period Range (TD2)
Soft-Start Tolerance
Intel Boot-Level Duration (TD3)
From EN rising to V
OUT
rising
12kΩ < R
SS/OVP
< 90.9kΩ
R
SS/OVP
= 56kΩ
SEL = GND or SEL = V
CC
1.6
0.5
2.25
175
3.00
250
2.2
2.8
6.5
3.75
350
ms
ms
ms
µs
I
BUF
= 0A
V
CC
= 4.5V at I
BUF
= +100µA to V
CC
= 5.5V at
I
BUF
= +500µA
0.99
-0.25
1.0
1.01
+0.25
V
%
I
REF
= -100µA
V
CC
= 4.5V at I
REF
= -500µA to V
CC
= 5.5V at
I
REF
= -100µA
V
CC
= 4.5V at I
REF
= +100µA to V
CC
= 5.5V at
I
REF
= +500µA
Rising (100mV typ hysteresis)
1.992
-0.05
-0.2
1.84
2.000
2.008
+0.05
+0.2
V
%
%
V
Rising
Falling
V
CC
< 3.75V
V
EN
= 0V
V
RS+
- V
RS-
= 1.0V, no switching, V
DAC
= 1.0V (Note 1)
Temperature rising, hysteresis = 25°C (typ)
CONDITIONS
MIN
4.5
4.0
3.7
4.25
4.0
0.35
0.5
13
+160
TYP
MAX
5.5
4.5
4.3
UNITS
V
V
mA
mA
mA
°C
2
_______________________________________________________________________________________
VRD11/VRD10, K8 Rev F 2/3/4-Phase PWM
Controllers with Integrated Dual MOSFET Drivers
ELECTRICAL CHARACTERISTICS (continued)
(V
VL_
= V
BST_
= 6.5V, V
CC
= V
EN
= 5V, V
ILIM
= 1.5V, VID_ = SEL = REF = BUF = unconnected, V
COMP
= V
RS+
= 1.0V, R
VRREADY
=
5kΩ pullup to 5V, R
SS/OVP
= 12kΩ to GND, R
NTC
= 10kΩ to GND, f
SW
= 300kHz, R
VRTSET
= 118kΩ to GND, V
CS_+
= V
CS_-
= 1V,
PWM_ = unconnected, R
VRHOT
= 249Ω pullup to 1.05V, V
GND
= V
PGND_
= V
LX_
= V
RS-
= 0V, DL_ = DH_ = unconnected,
T
A
= 0°C
to +85°C.
Typical values are at T
A
= +25°C, unless otherwise noted.)
PARAMETER
VOLTAGE REGULATION
RS+ Input Bias Current
RS- Input Bias Current
Output Voltage Initial Accuracy
Droop Accuracy
g
MV
Amplifier Transconductance
g
MV
Gain Bandwidth Product
Comp Output Current
CURRENT LIMIT
Average Current-Limit Trip Level
Accuracy
ILIM Input Bias Current
ILIM Default Program Level
ENABLE INPUT (EN)
Turn-On Threshold (Rising)
LOGIC INPUTS (VID0–VID7)
INTEL (SEL = HIGH OR LOW)
Input Low Level
Input High Level
Input Pulldown Resistance
AMD (SEL = UNCONNECTED)
Input Low Level
Input High Level
Input Pulldown Resistance
LOGIC INPUT (SEL)
Internal Bias Resistance
Internal Bias Voltage
Input Low Level
Input High Level
VRREADY OUTPUT
Output Low Level
Output High Leakage
VRREADY Blanking Time
I
VRREADY
= +4mA
V
VRREADY
= 5.5V
From EN rising to VRREADY rising, R
SS/OVP
= 12kΩ
3.0
0.4
1
5.5
V
µA
ms
V
CC
= 4.5V to 5.5V
V
CC
= 4.5V to 5.5V
V
CC
= 4.5V to 5.5V
V
CC
-
0.5
50
100
