Rev.1.0
_00
P-CHANNEL POWER MOS FET FOR SWITCHING
S-90P0112SMA
The
S-90P0112SMA
is an P-channel power MOS
FET that realizes a low on-state resistance and ultra
high-speed switching characteristics. It is suitable for
speeding up switching, enabling a high efficient set
and energy saving. A gate protection diode is built in
as a countermeasure for static electricity. Small
SOT-23-3 package realize high-density mounting.
This product can be driven directly by a
−2.5
V
power source. If use this product in combination with
SII switching regulator products, you can get the
highest performance.
Features
•
Low on-state resistance:
•
Ultra high-speed switching
•
Operational voltage:
•
Built-in gate protection diode
•
Small package:
R
DS(on)1
= 0.27
Ω
Max. (V
GS
=
−4.5
V, I
D
=
−0.4
A)
R
DS(on)2
= 0.45
Ω
Max. (V
GS
=
−2.5
V, I
D
=
−0.4
A)
−2.5
V drive available
SOT-23-3
Applications
•
Notebook PCs
•
Cellular and portable phones
•
On-board power supplies
Packages
•
SOT-23-3
(Package drawing code: MP003-A)
Item code
•
Item code
•
Delivery form
: S-90P0112SMA-TF
: Taping only
Seiko Instruments Inc.
1
P-CHANNEL POWER MOS FET FOR SWITCHING
S-90P0112SMA
Pin Configuration
SOT-23-3
Top view
3
Table
Pin No.
1
2
3
Symbol
G
S
D
1
Description
Gate pin
Source pin
Drain pin
Rev.1.0
_00
1
Figure
1
2
Equivalent Circuit
D (Drain)
G (Gate)
Gate
Protection
Diode
Body
Diode
S (Source)
Caution The diode connected between the gate and source of the
transistor serves as a protector against electrostatic
discharge. Do not apply an electrostatic discharge to this
IC that exceeds the performance ratings of the built-in
gate protection diode.
And when this device actually used, an additional
protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this
device.
Figure
2
Absolute Maximum Ratings
Table
Item
Drain to source voltage
(When between gate and source short circuits)
Gate to source voltage
(When between drain and source short circuits)
Drain current (DC)
Drain current (Pulse)
Reverse drain current
*1, *2
Power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
DP
I
DR
P
D
T
ch
T
stg
2
(Ta = 25°C unless otherwise specified)
Conditions
Ratings
Unit
V
GS
= 0 V
V
DS
= 0 V
PW = 10
µs,
Duty Cycle≤1%
−20
±12
−0.7
−2.8
−0.7
1.1
150
−55
to
+150
A
V
W
°C
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
*1.
Mounted on a ceramics board (1225 mm
×
1 mm)
*2.
The allowable power dissipation differs depending on the mounting form.
2
2
Seiko Instruments Inc.
Rev.1.0
_00
Electrical Characteristics
DC characteristics
P-CHANNEL POWER MOS FET FOR SWITCHING
S-90P0112SMA
Table
Item
Symbol
3
Drain cut-off current
Gate to source leakage current
Gate to source cut-off voltage
*1
Drain to source on-state resistance
Forward transfer admittance
Body drain diode forward voltage
*1.
Effective during pulse test (600
µs).
Dynamic characteristics
*1
I
DSS
I
GSS
V
GS(off)
R
DS(on)1
R
DS(on)2
|Y
fs
|
V
f
(Ta = 25°C unless otherwise specified)
Min.
Typ.
Max.
Conditions
Unit
V
DS
=
−20
V, V
GS
= 0 V
−10
µA
V
GS
= ±12 V, V
DS
= 0 V
±10
V
I
D
=
−1
mA, V
DS
=
−10
V
−0.5
−1.2
0.20
0.27
I
D
=
−0.4
A, V
GS
=
−4.5
V
Ω
0.32
0.45
I
D
=
−0.4
A, V
GS
=
−2.5
V
S
1.5
I
D
=
−0.4
A, V
DS
=
−10
V
V
I
f
=
−0.7
A, V
GS
= 0 V
−0.8
−1.1
Table
Item
Symbol
4
Input capacitance
Output capacitance
Feedback capacitance
C
iss
C
oss
C
rss
(Ta = 25°C unless otherwise specified)
Min.
