Si9435BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
8
7
6
5
D
D
D
D
D
P-Channel MOSFET
G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
Steady State
−30
"20
Unit
V
−5.7
−4.6
−30
−2.3
2.5
1.6
−55
to 150
−4.1
−3.2
A
−1.1
1.3
0.8
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
40
70
24
Maximum
50
95
30
Unit
_C/W
C/W
Document Number: 72245
S-50153—Rev. C, 31-Jan-05
www.vishay.com
1
Si9435BDY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
GS(th)
I
GSS
I
DSS
I
D( )
D(on)
V
DS
= V
GS
, I
D
=
−250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
=
−30
V, V
GS
= 0 V
V
DS
=
−30
V, V
GS
= 0 V, T
J
= 70_C
V
DS
v
−10
V, V
GS
=
−10
V
V
DS
v
−5
V, V
GS
=
−4.5
V
V
GS
=
−10
V, I
D
=
−5.7
A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
=
−6
V, I
D
=
−5
A
V
GS
=
−4.5
V, I
D
=
−4.4
A
Forward Transconductance
b
Diode Forward Voltage
b
g
fs
V
SD
V
DS
=
−15
V, I
D
=
−5.7
A
I
S
=
−2.3
A, V
GS
= 0 V
−20
−5
0.033
0.043
0.056
13
−0.8
−1.1
0.042
0.055
0.070
S
V
W
−1.0
−3.0
"100
−1
−5
V
nA
mA
Symbol
Test Condition
Min
Typ
a
Max
Unit
On-State
On State Drain Current
b
A
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
=
−1.2
A, di/dt = 100 A/ms
V
DD
=
−15
V, R
L
= 15
W
15
I
D
^
−1
A, V
GEN
=
−10
V, R
g
= 6
W
V
DS
=
−15
V, V
GS
=
−10
V, I
D
=
−3.5
A
16
2.3
4.5
8.8
14
14
42
30
30
25
25
70
50
60
ns
W
24
nC
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
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