V
CC
/ 2
0.5
200
kΩ
V
V
V
V
CC
= 4.5V to 5.5V
V
CC
= 4.5V to 5.5V
1.4
100
270
0.6
V
V
kΩ
V
CC
= 4.5V to 5.5V
V
CC
= 4.5V to 5.5V
0.8
100
270
0.4
V
V
kΩ
V
CC
= 4.5V to 5.5V, 100mV typ hysteresis
0.8
0.85
0.9
V
V
ILIM
> V
CC
- 0.2V
1.197
V
ILIM
= 1.5V
-6
0.01
1.330
+6
1
1.463
%
µA
V
V
DAC
- V
RS+
= 200mV (Note 1)
V
RS+
= 1V
V
RS-
= 0.2V
V
DAC
= 1V (Note 1)
V
DAC
= 1V (Note 1),
R
NTC
= 10kΩ
T
A
= +25°C to +85°C
T
A
= -5°C to +85°C
-0.35
-3.5
-5.5
1.94
2.00
5
385
0.1
0.1
1
1
+0.35
+3.5
+5.5
2.06
µA
µA
%
%
mS
MHz
µA
CONDITIONS
MIN
TYP
MAX
UNITS
MAX8809A/MAX8810A
_______________________________________________________________________________________
3
VRD11/VRD10, K8 Rev F 2/3/4-Phase PWM
Controllers with Integrated Dual MOSFET Drivers
MAX8809A/MAX8810A
ELECTRICAL CHARACTERISTICS (continued)
(V
VL_
= V
BST_
= 6.5V, V
CC
= V
EN
= 5V, V
ILIM
= 1.5V, VID_ = SEL = REF = BUF = unconnected, V
COMP
= V
RS+
= 1.0V, R
VRREADY
=
5kΩ pullup to 5V, R
SS/OVP
= 12kΩ to GND, R
NTC
= 10kΩ to GND, f
SW
= 300kHz, R
VRTSET
= 118kΩ to GND, V
CS_+
= V
CS_-
= 1V,
PWM_ = unconnected, R
VRHOT
= 249Ω pullup to 1.05V, V
GND
= V
PGND_
= V
LX_
= V
RS-
= 0V, DL_ = DH_ = unconnected,
T
A
= 0°C
to +85°C.
Typical values are at T
A
= +25°C, unless otherwise noted.)
PARAMETER
VRREADY Upper Threshold
(Note 1)
CONDITIONS
(V
RS+
- V
RS-)
rising
(V
RS+
- V
RS-)
falling
(V
RS+
- V
RS-)
falling
(V
RS+
- V
RS-)
rising
OVERVOLTAGE PROTECTION
Intel (SEL = High or Low)
AMD (SEL = Unconnected)
SS/OVP High Level
OSCILLATOR
Oscillator Frequency Accuracy
(per Phase)
Switching Frequency Range
(per Phase)
CURRENT-SENSE AMPLIFIERS
Current-Sense Amplifier Gain (G
CA
)
CS_+ Input Bias Current
CS_- Input Bias Current
CS to PWM_ Delay
R
NTC
= 10kΩ, T
A
= +25°C to +85°C
V
CS_+
= V
CS
_- = 2V
V
CS_+
= V
CS
_- = 2V
V
COMP
falling
R
NTC
temperature = 0°C to +125°C
(10k NTC Panasonic ERTJ1VR103)
I
VRHOT
= +4mA
V
VRHOT
= 5.5V
+60
R
NTC
temperature = +60°C to +125°C, 15°C
hysteresis (typ) (10k NTC Panasonic ERTJ1VR103)
-5
28.8
30.0
0.3
0.6
20
31.2
3.0
5.5
V/V
µA
µA
ns
Frequency per phase = 300kHz
-10
150
+10
1200
%
kHz
(V
RS+
- V
RS-)
rising (Note 1)
(V
RS+
- V
RS-)
rising
I
SS/OVP
= -10mA
V
DAC
+
0.150
1.750
V
CC
-
0.450
V
DAC
+ V
DAC
+
0.175
0.200
1.775
1.800
V
V
V
MIN
V
DAC
+
0.150
V
DAC
+
0.075
V
DAC
-
0.250
V
DAC
-
0.175
TYP
MAX
V
DAC
+
0.200
V
V
DAC
+
0.125
V
DAC
-
0.200
V
V
DAC