Typ.
Max.
Conditions
Unit
200
pF
V
DS
=
−10
V, V
GS
= 0 V,
70
f = 1 MHz
60
Seiko Instruments Inc.
3
P-CHANNEL POWER MOS FET FOR SWITCHING
S-90P0112SMA
Switching characteristics
Table
Item
Symbol
Rev.1.0
_00
5
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t
d(on)
t
r
t
d(off)
t
f
(Ta = 25°C unless otherwise specified)
Min.
Typ.
Max.
Conditions
Unit
10
ns
V
GS
=
−5
V, I
D
=
−0.4A,
40
V
DD
=
−10
V
85
80
D.U.T.
R
L
0
V
GS
Wave Form
10 %
V
GS
90 %
PG.
V
DD
0
τ
V
DS
Wave Form
V
DS
90 %
t
d(on)
τ
= 10
µs
Duty Cycle
≤
1 %
t
r
t
d(off)
90 %
t
f
10 %
10 %
0
V
GS
Figure
Thermal characteristics
Table
Item
Symbol
3
6
(Ta = 25°C unless otherwise specified)
Min.
Typ.
Max.
Unit
107
°C/W
Thermal resistance
(Channel to ambience)
R
th(ch-a)
Conditions
Mounted on a ceramics board
2
(1225 mm
×
1 mm)
Precautions
•
The application conditions for the input voltage, output voltage, and load current should not exceed the
allowable power dissipation after mounting.
•
SII claims no responsibility for any disputes arising out of or in connection with any infringement by
products including this IC of patents owned by a third party.
4
Seiko Instruments Inc.
Rev.1.0
_00
Typical Characteristics
P-CHANNEL POWER MOS FET FOR SWITCHING
S-90P0112SMA
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
Pulse test (600
µs),
Ta = 25°C
–3.0
–2.5
–2.0
–1.5
–1.0
–0.5
0
–5.0 V
–4.5 V
–4.0 V
–3.5 V
–3.0 V
V
GS
= –2.5 V
DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE
Pulse test (600
µs),
V
DS
=
−10
V
–3.0
–2.5
25 °C
Drain Current I
D
[A]
Drain Current I
D
[A]
–2.0 V
–2.0
–55 °C
–1.5
–1.0
–0.5
0
125 °C
–1.5 V
0
–0.5
–1.0
–1.5
–2.0
–2.5
–3.0
0
–0.5
–1.0
–1.5
–2.0
–2.5
–3.0
Drain to Source Voltage V
DS
[V]
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
Pulse test (600
µs),
Ta = 25°C
Drain to Source On-State Resistance
R
DS(on)
[Ω]
0.45
0.40
0.35
0.30
0.25 I
D
= –0.4 A
0.20
0.15
0.10
0.05
0
0
–2
–4
–6
–8
–10
–0.7 A
Gate to Source Voltage V
GS
[V]
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
Pulse test (600
µs),
Ta = 25°C
Drain to Source On-State Resistance
R
DS(on)
[Ω]
1
0.50
V
GS
= –2.5 V
–4.5 V
0.1
0
–1
–2
–3
Gate to Source Voltage V
GS
[V]
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
Pulse test (600
µs)
Drain to Source On-State Resistance
R
DS(on)
[Ω]
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
–50 –25
0
25
50
75
100 125 150
V
GS
= –4.5 V
I
D
= –0.4 A, –0.7 A
V
GS
= –2.5 V
I
D
= –0.7 A
I
D
= –0.4 A
Drain Current I
D
[A]
GATE TO SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
V
DS
=
−10
V, I
D
=
−1
mA
Gate to Source Cut-off Voltage
Variance
V
GS(off)
Variance [V]
0.4
0.3
0.2
0.1
0
–0.1
–0.2
–0.3
–0.4
–50
0
50
100
150
Ambient Temperature Ta [°C]
Ambient Temperature Ta [°C]
Seiko Instruments Inc.
5
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