-
0.125
UNITS
VRREADY Lower Threshold
(Note 1)
GAIN TEMPERATURE COMPENSATION (NTC)
Compensation Accuracy
VRHOT TEMPERATURE MONITORING
VRHOT Output Low Voltage
VRHOT Output High Leakage Current
VRTSET Temperature Range
VRTSET Accuracy
0.4
5
+125
+5
V
µA
°C
°C
-6
+6
%
4
_______________________________________________________________________________________
VRD11/VRD10, K8 Rev F 2/3/4-Phase PWM
Controllers with Integrated Dual MOSFET Drivers
ELECTRICAL CHARACTERISTICS (continued)
(V
VL_
= V
BST_
= 6.5V, V
CC
= V
EN
= 5V, V
ILIM
= 1.5V, VID_ = SEL = REF = BUF = unconnected, V
COMP
= V
RS+
= 1.0V, R
VRREADY
=
5kΩ pullup to 5V, R
SS/OVP
= 12kΩ to GND, R
NTC
= 10kΩ to GND, f
SW
= 300kHz, R
VRTSET
= 118kΩ to GND, V
CS_+
= V
CS_-
= 1V,
PWM_ = unconnected, R
VRHOT
= 249Ω pullup to 1.05V, V
GND
= V
PGND_
= V
LX_
= V
RS-
= 0V, DL_ = DH_ = unconnected,
T
A
= 0°C
to +85°C.
Typical values are at T
A
= +25°C, unless otherwise noted.)
PARAMETER
PWM DRIVER
Output Low Level
Output High Level
Source Current
Sink Current
Rise/Fall Times
PWM Disable Program Threshold
GATE-DRIVER SPECIFICATIONS
VL_, BST_ to LX_ Input Voltage Range
LX Operating Range
VL_ UVLO Threshold (VL12,
MAX8809A; VL1, MAX8810A)
Driver Static Supply Current, I
VL_
(per Channel)
Boost Static Supply Current, I
BST_
(per Channel)
DH Driver Resistance
DL Driver Resistance
DH_ Rise Time (t
rDH
)
DH_ Fall Time (t
fDH
)
DL_ Rise Time (t
rDL
)
DL_ Fall Time (t
fDL
)
DH_ Propagation Delay (t
pDHf
)
Dead Time (t
pDLr
)
Dead Time (t
DEAD
)
On-Resistance
V
VL_
rising, 250mV hysteresis (typ)
DH_ = BST_
DH_ = LX_
DH_ = BST_
Sourcing current, V
VL
_ = 6.5V
Sinking current, V
VL
_ = 6.5V
Sourcing current, V
VL
_ = 6.5V
Sinking current, V
VL
_ = 6.5V
C
DH_
= 3000pF
C
DH_
= 3000pF
C
DL_
= 3000pF
C
DL_
= 3000pF
CS+ rising to DH falling
LX_ falling to DL_ rising
DL_ falling to DH_ rising
I
BST_
= 2mA
3.25
3.55
1
1.1
0.6
1.1
0.8
0.85
0.3
14
9
10
7
32
18
35
6
4.5
6.5
26
3.80
1.6
1.8
1
2.0
1.2
1.7
0.6
V
V
V
mA
mA
Ω
Ω
ns
ns
ns
ns
ns
ns
ns
Ω
4V < V
CC
< 5.5V
3.0
I
PWM_
= +5mA
I
PWM_
= -5mA
V
PWM_
= V
CC
- 2V
V
PWM_
= 2V
4.5
0.1
4.9
52
65
10
V
CC
-
0.7
0.4
V
V
mA
mA
ns
V
CONDITIONS
MIN
TYP
MAX
UNITS
MAX8809A/MAX8810A
INTERNAL BOOST-DIODE SPECIFICATIONS
_______________________________________________________________________________________
5
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